Charged particle beam writing apparatus and charged particle beam writing method

1. A charged particle beam writing apparatus comprising:

a stage configured to mount a sample placed thereon;

an electron optical column including a charged particle gun and a deflector,

wherein the charged particle gun is configured to emit a charged particle beam, and

the deflector includes a plurality of deflecting electrodes configured to control a path of the charged particle beam;

an ozone introducing mechanism configured to introduce ozone into the electron optical column;

a first voltage supply unit configured to apply a deflection voltage to the plurality of deflecting electrodes to deflect the charged particle beam; and

a second voltage supply unit configured to apply an identical negative DC voltage to the plurality of deflecting electrodes,

wherein a negative voltage in which the deflection voltage and the negative DC voltage are added to each other is applied to the plurality of deflecting electrodes while the sample is irradiated by the charged particle beam.

2. The charged particle beam writing apparatus according to claim 1 , wherein the deflector includes four or eight deflecting electrodes.

3. The charged particle beam writing apparatus according to claim 1 , wherein the deflector includes eight deflecting electrodes that are separately arranged so as to form a regular octagon, the deflector directing the path of the charged particle beam through the center of the eight deflecting electrodes.

4. The charged particle beam writing apparatus according to claim 1 , wherein the deflecting electrode is also used as an electrostatic lens by applying the negative DC voltage to the deflecting electrode by the second voltage supply unit.

5. The charged particle beam writing apparatus according to claim 1 , wherein the negative DC voltage applied to the deflecting electrode by the second voltage supply unit has an absolute value larger than that of the deflection voltage applied by the first voltage supply unit.

6. The charged particle beam writing apparatus according to claim 1 , wherein the negative DC voltage applied to the deflecting electrode by the second voltage supply unit is a negative voltage within a range of a voltage smaller than 0 V and a voltage equal to or larger than −350 V.

7. The charged particle beam writing apparatus according to claim 1 , wherein the ozone introducing mechanism includes:

an ozone generator configured to generate the ozone;

a valve configured to control a flow rate of the ozone introduced from the ozone generator into the electron optical column;

a pressure meter configured to measure a pressure in the electron optical column; and

a pump configured to discharge the excess ozone generated by the ozone generator.

8. The charged particle beam writing apparatus according to claim 1 , wherein the charged particle beam writing apparatus is configured so that the ozone introduced into the electron optical column contacts the deflector.

9. A charged particle beam writing method comprising:

introducing ozone into a charged particle beam writing apparatus in which a charged particle gun and a deflector are arranged, the charged particle gun emitting a charged particle beam, the deflector constructed with a plurality of deflecting electrodes;

irradiating a sample with a charged particle beam in order to align a position irradiated with the charged particle beam;

applying an identical negative DC voltage to the plurality of deflecting electrodes of the deflector to measure the position irradiated with the charged particle beam;

applying a deflection voltage to the plurality of deflecting electrodes of the deflector to confirm that the position to be irradiated by the charged particle beam is the desired position; and

applying a negative voltage, in which the deflection voltage and the negative DC voltage are added to each other, to the plurality of deflecting electrodes of the deflector while the ozone is introduced into the charged particle beam writing apparatus, and irradiating the sample with the charged particle beam.

10. The charged particle beam writing method according to claim 9 , wherein

the electromagnetic lens is arranged in the charged particle beam writing apparatus to align the position irradiated with the charged particle beam, and

the method further comprising, before the process of confirming that the position to be irradiated by the charged particle beam is the desired position, adjusting the negative DC voltage applied to the plurality of deflecting electrodes of the deflector so that the negative DC voltage becomes larger while maintaining the desired position irradiated with the charged particle beam using an electromagnetic lens and the deflector.

11. The charged particle beam writing method according to claim 9 , wherein the ozone introduced into the charged particle beam writing apparatus is diffused onto a side on which the deflector exists.

12. The charged particle beam writing method according to claim 9 , wherein the negative DC voltage applied to the deflecting electrode has an absolute value larger than that of the deflection voltage applied to the deflecting electrode, while the sample is irradiated with the charged particle beam.

13. The charged particle beam writing method according to claim 9 , wherein the negative DC voltage applied to the deflecting electrode is a negative voltage within a range of a voltage smaller than 0 V and a voltage equal to or larger than −350 V, while the sample is irradiated with the charged particle beam.