Predisposed high electron mobility transistor
A predisposed high electron mobility transistor (HEMT) is disclosed. The predisposed HEMT includes a buffer layer, a HEMT channel layer on the buffer layer, a first HEMT barrier layer over the HEMT channel layer, and a HEMT cap layer on the first HEMT barrier layer. The HEMT cap layer has a drain region, a source region, and a gate region. Further, the HEMT cap layer has a continuous surface on the drain region, the source region, and the gate region. When no external voltage is applied between the source region and the gate region, the gate region either depletes carriers from the HEMT channel layer or provides carriers to the HEMT channel layer, thereby selecting a predisposed state of the predisposed HEMT.
1. A predisposed high electron mobility transistor (HEMT) comprising:
a Gallium Nitride HEMT channel layer;
a first Aluminum Indium Nitride HEMT barrier layer on the Gallium Nitride HEMT channel layer; and
a Group III Nitride HEMT cap layer having a first surface and a second surface opposite the first surface on the first Aluminum Indium Nitride HEMT barrier layer, the first Aluminum Indium Nitride HEMT barrier layer having a good lattice match with the Gallium Nitride HEMT channel layer, wherein:
the Group III Nitride HEMT cap layer is doped to include a drain region, a source region, and a gate region, wherein:
the Group III Nitride HEMT cap layer has a continuous surface on the drain region, the source region, and the gate region;
the gate region comprises a first type of semiconductor doping; and
the drain region and the source region each comprise a second type of semiconductor doping, which is opposite from the first type of semiconductor doping; and
when no external voltage is applied between the source region and the gate region, the gate region depletes carriers from the Gallium Nitride HEMT channel layer so that the predisposed HEMT is a normally OFF HEMT,
wherein a thickness of the first Aluminum Indium Nitride HEMT barrier layer is between about 1 nanometer and about 3 nanometers.
2. The predisposed HEMT of claim 1 wherein the continuous surface is about planar, and wherein an Indium Nitride concentration in the first Aluminum Indium Nitride HEMT barrier layer is equal to about 17 percent or to about 18 percent.
3. The predisposed HEMT of claim 2 wherein the first type of semiconductor doping is Carbon doping.
4. The predisposed HEMT of claim 3 wherein the second type of semiconductor doping is Silicon implantation doping.
5. The predisposed HEMT of claim 3 wherein the second type of semiconductor doping is Oxygen doping.
6. The predisposed HEMT of claim 1 wherein a carrier concentration of the first type of semiconductor doping is between about 1×e 17 carriers per cubic centimeter and about 5×e 19 carriers per cubic centimeter.
7. The predisposed HEMT of claim 1 wherein a carrier concentration of the second type of semiconductor doping is between about 1×e 17 carriers per cubic centimeter and about 5×e 19 carriers per cubic centimeter.
8. The predisposed HEMT of claim 1 further comprising gate oxide on the Group III Nitride HEMT cap layer, such that the gate oxide shields the gate region from the second type of semiconductor doping.
9. The predisposed HEMT of claim 1 wherein the Gallium Nitride HEMT channel layer and the first Aluminum Indium Nitride HEMT barrier layer are not actively doped.
10. The predisposed HEMT of claim 1 wherein a thickness of the Gallium Nitride HEMT channel layer is between about 20 nanometers and about 40 nanometers.
11. The predisposed HEMT of claim 1 further comprising a second Group III Nitride HEMT barrier layer on the Group III Nitride HEMT channel layer, such that the first Aluminum Indium Nitride HEMT barrier layer is on the second Group III Nitride HEMT barrier layer.
12. The predisposed HEMT of claim 11 wherein the second Group III Nitride HEMT barrier layer comprises Aluminum Nitride.
13. A high electron mobility transistor (HEMT) comprising:
a Gallium Nitride channel layer that is not actively doped;
an Aluminum Indium Nitride barrier layer that is not actively doped directly on the Gallium Nitride channel layer; and
a Group III Nitride cap layer directly on the Aluminum Indium Nitride barrier layer opposite the Gallium Nitride channel layer, wherein:
the Group III Nitride cap layer includes a drain region, a source region, and a gate region, wherein:
the Group III Nitride cap layer has a continuous surface on the drain region, the source region, and the gate region;
the gate region is doped with impurities having a first conductivity type; and
the drain region and the source region are doped with impurities having a second conductivity type that is opposite the first conductivity type so that the Group III Nitride cap layer is doped with opposite conductivity type impurities,
wherein a thickness of the Aluminum Indium Nitride barrier layer is between about 1 nanometer and about 3 nanometers, and
wherein an Indium Nitride concentration in the Aluminum Indium Nitride HEMT barrier layer is equal to about 17 percent or to about 18 percent.
14. The predisposed HEMT of claim 2 wherein the Gallium Nitride channel layer includes a two-dimensional gas sub-layer, the first Aluminum Indium Nitride HEMT barrier layer is directly on the Gallium Nitride HEMT channel layer, and the Group III Nitride HEMT cap layer is directly on the first Aluminum Indium Nitride HEMT barrier layer.
15. The HEMT transistor of claim 14 , wherein the first Aluminum Indium Nitride barrier layer is not actively doped.
16. A high electron mobility transistor (HEMT) comprising:
a Gallium Nitride channel layer;
a second Group III Nitride barrier layer directly on the Gallium Nitride channel layer
a first Group III Nitride barrier layer directly on the second Group III Nitride barrier layer; and
a Group III Nitride cap layer on the first Group III Nitride barrier layer, wherein:
the Group III Nitride cap layer includes a drain region, a source region, and a gate region, wherein:
the Group III Nitride cap layer has a continuous surface on the drain region, the source region, and the gate region;
the gate region is doped with impurities having a first conductivity type; and
the drain region and the source region are doped with impurities having a second conductivity type that is opposite the first conductivity type so that the Group III Nitride cap layer is doped with opposite conductivity type impurities,
wherein a thickness of the first Group III Nitride barrier layer is between about 1 nanometer and about 3 nanometers, and
wherein a thickness of the second Group III Nitride barrier layer is between about 0.5 nanometers and about 2 nanometers and the second Group III Nitride barrier layer is not doped.
17. The HEMT transistor of claim 16 , wherein the Group III Nitride cap layer is directly on the first Group III Nitride barrier layer.
18. The HEMT transistor of claim 17 , wherein the first Group III Nitride barrier layer is a first Aluminum Indium Nitride barrier layer.
19. The HEMT transistor of claim 18 , wherein an Indium Nitride concentration in the first Aluminum Indium Nitride barrier layer is equal to about 17 percent or to about 18 percent.