Light emitting device
The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.
1. A semiconductor device comprising:
a transistor including a channel formation region;
a first source wiring and a second source wiring; and
a power supply line electrically connected to the transistor,
wherein the channel formation region overlaps with the power supply line and the second source wiring, and
wherein the power supply line does not overlap with the second source wiring.
2. A semiconductor device according to claim 1 ,
wherein the power supply line includes a first region extending along the first source wiring, and
wherein the second source wiring includes a second region extending along the first source wiring.
3. A semiconductor device according to claim 1 ,
wherein the power supply line includes a region whose width is wider than that of the first source wiring, and
wherein the power supply line includes a region whose width is wider than that of the second source wiring.
4. A semiconductor device according to claim 1 , wherein the transistor operates in a saturation region.
5. A semiconductor device comprising:
a first pixel including a first source wiring, a first power supply line, and a first transistor electrically connected to the first power supply line; and
a second pixel including a second source wiring, a second power supply line, and a second transistor electrically connected to the second power supply line,
wherein the first transistor includes a channel formation region,
wherein the channel formation region overlaps with the first power supply line and the second source wiring, and
wherein the first power supply line does not overlap with the second source wiring.
6. A semiconductor device according to claim 5 ,
wherein the first power supply line includes a region whose width is wider than that of the first source wiring, and
wherein the first power supply line includes a region whose width is wider than that of the second source wiring.
7. A semiconductor device according to claim 5 , wherein the first transistor operates in a saturation region.