IP Library Granted Patent US 9,449,549
Granted Patent B2
US 9,449,549 · App. 14/797,246 · Granted Sep 20, 2016

Semiconductor device and driving method thereof

Inventor: Hajime Kimura (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
G09G3/3225G09G3/3233H01L27/124H01L27/1255H01L27/3262H01L27/3265G09G3/3266G09G3/3275G09G2300/0814G09G2300/0819G09G2300/0842G09G2300/0852G09G2300/0861G09G2300/0876G09G2310/027G09G2310/0251G09G2320/0204G09G2320/0252G09G2320/043G09G2320/045G09G2380/02H01L27/3244H01L27/3295H01L51/5237
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,449,549
App. No.
14/797,246
Granted
Sep 20, 2016
Kind
B2
Abstract

A voltage equal to the threshold value of a TFT ( 106 ) is held in capacitor unit ( 109 ). When a video signal is inputted from a source signal line, the voltage held in the capacitor unit is added thereto and a resultant signal is applied to a gate electrode of the TFT ( 106 ). Even when a threshold value is varied for each pixel, each threshold value is held in the capacitor unit ( 109 ) for each pixel. Thus, the influence of a variation in threshold value can be eliminated. Further, holding of the threshold value is conducted by only the capacitor unit ( 109 ) and a charge does not move at writing of a video signal so that a voltage between both electrodes is not changed. Thus, it is not influenced by a variation in capacitance value.

Claims (88)

1. A semiconductor device comprising:

a pixel comprising:

a first transistor;

a second transistor;

a third transistor;

a fourth transistor;

a fifth transistor;

a sixth transistor; and

a first capacitor,

wherein a gate of the first transistor is electrically connected to a first electrode of the first capacitor,

wherein one of a source and a drain of the second transistor is electrically connected to the gate of the first transistor,

wherein the other of the source and the drain of the second transistor is electrically connected to one of a source and a drain of the first transistor,

wherein one of a source and a drain of the third transistor is electrically connected to a second electrode of the first capacitor,

wherein one of a source and a drain of the fourth transistor is electrically connected to a pixel electrode of a light-emitting element,

wherein the other of the source and the drain of the fourth transistor is electrically connected to the one of the source and the drain of the first transistor,

wherein one of a source and a drain of the fifth transistor is electrically connected to the second electrode of the first capacitor, and

wherein one of a source and a drain of the sixth transistor is electrically connected to the first electrode of the first capacitor.

2. The semiconductor device according to claim 1 , wherein the other of the source and the drain of the fifth transistor is electrically connected to the other of the source and the drain of the sixth transistor.

3. The semiconductor device according to claim 1 ,

wherein a gate of the third transistor is electrically connected to a first gate signal line, and

wherein a gate of the second transistor is electrically connected to a second gate signal line.

4. The semiconductor device according to claim 3 , wherein a gate of the fourth transistor is electrically connected to a third gate signal line.

5. The semiconductor device according to claim 1 , further comprising a second capacitor electrically connected to the second electrode of the first capacitor.

6. The semiconductor device according to claim 1 , further comprising:

a flexible print circuit; and

a driver circuit,

wherein the driver circuit is configured to select a gate signal line electrically connected to a gate of the third transistor, and

wherein the flexible print circuit is operatively connected to the driver circuit.

7. The semiconductor device according to claim 1 , wherein a gate of the sixth transistor is electically connected to the first electrode of the first capacitor.

8. A portable information terminal comprising:

an antenna; and

a display portion comprising a pixel, the pixel comprising:

a first transistor;

a second transistor;

a third transistor;

a fourth transistor;

a fifth transistor;

a sixth transistor; and

a first capacitor,

wherein a gate of the first transistor is electrically connected to a first electrode of the first capacitor,

wherein one of a source and a drain of the second transistor is electrically connected to the gate of the first transistor,

wherein the other of the source and the drain of the second transistor is electrically connected to one of a source and a drain of the first transistor,

wherein one of a source and a drain of the third transistor is electrically connected to a second electrode of the first capacitor,

wherein one of a source and a drain of the fourth transistor is electrically connected to a pixel electrode of a light-emitting element,

wherein the other of the source and the drain of the fourth transistor is electrically connected to the one of the source and the drain of the first transistor,

wherein one of a source and a drain of the fifth transistor is electrically connected to the second electrode of the first capacitor, and

wherein one of a source and a drain of the sixth transistor is electrically connected to the first electrode of the first capacitor.

