Method of removing dummy gate dielectric layer
A method of removing a dummy gate dielectric layer is provided. Firstly a first plasma containing F is utilized to remove the dummy dielectric layer which contains Si and O. Then a second plasma containing H 2 is utilized to remove fluorine compound on the surface of the semiconductor substrate. Since the fluorine residue formed after the first plasma treatment reacts with the second plasma to form a gaseous product HF, the fluorine element can be taken away from the semiconductor device with the HF, which prevents inversion layer offset and gate current leakage occurred in the subsequent processing steps due to the fluorine element.
1. A method of forming a metal gate comprising the steps of:
forming a dummy gate dielectric layer and a dummy gate electrode on a surface of a semiconductor substrate;
forming sidewall spacers on opposing sides of dummy gate electrode and the dummy gate dielectric layer;
forming source/drain regions in the semiconductor substrate;
depositing an interlayer insulating layer and an interlayer dielectric layer;
removing a portion of the interlayer insulating layer and the interlayer dielectric layer above the dummy gate electrode to expose the dummy gate electrode;
removing the dummy gate electrode;
removing the dummy gate dielectric layer by a first plasma to expose the semiconductor substrate;
then removing a fluorinated compound on the surface of the semiconductor substrate by a second plasma;
forming a gate dielectric layer and a metal gate in sequence on the surface of the semiconductor substrate within sidewall spacers;
wherein a material of the dummy gate dielectric layer contains Si and O; the first plasma contains F, and the second plasma contains H 2 .
2. The method according to claim 1 , wherein a dielectric constant of the gate dielectric layer is higher than that of the dummy gate dielectric layer.
3. The method according to claim 1 , wherein a material of gate dielectric layer is HfO 2 or ZrO 2 .
4. The method according to claim 1 , wherein the first plasma contains NF 3 and NH 3 .
5. The method according to claim 1 , wherein the second plasma is a remote plasma.
6. The method according to claim 1 , wherein the second plasma is H 2 plasma which removes the fluorinated compound at a temperature between 0° C. to 400° C., at a flow rate between 1000 sccm to 15000 sccm, and at a radio-frequency power between 50 W to 1500 W.
7. The method according to claim 1 , wherein the second plasma is H2/N2 plasma which removes the fluorinated compound at a temperature between 0° C. to 400° C., at a flow rate of N2 between 1000 sccm to 15000 sccm and a flow rate of N2 between 1000 sccm to 20000 sccm, and at a radio-frequency power between 50 W to 1500 W.
8. The method according to claim 1 , wherein the step of removing a dummy gate dielectric layer on a surface of a semiconductor substrate by a first plasma and the step of removing a fluorinated compound on the surface of the semiconductor substrate by a second plasma are performed in a same reaction chamber.
9. The method according to claim 1 wherein a material of the dummy gate dielectric layer contains SiO 2 or SiNO.
10. A method of removing a dummy gate dielectric layer comprising the steps of:
removing a dummy gate dielectric layer on a surface of a semiconductor substrate by a first plasma to expose the semiconductor substrate;
then removing a fluorinated compound on the surface of the semiconductor substrate by a second plasma;
wherein a material of the dummy gate dielectric layer contains Si and O; the first plasma contains F, and the second plasma contains H 2 .
11. The method according to claim 10 , wherein the first plasma contains NF 3 and NH 3 .
12. The method according to claim 10 , wherein the second plasma is a remote plasma.
13. The method according to claim 10 , wherein the second plasma is H 2 plasma which removes the fluorinated compound at a temperature between 0° C. to 400° C., at a flow rate between 1000 sccm to 15000 sccm, and at a radio-frequency power between 50 W to 1500 W.
14. The method according to claim 10 , wherein the second plasma is H2/N2 plasma which removes the fluorinated compound at a temperature between 0° C. to 400° C., at a flow rate of N2 between 1000 sccm to 15000 sccm and a flow rate of N2 between 1000 sccm to 20000 sccm, and at a radio-frequency power between 50 W to 1500 W.
15. The method according to claim 10 , wherein the step of removing a dummy gate dielectric layer on a surface of a semiconductor substrate by a first plasma and the step of removing a fluorinated compound on the surface of the semiconductor substrate by a second plasma are performed in a same reaction chamber.
16. The method according to claim 10 wherein a material of the dummy gate dielectric layer contains SiO 2 or SiNO.