Pre space transformer, space transformer manufactured using the pre space transformer, and semiconductor device inspecting apparatus including the space transformer
Disclosed herein is a pre space transformer including: a substrate having a first surface and a second surface, which is an opposite surface to the first surface; individual electrodes disposed on the first surface; and common electrodes disposed in the substrate, wherein the individual electrodes are repeatedly disposed while configuring a unit pattern.
1. A pre space transformer comprising:
a substrate having a first surface and a second surface, which is an opposite surface to the first surface;
individual electrodes disposed on the first surface;
a plurality of vias respectively connected to individual electrodes, and formed to penetrate through the substrate; and
a common electrode disposed in the substrate,
wherein the individual electrodes are repeatedly disposed while configuring a unit pattern,
the unit pattern is provided in a grid shape in which it includes one signal/power electrode and one ground electrode that are disposed to be spaced apart from each other, and
the common electrode includes a common ground electrode spaced apart from the first and second surfaces, the common ground electrode having a plate shape and being electrically connected to the vias connected to the ground electrodes.
2. The pre space transformer according to claim 1 , wherein the individual electrodes include signal/power electrodes and ground electrodes disposed so as to be spaced apart from each other on the same plane.
3. The pre space transformer according to claim 1 , wherein the individual electrodes include signal/power electrodes and ground electrodes.
4. The pre space transformer according to claim 1 , wherein the individual electrodes include signal/power electrodes and ground electrodes having an island-shaped transversal cross section.
5. The pre space transformer according to claim 1 , further comprising a protective film covering at least one of the first surface and the second surface.
6. The pre space transformer according to claim 1 ,
wherein the vias are disposed to form a grid shape.
7. The pre space transformer according to claim 1 , further comprising
electrode pads connected to the vias on the second surface.
8. A space transformer compensating for a difference in a circuit pitch between a semiconductor device and a circuit board, the space transformer comprising:
a substrate having a first surface facing the semiconductor device and a second surface facing the circuit board;
individual electrodes disposed on the first surface while configuring one unit pattern;
a plurality of vias respectively connected to individual electrodes, and formed to penetrate through the substrate;
a common electrode disposed in the substrate;
an insulating pattern covering the first surface so that the individual electrodes are selectively opened;
circuit patterns formed to be electrically connected to the individual electrodes on the insulating pattern; and
connection pins connected to the circuit patterns to thereby be connected to the semiconductor device,
wherein the individual electrodes are repeatedly disposed while configuring a unit pattern,
the unit pattern is provided in a grid shape in which it includes one signal/power electrode and one ground electrode that are disposed to be spaced apart from each other, and
the common electrode includes a common ground electrode spaced apart from the first and second surfaces, the common ground electrode having a plate shape and being electrically connected to the vias connected to the ground electrodes.
9. The space transformer according to claim 8 , wherein the individual electrodes include signal/power electrodes and ground electrodes disposed so as to be spaced apart from each other on the same plane.
10. The space transformer according to claim 8 , wherein the individual electrodes include signal/power electrodes and ground electrodes.
11. The space transformer according to claim 8 , wherein the individual electrodes include signal/power electrodes and ground electrodes having an island-shaped transversal cross section.
12. The space transformer according to claim 8 , wherein the individual electrodes include:
a used electrode selectively opened by a protective pattern to thereby be electrically connected to the connection pin; and
a non-used electrode covered by the protective pattern to thereby not be exposed.
13. A semiconductor device inspecting apparatus for inspecting electrical characteristics of a semiconductor device, the semiconductor device inspecting apparatus comprising:
a printed circuit board receiving an inspecting signal transferred from a tester;
an interposer disposed at one side of the printed circuit board facing the semiconductor device; and
a space transformer receiving the inspecting signal transferred from the interposer to transfer the inspecting signal to the semiconductor device and compensating for a difference in a circuit pitch between the printed circuit board and the semiconductor device,
wherein the space transformer includes:
a substrate having a first surface facing the semiconductor device and a second surface facing the circuit board;
individual electrodes disposed on the first surface while configuring one unit pattern;
a plurality of vias respectively connected to individual electrodes, and formed to penetrate through the substrate;
a common electrode disposed in the substrate;
an insulating pattern covering the first surface so that the individual electrodes are selectively opened;
circuit patterns formed to be electrically connected to the individual electrodes on the insulating pattern; and
connection pins connected to the circuit patterns to thereby be connected to the semiconductor device,
wherein the individual electrodes are repeatedly disposed while configuring a unit pattern,
the unit pattern is provided in a grid shape in which it includes one signal/power electrode and one ground electrode that are disposed to be spaced apart from each other, and
the common electrode includes a common ground electrode spaced apart from the first and second surfaces, the common ground electrode having a plate shape and being electrically connected to the vias connected to the ground electrodes.
14. The semiconductor device inspecting apparatus according to claim 13 , wherein the individual electrodes include signal/power electrodes and ground electrodes disposed so as to be spaced apart from each other on the same plane.
15. The semiconductor device inspecting apparatus according to claim 13 , wherein the individual electrodes include signal/power electrodes and ground electrodes.
16. The semiconductor device inspecting apparatus according to claim 13 , wherein the individual electrodes include signal/power electrodes and ground electrodes having an island-shaped transversal cross section, and
the common electrodes include common ground electrodes having a plate shape.
17. The semiconductor device inspecting apparatus according to claim 13 , wherein the individual electrodes include:
a used electrode selectively opened by a protective pattern to thereby be electrically connected to the connection pin; and
a non-used electrode covered by the protective pattern to thereby not be exposed.