IP Library › Granted Patent US 9,543,348
Granted Patent B2
US 9,543,348 · App. 14/912,373 · Granted Jan 10, 2017

Backlight image sensor chip having improved chip driving performance

Inventors: Kyoung-Sik Park (Gyeonggi-do, KR); Heui Gyun Ahn (Gyeonggi-do, KR); Min-Suk Ko (Gyeonggi-do, KR); Gab-Hwan Cho (Gyeonggi-do, KR)
Assignee: SILICONFILE TECHNOLOGIES INC.
H01L27/1464H01L27/1469H01L27/14634H01L27/14636H01L27/14621H01L27/14627
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Quick Facts
Patent No.
US 9,543,348
App. No.
14/912,373
Granted
Jan 10, 2017
Kind
B2
Abstract

The present invention relates to a backlight image sensor chip having improved chip driving performance, in which a region other than a pad region, on which a conductive pad is formed, and a sensing region, on which an optical filter is formed, is used as a region for auxiliary driving so that additional functions such as auxiliary power supply, auxiliary signal transmission and auxiliary operation control can be performed, without additional process, in the backlight image sensor chip having a restricted area, thereby improving the chip driving performance.

Claims (23)

1. A backlight image sensor having improved chip driving performance, which includes an element stacked unit having a semiconductor substrate, a semiconductor circuit module formed on a front side of the semiconductor substrate, an image sensor module and an interlayer insulation layer, an insulation multi-layer formed on a back side of the semiconductor substrate, a conductive pad formed on a portion of the back side of the insulation multi-layer, and a coupling unit electrically coupled between the conductive pad and the semiconductor circuit module of the element stacked unit, comprising:

at least one routing metal formed in a region of a same layer as the conductive pad, and being electrically coupled to and directly contacting the conductive pad;

at least one auxiliary driving unit formed in the element stacked unit or the insulation multi-layer; and

an auxiliary coupling unit being electrically coupled between the at least one routing metal and the at least one auxiliary driving unit.

2. The backlight image sensor having improved chip driving performance of claim 1 , wherein the at least one auxiliary driving unit is at least one auxiliary power line for an auxiliary power supply.

3. The backlight image sensor having improved chip driving performance of claim 1 , wherein the at least one auxiliary driving unit is at least one auxiliary signal transmission line for auxiliary signal transmission.

4. The backlight image sensor having improved chip driving performance of claim 1 , wherein the at least one auxiliary driving unit is an active element or a passive element for an auxiliary operation control.

5. The backlight image sensor having improved chip driving performance of claim 1 , wherein the at least one routing metal is composed of a multi-layer structure, each of the routing metal is electrically coupled to each other through via, and at least one routing metal is electrically coupled to the at least one auxiliary driving unit through the auxiliary coupling unit.

6. The backlight image sensor having improved chip driving performance of claim 1 , wherein the insulation multi-layer comprises:

an anti-reflection layer that is deposited on the back side of the semiconductor substrate;

a preferential metal deposition (PDM) dielectric layer; and

an insulation layer stacked on a back side of the PDM dielectric layer.

7. The backlight image sensor having improved chip driving performance of claim 1 , further comprising:

a dielectric layer stacked on a back side of the insulation multi-layer and configured to protect and support the conductive pad and the routing metal.

8. The backlight image sensor having improved chip driving performance of claim 1 , further comprising:

a micro-lens configured to concentrate a light; and

an optical filter configured to pass a specific frequency band of the light concentrated by the micro-lens.

9. The backlight image sensor having improved chip driving performance of claim 8 , further comprising:

a handling substrate formed on a front side of the element stacked unit.

10. The backlight image sensor having improved chip driving performance of claim 1 , wherein the auxiliary coupling unit is directly connected to the at least one routing metal and the at least one auxiliary driving unit.

11. The backlight image sensor having improved chip driving performance of claim 1 , wherein the at least one auxiliary driving unit is disposed between the semiconductor circuit module and the image sensor module.

12. The backlight image sensor having improved chip driving performance of claim 1 , further comprising:

a metal shield between the at least one routing metal and an optical filter.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 20, 2017
From: SILICONFILE TECHNOLOGIES INC.
To: SK HYNIX INC.
Reel/Frame 041023/0187 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 16, 2016
From: PARK, KYOUNG-SIK; AHN, HEUI GYUN; KO, MIN-SUK; CHO, GAB-HWAN
To: SILICONFILE TECHNOLOGIES INC.
Reel/Frame 037745/0554 →
Priority Claims (1)
KR 10-2013-0096910 · Aug 14, 2013 · national
Continuity (1)
Related Publication 20160204157A1 · Jul 14, 2016