Solid-state imaging device with suppression of color mixture, manufacturing method thereof, and electronic apparatus
A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.
1. An imaging device, comprising:
a semiconductor substrate having a first side as a light-receiving side, and a second side opposite to the first side;
a plurality of photoelectric conversion regions in the semiconductor substrate;
a plurality of element isolation regions comprising a first element isolation region and a second element isolation region each provided between adjacent photoelectric conversion regions of the plurality of photoelectric conversion regions; and
a multilayer wiring layer disposed at the second side of the semiconductor substrate,
wherein the first element isolation region and the second element isolation region each comprise a p-type semiconductor layer,
wherein the first element isolation region comprises a first trench and the second element isolation region comprises a second trench, the first and second trenches each having an opening at the first side of the semiconductor substrate, and
wherein an insulating film is disposed continuously on the first side of the semiconductor substrate from an inside of the first trench to an inside of the second trench.
2. The imaging device according to claim 1 , wherein at least one of the first trench and the second trench comprise a void within the insulating film.
3. The imaging device according to claim 2 , wherein the insulating film comprises a silicon oxide film.
4. The imaging device according to claim 2 , wherein the insulating film comprises a hafnium dioxide film.
5. The imaging device according to claim 1 , wherein the insulating film comprises a silicon oxide film.
6. The imaging device according to claim 1 , wherein the insulating film comprises a hafnium dioxide film.
7. The imaging device according to claim 1 , wherein the insulating film comprises a silicon oxide film and a hafnium dioxide film.
8. The imaging device according to claim 1 , wherein the insulating film comprises layers of a silicon oxide film and a hafnium dioxide film.
9. The imaging device according to claim 1 , wherein the insulating film has a negative fixed charge.
10. The imaging device according to claim 1 , further comprising a plurality of light-shielding layers disposed at the first side of the semiconductor substrate.
11. The imaging device according to claim 10 , wherein the plurality of light-shielding layers are disposed corresponding to the plurality of element isolation regions.
12. The imaging device according to claim 11 , wherein the plurality of light-shielding layers are directly above the plurality of element isolation regions.
13. The imaging device according to claim 10 , further comprising a color filter disposed above the plurality of light-shielding layers.
14. The imaging device according to claim 13 , further comprising an on-chip lens disposed above the color filter.
15. A method for manufacturing an imaging device, comprising:
forming a plurality of photoelectric conversion regions in a semiconductor substrate having a first side as a light-receiving side, and a second side opposite to the first side;
forming a plurality of element isolation regions comprising a first element isolation region and a second element isolation region each provided between adjacent photoelectric conversion regions of the plurality of photoelectric conversion regions; and
forming a multilayer wiring layer at the second side of the semiconductor substrate,
wherein the first element isolation region and the second element isolation region each comprise a p-type semiconductor layer,
wherein the first element isolation region comprises a first trench and the second element isolation region comprises a second trench, the first and second trenches each having an opening at the first side of the semiconductor substrate, and
wherein an insulating film is disposed continuously on the first side of the semiconductor substrate from an inside of the first trench to an inside of the second trench.
16. The method according to claim 15 , wherein at least one of the first trench and the second trench comprise a void within the insulating film.
17. The method according to claim 16 , wherein the insulating film comprises a silicon oxide film and a hafnium dioxide film.
18. An electronic apparatus comprising:
an imaging device, comprising:
a semiconductor substrate having a first side as a light-receiving side, and a second side opposite to the first side;
a plurality of photoelectric conversion regions in the semiconductor substrate;
a plurality of element isolation regions comprising a first element isolation region and a second element isolation region each provided between adjacent photoelectric conversion regions of the plurality of photoelectric conversion regions; and
a multilayer wiring layer disposed at the second side of the semiconductor substrate,
wherein the first element isolation region and the second element isolation region each comprise a p-type semiconductor layer,
wherein the first element isolation region comprises a first trench and the second element isolation region comprises a second trench, the first and second trenches each having an opening at the first side of the semiconductor substrate, and
wherein an insulating film is disposed continuously on the first side of the semiconductor substrate from an inside of the first trench to an inside of the second trench.
19. The electronic apparatus according to claim 18 , wherein at least one of the first trench and the second trench comprise a void within the insulating film.
20. The electronic apparatus according to claim 19 , wherein the insulating film comprises a silicon oxide film and a hafnium dioxide film.