Semiconductor package assembly with through silicon via interconnect

1. A semiconductor package assembly with a through silicon via (TSV) interconnect, comprising:

a first semiconductor die mounted on a base, comprising:

a semiconductor substrate;

a first array of TSV interconnects and a second array of TSV interconnects formed through the semiconductor substrate, wherein the first array and second array of TSV interconnects are separated by an interval region; and

a first ground TSV interconnect disposed within the interval region; and

a second semiconductor die mounted on the first semiconductor die, having a ground pad thereon,

wherein the first ground TSV interconnect of the first semiconductor die has a first terminal coupled to the ground pad of the second semiconductor die and a second terminal coupled to an interconnection structure disposed on a front side of the semiconductor substrate wherein the first semiconductor die further comprises: a conductive layer pattern disposed on a back side of the semiconductor substrate, in connection with the first terminal of the first ground TSV interconnect or a second ground TSV interconnect.

2. The semiconductor package assembly with a TSV interconnect as claimed in claim 1 , wherein the first terminal is close to a back side of the semiconductor substrate opposite to the front side.

3. The semiconductor package assembly with a TSV interconnect as claimed in claim 1 , wherein the second terminal is aligned to the front side of the semiconductor substrate.

4. The semiconductor package assembly with a TSV interconnect as claimed in claim 1 , wherein the second terminal is in connection with a first-layer metal pattern of the interconnection structure.

5. The semiconductor package assembly with a TSV interconnect as claimed in claim 1 , wherein the ground pad of the second semiconductor die corresponds to a second ground TSV interconnect of a first array of TSV interconnects or the second array of TSV interconnects of the first semiconductor die.

6. The semiconductor package assembly with a TSV interconnect as claimed in claim 1 , wherein the interval region having a width greater than a pitch of the first array of TSV interconnects and a pitch of second array of TSV interconnects.

7. The semiconductor package assembly with a TSV interconnect as claimed in claim 1 , wherein the second terminal is coupled to the input signal ground (Vss).

8. The semiconductor package assembly with a TSV interconnect as claimed in claim 1 , wherein the first semiconductor die further comprises:

a first array of conductive bumps and a second array of conductive bumps disposed on the first semiconductor die and in contact with the base, wherein the first array of conductive bumps corresponds to the first array of TSV interconnects, the second array of conductive bumps corresponds to the second array of TSV interconnects.

9. The semiconductor package assembly with a TSV interconnect as claimed in claim 8 , wherein the first semiconductor die further comprises:

a first ground conductive bump disposed within the interval region on the first semiconductor die and in contact with the base, wherein the first ground conductive bump is coupled to the first ground TSV interconnect.

10. A semiconductor package assembly with a through silicon via (TSV) interconnect, comprising:

a first semiconductor die mounted on a base, comprising:

a semiconductor substrate;

a first array of TSV interconnects and a second array of TSV interconnects formed through the semiconductor substrate, wherein the first array and second array of TSV interconnects are separated by an interval region;

a first ground TSV interconnect disposed within the interval region, coupled to an interconnection structure disposed on a front side of the semiconductor substrate; and

a conductive layer pattern disposed on a back side of the semiconductor substrate, in connection with to the first ground TSV interconnect and a second ground TSV interconnect of the first array of TSV interconnects or the second array of TSV interconnects of the first semiconductor die.

11. The semiconductor package assembly with a TSV interconnect as claimed in claim 10 , further comprising:

a second semiconductor die mounted on the first semiconductor die, having a ground pad thereon, wherein the conductive layer pattern of the first semiconductor die is coupled to the ground pad of the second semiconductor die.

12. The semiconductor package assembly with a TSV interconnect as claimed in claim 10 , wherein the interval region having a width greater than a pitch of the first array of TSV interconnects and a pitch of second array of TSV interconnects.

13. The semiconductor package assembly with a TSV interconnect as claimed in claim 10 , wherein the first semiconductor die further comprises:

a first array of conductive bumps and a second array of conductive bumps disposed on the first semiconductor die and in contact with the base, wherein the first array of conductive bumps corresponds to the first array of TSV interconnects, and the second array of conductive bumps corresponds to the second array of TSV interconnects.

14. The semiconductor package assembly with a TSV interconnect as claimed in claim 13 , wherein the first semiconductor die further comprises:

a first ground conductive bump disposed within the interval region on the first semiconductor die and in contact with the base, wherein the first ground conductive bump is coupled to the first ground TSV interconnect.

15. A semiconductor package assembly with a through silicon via (TSV) interconnect, comprising:

a first semiconductor die mounted on a base, comprising:

a semiconductor substrate;

a first array of TSV interconnects and a second array of TSV interconnects formed through the semiconductor substrate, wherein the first array and second array of TSV interconnects are separated by an interval region; and

a first ground TSV interconnect disposed within the interval region,

wherein the first ground TSV interconnect of the first semiconductor die has a first terminal coupled to a second ground TSV interconnect of the first array of TSV interconnects or the second array of TSV interconnects of the first semiconductor die and a second terminal coupled to the input signal ground (Vss), wherein the first semiconductor die further comprises: a conductive layer pattern disposed on a back side of the semiconductor substrate, in connection with the first terminal of the first ground TSV interconnect or the second ground TSV interconnect; and

wherein the first ground TSV interconnect is separated from the first array of TSV interconnects by a first distance larger than a pitch of the first array of TSV interconnects.

16. The semiconductor package assembly with a TSV interconnect as claimed in claim 15 , further comprising:

a second semiconductor die mounted on the first semiconductor die, having a ground pad thereon, wherein the conductive layer pattern of the first semiconductor die is coupled to the ground pad of the second semiconductor die.

17. The semiconductor package assembly with a TSV interconnect as claimed in claim 15 , wherein the first semiconductor die further comprises:

a first array of conductive bumps and a second array of conductive bumps disposed on the first semiconductor die and in contact with the base, wherein the first array of conductive bumps corresponds to the first array of TSV interconnects, the second array of conductive bumps corresponds to the second array of TSV interconnects.

18. The semiconductor package assembly with a TSV interconnect as claimed in claim 15 , wherein the first semiconductor die further comprises:

a first ground conductive bump disposed within the interval region on the first semiconductor die and in contact with the base, wherein the first ground conductive bump is coupled to the first ground TSV interconnect.