9. The portable information terminal according to claim 8 , wherein the other of the source and the drain of the fifth transistor is electrically connected to the other of the source and the drain of the sixth transistor.

10. The portable information terminal according to claim 8 ,

wherein a gate of the third transistor is electrically y connected to a first gate signal line, and

wherein a gate of the second transistor is electrically connected to a second gate signal line.

11. The portable information terminal according to claim 10 , wherein a gate of the fourth transistor is electrically connected to a third gate signal line.

12. The portable information terminal according to claim 8 , further comprising a second capacitor electrically connected to the second electrode of the first capacitor.

13. The portable information terminal according to claim 8 , further comprising:

a flexible print circuit; and

a driver circuit,

wherein the driver circuit is configured to select a gate signal line electrically connected to a gate of the third transistor, and

wherein the flexible print circuit is operatively connected to the driver circuit.

14. The portable information terminal according to claim 8 , wherein a gate of the sixth transistor is electrically connected to the first electrode of the first capacitor.

15. A semiconductor device comprising:

a pixel comprising:

a first transistor;

a second transistor;

a third transistor;

a fourth transistor;

a fifth transistor;

a sixth transistor; and

a first capacitor,

wherein a gate of the first transistor is directly connected to a first electrode of the first capacitor,

wherein one of a source and a drain of the second transistor is directly connected to the gate of the first transistor,

wherein the other of the source and the drain of the second transistor is directly connected to one of a source and a drain of the first transistor,

wherein one of a source and a drain of the third transistor is directly connected to a second electrode of the first capacitor,

wherein one of a source and a drain of the fourth transistor is directly connected to a pixel electrode of a light-emitting element,

wherein the other of the source and the drain of the fourth transistor is directly connected to the one of the source and the drain of the first transistor,

wherein one of a source and a drain of the fifth transistor is directly connected to the second electrode of the first capacitor, and

wherein one of a source and a drain of the sixth transistor is directly connected to the first electrode of the first capacitor.

16. The semiconductor device according to claim 15 , wherein the other of the source and the drain of the fifth transistor is electrically connected to the other of the source and the drain of the sixth transistor.

17. The semiconductor device according to claim 15 ,

wherein a gate of the third transistor is electrically connected to a first gate signal line, and

wherein a gate of the second transistor is electrically connected to a second gate signal line.

18. The semiconductor device according to claim 17 , wherein a gate of the fourth transistor is electrically connected to a third gate signal line.

19. The semiconductor device according to claim 15 , further comprising a second capacitor electrically connected to the second electrode of the first capacitor.

20. The semiconductor device according to claim 15 , further comprising:

a flexible print circuit; and

a driver circuit,

wherein the driver circuit is configured to select a gate signal line electrically connected to a gate of the third transistor, and

wherein the flexible print circuit is operatively connected to the driver circuit.

21. The semiconductor device according to claim 15 , wherein a gate of the sixth transistor is electrically connected to the first electrode of the first capacitor.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 11, 2015
From: KIMURA, HAJIME
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 036296/0304 →
Priority Claims (1)
JP 2001-326397 · Oct 24, 2001 · national
Continuity (7)
Continuation 14527921 · Oct 30, 2014
Continuation 14184757 · Feb 20, 2014
Continuation 13767038 · Feb 14, 2013
Continuation 13267261 · Oct 6, 2011
Continuation 12110379 · Apr 28, 2008
Continuation 10279000 · Oct 24, 2002
Related Publication 20160012771A1 · Jan 14, 2016