Semiconductor device and method for fabricating the same
A method for fabricating semiconductor device is disclosed. The method includes the steps of: (a) providing a substrate; (b) forming a gate structure on the substrate; (c) performing a first deposition process to form a first epitaxial layer adjacent to the gate structure and performing a first etching process to remove part of the first epitaxial layer at the same time; and (d) performing a second etching process to remove part of the first epitaxial layer.
1. A method for fabricating semiconductor device, comprising:
(a) providing a substrate;
(b) forming a gate structure on the substrate;
(c) performing a first deposition process to form a first epitaxial layer adjacent to the gate structure and performing a first etching process to remove part of the first epitaxial layer at the same time; and
(d) performing a second etching process to remove part of the first epitaxial layer.
2. The method of claim 1 , further comprising repeating steps (c) and (d).
3. The method of claim 1 , further comprising forming dislocations on the first epitaxial layer in step (c).
4. The method of claim 3 , further comprising performing the second etching process to remove the dislocations.
5. The method of claim 1 , further comprising flowing silane-containing gas during the first deposition process.
6. The method of claim 1 , further comprising flowing chlorine-containing gas during the first etching process.
7. The method of claim 1 , further comprising flowing chlorine-containing gas during the second etching process.
8. The method of claim 1 , further comprising:
(e) performing a second deposition process to form a second epitaxial layer adjacent to the gate structure and performing a third etching process to remove part of the second epitaxial layer at the same time; and
(f) performing a fourth etching process to remove part of the second epitaxial layer.
9. The method of claim 8 , further comprising forming dislocations on the second epitaxial layer in step (e).
10. The method of claim 9 , further comprising performing the fourth etching process to remove the dislocations.
11. The method of claim 8 , wherein the duration of step (c) is greater than the duration of step (e).
12. The method of claim 8 , wherein the duration of step (d) is greater than the duration of step (f).
13. The method of claim 8 , wherein the first epitaxial layer and the second epitaxial layer comprise SiP.