Vapor phase growth apparatus having shower plate with multi gas flow passages and vapor phase growth method using the same

1. A vapor phase growth apparatus comprising:

a reaction chamber;

a first gas supply passage through which a first process gas is supplied;

a second gas supply passage through which a second process gas different from the first process gas is supplied;

a shower plate disposed in an upper portion of the reaction chamber and configured to supply gas into the reaction chamber, the shower plate having

first lateral gas flow passages arranged in a first horizontal plane and extending parallel to each other,

a pair of first manifolds connected to the first gas supply passage, the pair of first manifolds provided above the first horizontal plane,

first connection flow passages connecting the pair of first manifolds and the first lateral gas flow passages at both ends of the first lateral gas flow passages and extending in a longitudinal direction,

first longitudinal gas flow passages being connected to the first lateral gas flow passages, the first longitudinal gas flow passages extending in the longitudinal direction, each of the first longitudinal gas flow passages having a first gas ejection hole provided on the reaction chamber side,

second lateral gas flow passages arranged in a second horizontal plane above the first horizontal plane and extending parallel to each other in the same direction as the first lateral gas flow passages,

a pair of second manifolds connected to the second gas supply passage, the pair of second manifolds provided above the second horizontal plane,

second connection flow passages connecting the pair of second manifolds and the second lateral gas flow passages at both ends of the second lateral gas flow passages and extending in the longitudinal direction,

second longitudinal gas flow passages being connected to the second lateral gas flow passages, the second longitudinal gas flow passages extending in the longitudinal direction through between the first lateral gas flow passages, each of the second longitudinal gas flow passages having a second gas ejection hole provided on the reaction chamber side; and

a support unit provided below the shower plate in the reaction chamber, the support unit being capable of placing a substrate thereon.

2. The vapor phase growth apparatus according to claim 1 ,

wherein the second process gas has a kinematic viscosity lower than that of the first process gas.

3. The vapor phase growth apparatus according to claim 1 , wherein an inner diameter of the second longitudinal gas flow passages is larger than an inner diameter of the first longitudinal gas flow passages.

4. The vapor phase growth apparatus according to claim 1 , wherein an interval between the second longitudinal gas flow passages adjacent to each other is smaller than an interval between the first longitudinal gas flow passages adjacent to each other.

5. The vapor phase growth apparatus according to claim 1 , wherein an inner diameter of the second lateral gas flow passages is larger than an inner diameter of the first lateral gas flow passages.

6. The vapor phase growth apparatus according to claim 1 , where in

the first lateral gas flow passages include a first lateral gas flow passage (k) and a first lateral gas flow passage (n), a number of the first longitudinal gas flow passages connected to the first lateral gas flow passage (k) being k (k is an integer not less than 1), a number of the first longitudinal gas flow passages connected to the first lateral gas flow passage (n) being n (k<n, n is an integer not less than 2), fluid resistance of the first connection flow passage connected to the first lateral gas flow passage (k) being larger than fluid resistance of one of the first connection flow passages connected to the first lateral gas flow passage (n), or,

the second lateral gas flow passages include a second lateral gas flow passage (k) and a second lateral gas flow passage (n), a number of second longitudinal gas flow passages connected to the second lateral gas flow passage (k) being k (k is an integer not less than 1), a number of the second longitudinal gas flow passages connected to the second lateral gas flow passage (n) being n (k<n, n is an integer not less than 2), fluid resistance of the second connection flow passage connected to the second lateral gas flow passage (k) being larger than fluid resistance of one of the second connection flow passages connected to the second lateral gas flow passage (n).

7. The vapor phase growth apparatus according to claim 6 , wherein an inner diameter of the first connection flow passage connected to the first lateral gas flow passage (k) is smaller than an inner diameter of the first connection flow passage connected to the first lateral gas flow passage (n), or

an inner diameter of the second connection flow passage connected to the second lateral gas flow passage (k) is smaller than an inner diameter of the second connection flow passage connected to the second lateral gas flow passage (n).

8. The vapor phase growth apparatus according to claim 1 , wherein the first process gas is hydrogen, and the second process gas is ammonia.

9. The vapor phase growth apparatus according to claim 1 , wherein the shower plate further includes

third lateral gas flow passages arranged in a third horizontal plane above the first horizontal plane and below the second horizontal plane and extending parallel to each other in the same direction as the first lateral gas flow passages, and

third longitudinal gas flow passages connected to the third lateral gas flow passages, the third longitudinal gas flow passages extending in the longitudinal direction through between the first lateral gas flow passages, each of the third longitudinal gas flow passages having a third gas ejection hole provided on the reaction chamber side.

10. The vapor phase growth apparatus according to claim 9 , further comprising:

a third gas supply passage through which a third process gas different from the first process gas and the second process gas is supplied,

wherein the third gas supply passage is connected to the third lateral gas flow passages.

11. The vapor phase growth apparatus according to claim 10 , wherein the first process gas is hydrogen, the second process gas is ammonia, and the third process gas is a gas containing organic metal.