IP Library › Granted Patent US 9,502,335
Granted Patent B2
US 9,502,335 · App. 14/487,548 · Granted Nov 22, 2016

Package structure and method for fabricating the same

Inventors: Chieh-Lung Lai (Taichung, TW); Hsien-Wen Chen (Taichung, TW); Hong-Da Chang (Taichung, TW); Mao-Hua Yeh (Taichung, TW)
Assignee: Siliconware Precision Industries Co., Ltd.
H01L23/49H01L21/56H01L23/3107H01L25/105H01L25/50H01L2224/16225H01L2224/48091H01L2224/48227H01L2225/1052H01L2924/15311H01L2924/181
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Quick Facts
Patent No.
US 9,502,335
App. No.
14/487,548
Granted
Nov 22, 2016
Kind
B2
Abstract

A package structure is provided, which includes: a chip carrier having a plurality of conductive connection portions; at least an electronic element disposed on the chip carrier; a plurality of conductive wires erectly positioned on the conductive connection portions, respectively; an encapsulant formed on the chip carrier for encapsulating the conductive wires and the electronic element, wherein one ends of the conductive wires are exposed from the encapsulant; and a circuit layer formed on the encapsulant and electrically connected to exposed ends of the conductive wires. According to the present invention, the conductive wires serve as an interconnection structure. Since the wire diameter of the conductive wires is small and the pitch between the conductive wires can be minimized, the present invention reduces the size of the chip carrier and meets the miniaturization requirement.

Claims (37)

1. A package structure, comprising:

a chip carrier having a plurality of conductive connection portions;

at least an electronic element disposed on the chip carrier;

a plurality of conductive wires positioned on the conductive connection portions, respectively, wherein each of the conductive wires has opposite first and second ends and the conductive wires are bonded to the conductive connection portions via the first ends thereof, wherein a certain number of the conductive wires are formed in a vertical line shape by wire bonding and another certain number of the conductive wires are formed in a curved shape by wire bonding;

an encapsulant formed on the chip carrier for encapsulating the conductive wires and the electronic element, wherein the encapsulant has opposite first and second surfaces and a side surface adjacent to the first and second surfaces, the encapsulant is bonded to the chip carrier and the conductive connection portions via the first surface thereof, the second ends of the conductive wires in the vertical line shape are exposed from the second surface of the encapsulant, and the second ends of the conductive wires in the curved shape are exposed from the side surface of the encapsulant;

a redistribution layer (RDL), an under bump metallization (UBM) layer, an anisotropic conductive film (ACF) layer, or an organic solderability preservative (OSP) layer formed on the side surface of the encapsulant and in contact with the exposed second ends of the conductive wires in the curved shape; and

a circuit layer formed on the second surface of the encapsulant and electrically connected to the exposed second ends of the conductive wires in the vertical shape.

2. The package structure of claim 1 , wherein a circuit structure having opposite first and second sides is formed in the chip carrier in a manner that the conductive connection portions are formed on the first side of the circuit structure.

3. The package structure of claim 2 , wherein a plurality of conductive elements are formed on the second side of the circuit structure and electrically connected to the circuit structure.

4. The package structure of claim 2 , wherein a carrier is disposed on the second side of the circuit structure and electrically connected to the circuit structure.

5. The package structure of claim 4 , wherein a plurality of conductive through holes are formed in the carrier and electrically connected to the circuit structure.

6. The package structure of claim 4 , wherein the carrier is made of a semiconductor material, a dielectric material, ceramic or metal.

7. The package structure of claim 1 , wherein the electronic element is electrically connected to the chip carrier.

8. The package structure of claim 1 , wherein the electronic element is exposed from the second surface of the encapsulant.

9. The package structure of claim 1 , wherein the conductive wires have a wire diameter ranged from 0.01 to 0.15 mm.

10. The package structure of claim 1 , wherein a pitch between any adjacent two of the conductive wires is in the 0.03 to 0.3 mm range.

11. The package structure of claim 1 , further comprising at least an electronic device stacked on the second surface of the encapsulant and electrically connected to the circuit layer.

12. The package structure of claim 11 , wherein the electronic device is stacked on and electrically connected to the circuit layer through a plurality of conductive elements.

13. A method for fabricating a package structure, comprising the steps of:

providing a chip carrier having a plurality of conductive connection portions and disposing at least an electronic element on the chip carrier;

positioning a plurality of conductive wires on the conductive connection portions by wire bonding, respectively, wherein each of the conductive wires has opposite first and second ends and the conductive wires are bonded to the conductive connection portions via the first ends thereof, and wherein a certain number of the conductive wires are in a vertical line shape and another certain number of the conductive wires are in a curved shape;

forming an encapsulant on the chip carrier for encapsulating the conductive wires and the electronic element, wherein the encapsulant has opposite first and second surfaces and a side surface adjacent to the first and second surfaces, the encapsulant is bonded to the chip carrier and the conductive connection portions via the first surface thereof, the second ends of the conductive wires in the vertical line shape are exposed from the second surface of the encapsulant, and the second ends of the conductive wires in the curved shape are exposed from the side surface of the encapsulant;

forming a circuit layer on the second surface of the encapsulant, wherein the circuit layer is electrically connected to the exposed second ends of the conductive wires in the vertical line shape; and

forming a redistribution layer (RDL), an under bump metallization (UBM) layer, an anisotropic conductive film (ACF) layer, or an organic solderability preservative (OSP) layer on the side surface of the encapsulant, wherein the RDL, the UBM layer, the ACF layer, or the OSP layer is in contact with the exposed second ends of the conductive wires in the curved shape.

14. The method of claim 13 , wherein the chip carrier further has a circuit structure having opposite first and second sides and allowing the conductive connection portions to be formed on the first side thereof.

15. The method of claim 14 , wherein a plurality of conductive elements are formed on the second side of the circuit structure and electrically connected to the circuit structure.

16. The method of claim 14 , wherein the chip carrier further has a carrier disposed on the second side of the circuit structure and electrically connected to the circuit structure.

17. The method of claim 16 , after forming the circuit layer, further comprising removing the carrier.

18. The method of claim 16 , wherein the carrier has a plurality of conductive through holes formed therein and electrically connected to the circuit structure.

19. The method of claim 16 , wherein the carrier is made of a semiconductor material, a dielectric material, ceramic or metal.

20. The method of claim 13 , wherein the electronic element is electrically connected to the chip carrier.

21. The method of claim 13 , wherein the electronic element is exposed from the second surface of the encapsulant.

22. The method of claim 13 , wherein the conductive wires are formed by wire bonding.

23. The method of claim 13 , wherein the conductive wires have aa wire diameter ranged from 0.01 to 0.15 mm.

24. The method of claim 13 , wherein a pitch between any adjacent two of the conductive wires is in the 0.03 to 0.3 mm range.

25. The method of claim 13 , further comprising stacking at least an electronic device on the second surface of the encapsulant, wherein the electronic device is electrically connected to the circuit layer.

26. The method of claim 25 , wherein the electronic device is stacked on and electrically connected to the circuit layer through a plurality of conductive elements.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 16, 2014
From: LAI, CHIEH-LUNG; CHEN, HSIEN-WEN; CHANG, HONG-DA; YEH, MAO-HUA
To: SILICONWARE PRECISION INDUSTRIES CO., LTD.
Reel/Frame 033749/0318 →
Priority Claims (1)
TW 103116365 A · May 8, 2014 · national
Continuity (1)
Related Publication 20150325556A1 · Nov 12, 2015