Composite substrate manufacturing method, semiconductor element manufacturing method, composite substrate, and semiconductor element
Provided is a composite substrate manufacturing method, including at least: a first raw board deforming step of preparing a first substrate by deforming a first raw board having at least one surface as a minor surface into a state in which the minor surface warps outward; and a joining step of joining, after the first raw board deforming step, a protruding surface of the first substrate and one surface of a second substrate to each other, thereby manufacturing a composite substrate including the first substrate and the second substrate, in which the second substrate is any one substrate selected from a substrate having both surfaces as substantially flat surfaces and a substrate that warps so that a surface thereof to be joined to the first substrate warps outward. Also provided are a semiconductor element manufacturing method, a composite substrate and a semiconductor element manufactured.
1. A composite substrate, comprising:
a first substrate; and
a second substrate,
one surface of the first substrate and one surface of the second substrate being joined to each other,
the one surface of the first substrate being a mirror surface,
wherein a heat denatured layer is formed in at least one region selected from a region on a side of the surface joined to the second substrate of two regions formed by dividing the first substrate into two in a thickness direction, and a region on a side of the surface joined to the first substrate of two regions formed by dividing the second substrate into two in a thickness direction, and
wherein a maximum length of the heat-denatured layer in the direction that is parallel to the surface of the first substrate is larger than a maximum length of the heat-denatured layer in the thickness direction of the first substrate.
2. A composite substrate according to claim 1 , wherein the one surface of the second substrate is a mirror surface.
3. A semiconductor element, comprising:
a first substrate;
a second substrate; and
a thin film comprising one or more semiconductor layers,
one surface of the first substrate and one surface of the second substrate being joined to each other,
the thin film being formed on at least one surface selected from a surface of the first substrate opposite to a surface to which the second substrate is joined, and a surface of the second substrate opposite to a surface to which the first substrate is joined,
the one surface of the first substrate being a mirror surface,
wherein a heat denatured layer is formed in at least one region selected from a region on a side of the surface joined to the second substrate of two regions formed by dividing the first substrate into two in a thickness direction, and a region on a side of the surface joined to the first substrate of two regions formed by dividing the second substrate into two in a thickness direction, and
wherein a maximum length of the heat-denatured layer in the direction that is parallel to the surface of the first substrate is larger than a maximum length of the heat-denatured layer in the thickness direction of the first substrate.
4. A semiconductor element, comprising:
a first substrate;
a second substrate; and
a thin film comprising one or more semiconductor layers,
one surface of the first substrate and one surface of the second substrate being joined to each other through intermediation of the thin film,
the one surface of the first substrate being a mirror surface,
wherein a heat denatured layer is formed in at least one region selected from a region on a side of the surface joined to the second substrate of two regions formed by dividing the first substrate into two in a thickness direction, and a region on a side of the surface joined to the first substrate of two regions formed by dividing the second substrate into two in a thickness direction, and
wherein a maximum length of the heat-denatured layer in the direction that is parallel to the surface of the first substrate is larger than a maximum length of the heat-denatured layer in the thickness direction of the first substrate.
5. A semiconductor element according to claim 3 , wherein the one surface of the second substrate is a mirror surface.
6. A semiconductor element according to claim 3 , wherein the thin film comprises at least one nitride semiconductor layer.