Plasma etching method and plasma etching apparatus
Disclosed is a plasma etching method including a deposition process and an etching process. For a processing target object including a base layer and a photoresist having a predetermined pattern which are laminated in sequence, the deposition process deposits a protective layer including silicon and carbon on the photoresist of the processing target object by plasma of a first processing gas including silicon tetrachloride gas, methane gas, and hydrogen gas. The etching process etches the base layer by plasma of a second processing gas using the photoresist including the protective layer deposited thereon, as a mask. The second processing gas is different from the first processing gas.
1. A plasma etching method comprising:
depositing a protective layer including silicon and carbon on a photoresist of a processing target object by plasma of a first processing gas including silicon tetrachloride gas, methane gas, and hydrogen gas, the processing target object including a base layer and the photoresist having a predetermined pattern which are laminated in sequence; and
etching the base layer by plasma of a second processing gas using the photoresist including the protective layer deposited thereon, as a mask, the second processing gas being different from the first processing gas,
wherein, in the depositing of the protective layer including silicon and carbon on the photoresist, no bias voltage is applied to the processing target object.
2. The plasma etching method according to claim 1 , further comprising, after the depositing of the protective layer on the photoresist:
curing the protective layer by plasma of a third processing gas including hydrogen gas and an inert gas in a state where a negative direct current (DC) voltage is applied to an upper electrode disposed to face the processing target object and containing silicon,
wherein the etching includes etching the base layer by plasma of the second processing gas using the photoresist including the protective layer deposited and cured thereon, as a mask.
3. The plasma etching method according to claim 1 , wherein the second processing gas includes CF 4 gas, CHF 3 gas, and O 2 gas.
4. The plasma etching method according to claim 1 , wherein a flow rate of CH 4 gas is 80% or less of a sum of a flow rate of SiCl 4 gas and the flow rate of CH 4 gas.