IP Library Granted Patent US 9,540,732
Granted Patent B2
US 9,540,732 · App. 14/339,243 · Granted Jan 10, 2017

Plasma processing equipment and gas distribution apparatus thereof

Inventor: Liqiang Yao (Beijing, CN)
Assignee: Beijing NMC Co., Ltd.
C23C16/45565C23C16/513H01J37/3244H01J37/32541H01J2237/006H01J2237/332H01J2237/334H01L21/67069
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Quick Facts
Patent No.
US 9,540,732
App. No.
14/339,243
Granted
Jan 10, 2017
Kind
B2
Abstract

A gas distribution apparatus for a plasma processing equipment is provided. The gas distribution apparatus includes a support plate ( 3 ) and a showerhead electrode ( 5 ) that are secured together parallelly to define a chamber for gas distribution. A first gas distribution plate ( 4 ) is arranged in the chamber horizontally. On an upper surface of the gas distribution plate ( 4 ), at least one circumferential gas-flow groove ( 41 ) around its axis and a plurality of radial gas-flow grooves ( 42 ) communicating with the at least one circumferential gas-flow groove ( 41 ) is arranged. A plurality of axial viahole ( 43 ) are formed in the at least one circumferential gas-flow groove ( 41 ) and the plurality of radial gas-flow grooves ( 42 ). The gas distribution apparatus can achieve a uniform gas distribution in the plasma processing equipment.

Claims (15)

1. A gas distribution apparatus used for a plasma processing equipment, comprising a horizontally arranged support plate which is fixedly connected to a top electrode of the plasma processing equipment, a first air inlet passage is provided at a central position of the support plate; a showerhead electrode, which is parallel to the support plate, is fixedly connected below the support plate, a first gas distribution plate is horizontally arranged in a chamber between the support plate and the showerhead electrode, and the first gas distribution plate has a plurality of axial viahole; a central position of the first gas distribution plate is corresponding to the central position of the support plate;

wherein at least one circumferential gas-flow groove surrounding the central position of the first gas distribution plate and a plurality of radial gas-flow grooves communicating with the at least one circumferential gas-flow groove are arranged on an upper surface of the gas distribution plate; the plurality of axial viahole are arranged in the at least one circumferential gas-flow groove and the plurality of radial gas-flow grooves;

wherein the support plate further comprises a second air inlet passage which is deviated from the central position of the support plate, a distance between the second air inlet passage and the first air inlet passage is larger than a radius of the first gas distribution plate;

a second gas distribution plate is further included in the chamber between the support plate and the showerhead electrode, and the second gas distribution plate closely surrounds the first gas distribution plate, and a chamber on top of the first gas distribution plate is separated from that on top of the second gas distribution plate by a sealing ring, the second gas distribution plate includes a plurality of circumferential gas-flow grooves and a plurality of radial gas-flow grooves communicating with the plurality of circumferential gas-flow groove; a plurality of axial viahole are arrange in the plurality of circumferential gas-flow groove and the plurality of radial gas-flow grooves; the second air inlet passage corresponds to one circumferential gas-flow groove of the second gas distribution plate;

a density of the axial viahole located in one and the same circumferential gas-flow groove in the second gas distribution plate successively increases outwards along the radial direction of the second gas distribution plate; and

the plurality of circumferential gas-flow grooves, a width of the plurality of circumferential gas-flow grooves successively increasing outwards along the radial direction of the second gas distribution plate.

2. The gas distribution apparatus as claimed in claim 1 , wherein the plurality of radial gas-flow grooves are uniformly distributed, and widths of the plurality of radial gas-flow grooves are gradually reduced outwards along a radial direction of the first gas distribution plate.

3. The gas distribution apparatus as claimed in claim 2 , wherein a minimal cross-section areas of all the axial viahole in one and the same circumferential gas-flow groove are the same; minimal cross-section area of each axial viahole in one and the same radial gas-flow groove gradually increases outwards along the radial direction of the first gas distribution plate.

4. The gas distribution apparatus as claimed in claim 3 , wherein a density of the axial viahole in one and the same radial gas-flow groove gradually increases outwards along the radial direction of the first gas distribution plate.

5. The gas distribution apparatus as claimed in claim 4 , wherein the first gas distribution plate comprises a plurality of circumferential gas-flow grooves, a width of each of which successively increases outwards along the radial direction of the first gas distribution plate.

6. The gas distribution apparatus as claimed in claim 1 , wherein a width of the one circumferential gas-flow groove which is corresponding to the second air inlet passage gradually reduces in the direction of gas flow.

7. The gas distribution apparatus as claimed in claim 6 , wherein a width of the respective radial gas-flow grooves in the second gas distribution plate gradually increases outwards along a radial direction of the second gas distribution plate.

8. The gas distribution apparatus as claimed in claim 7 , wherein a minimal cross-section area of respective axial viahole located in one and the same circumferential gas-flow groove in the second gas distribution plate successively increases outwards along the radial direction of the second gas distribution plate.

9. A plasma processing equipment, comprising: the gas distribution apparatus as claimed in claim 1 .

10. The plasma processing equipment as claimed in claim 9 , wherein the plasma processing equipment is a plasma etching equipment or a plasma deposition equipment.

Assignments (1)
CHANGE OF NAME Recorded Jun 25, 2018
From: BEIJING NMC CO., LTD
To: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.
Reel/Frame 046419/0493 →
Priority Claims (1)
CN 2008 1 0056179 · Jan 14, 2008 · national
Continuity (2)
Division 12811991
Related Publication 20140332605A1 · Nov 13, 2014