IP Library Granted Patent US 9,612,205
Granted Patent B2
US 9,612,205 · App. 14/463,947 · Granted Apr 4, 2017

Etching amount measurement apparatus for dry etching apparatus

Inventors: Ganachev IvanPetrov (Kanagawa, JP); Munenori Iwami (Kanagawa, JP)
Assignee: SHIBAURA MECHATRONICS CORPORATION
G01N21/84H01J37/32963H01J37/32972H01L22/12H01L22/26H01L22/30C09K13/00G01B2210/56H01L21/67253
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Quick Facts
Patent No.
US 9,612,205
App. No.
14/463,947
Granted
Apr 4, 2017
Kind
B2
Abstract

According to one embodiment, an etching amount measurement pattern is provided in a surface of a substrate. The pattern comprises a plurality of components two-dimensionally disposed and causing light incident on the pattern to be diffracted, A configuration of the component has 4-fold rotational symmetry. The plurality of components is arranged in a disposition having 4-fold rotational symmetry.

Claims (24)

1. An etching amount measurement apparatus for a dry etching apparatus, comprising:

a placement platform on which a substrate is mounted, the substrate having a first surface and a second surface, an etching amount measurement pattern being provided in the second surface of the substrate, the pattern functioning as a diffraction grating;

a transmissive window being provided at a position that faces the pattern;

a light source irradiating light to the first surface of the substrate through the window, light irradiated to the first surface propagating through an inside of the substrate, said propagating light being incident to the pattern and diffracted by the pattern, said diffracted light propagating through the inside of the substrate, said propagating light being irradiated outside from the first surface;

a first spectral data generating unit generating first spectral data by separating diffracted light from a measurement portion, the pattern being provided in the measurement portion; and

a calculating unit determining an etching amount of the measurement portion from the first spectral data and a relationship between the first spectral data and the etching amount, the relationship being predetermined;

the pattern comprising a plurality of components, a configuration of the component having 4-fold rotational symmetry, the plurality of components being arranged in a disposition having 4-fold rotational symmetry, the plurality of components being formed from a material that inhibits the transmission of incident light, and the substrate being formed from a material that can transmit incident light.

2. The apparatus according to claim 1 , further comprising a data storage unit storing data relating to the predetermined relationship between the etching amount of the measurement portion and the first spectral data.

3. The apparatus according to claim 1 , wherein the configuration of the component is a square.

4. The apparatus according to claim 1 , wherein the total surface area of the plurality of components is the same as the surface area between the plurality of components.

5. The apparatus according to claim 1 , the plurality of components include chrome.

6. An etching amount measurement method performed by the apparatus according to claim 1 , comprising the steps of:

irradiating, by the light source, light toward the pattern;

generating, by the first spectral data generating unit, the first spectral data by separating diffracted light from the measurement portion, the pattern being provided in the measurement portion; and

determining, by the calculating unit, the etching amount of the measurement portion.

7. An etching amount measurement apparatus for a dry etching apparatus, comprising:

a placement platform on which a substrate is mounted, the substrate having a first surface and a second surface, an etching amount measurement pattern being provided in the second surface of the substrate, the pattern functioning as a diffraction grating;

a transmissive window being provided at a position that faces the pattern;

a light source irradiating light to the first surface of the substrate through the window, light irradiated to the first surface propagating through an inside of the substrate, said propagating light being incident to the pattern and diffracted by the pattern, said diffracted light propagating through the inside of the substrate, said propagating light being irradiated outside from the first surface;

a first spectral data generating unit generating first spectral data by separating diffracted light from a measurement portion, the pattern being provided in the measurement portion;

a second spectral data generating unit generating second spectral data relating to the light irradiated from the light source by separating the light irradiated from the light source; and

a calculating unit determining a return rate spectrum from the first spectral data and the second spectral data and determining an etching amount of the measurement portion from the determined return rate spectrum and a relationship between the return rate spectrum and the etching amount of the measurement portion, the relationship being predetermined;

the pattern comprising a plurality of components, a configuration of the component having 4-fold rotational symmetry, the plurality of components being arranged in a disposition having 4-fold rotational symmetry, the plurality of components being formed from a material that inhibits the transmission of incident light, and the substrate being formed from a material that can transmit incident light.

8. The apparatus according to claim 7 , further comprising a data storage unit storing data relating to the predetermined relationship between the etching amount of the measurement portion and the first spectral data or the return rate spectrum.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 27, 2014
From: IVANPETROV, GANACHEV; IWAMI, MUNENORI
To: SHIBAURA MECHATRONICS CORPORATION
Reel/Frame 034039/0226 →
Priority Claims (1)
JP 2013-175634 · Aug 27, 2013 · national
Continuity (1)
Related Publication 20150062578A1 · Mar 5, 2015