Mechanisms for removing debris from polishing pad

1. A method for performing a chemical mechanical polishing (CMP) process, comprising:

polishing a wafer by using a polishing pad;

applying a cleaning liquid jet on the polishing pad to condition the polishing pad during the polishing of the wafer; and

applying a second cleaning liquid jet on the polishing pad,

wherein a first acute angle between a main direction of the cleaning liquid jet and a surface of the polishing pad is different from a second acute angle between a main direction of the second cleaning liquid jet and the surface of the polishing pad, and the cleaning liquid jet is closer to a center of the polishing pad than the second cleaning liquid jet, and the first acute angle is smaller than the second acute angle.

2. The method for performing a CMP process as claimed in claim 1 , further comprising increasing a temperature of the cleaning liquid jet, wherein the temperature of the cleaning liquid jet is increased to be in a range from about 30° C. to about 99° C.

3. The method for performing a CMP process as claimed in claim 2 , further comprising controlling the temperature of the cleaning liquid jet by a temperature control assembly.

4. The method for performing a CMP process as claimed in claim 1 , wherein the cleaning liquid jet is pressurized to have a pressure in a range from about 100 hPa to about 300 hPa.

5. The method for performing a CMP process as claimed in claim 1 , wherein the cleaning liquid jet is applied on the polishing pad by using a jet provider.

6. The method for performing a CMP process as claimed in claim 5 , further comprising introducing a gas into the jet provider to pressurize the cleaning liquid jet.

7. The method for performing a CMP process as claimed in claim 6 , wherein the gas is made of N 2 , He, Ne, Ar, air, or combinations thereof.

8. The method for performing a CMP process as claimed in claim 1 , further comprising applying a third cleaning liquid jet on the polishing pad after the wafer is polished by using the polishing pad.

9. The method for performing a CMP process as claimed in claim 1 , further comprising:

removing the wafer from the polishing pad;

applying a third cleaning liquid jet on the polishing pad; and

transferring a second wafer on the polishing pad and polishing the second wafer after the third cleaning liquid jet is applied on the polishing pad.

10. The method for performing a CMP process as claimed in claim 1 , wherein the cleaning liquid jet is made of water.

11. The method for performing a CMP process as claimed in claim 1 , wherein the cleaning liquid jet contains no slurry particle.

12. The method for performing a CMP process as claimed in claim 1 , further comprising rotating the polishing pad during the application of the cleaning liquid jet on the polishing pad.

13. The method for performing a CMP process as claimed in claim 1 , further comprising conditioning the polishing pad by using a conditioning disk, wherein the cleaning liquid jet is applied on the polishing pad during the conditioning of the polishing pad by the conditioning disc.

14. The method for performing a CMP process as claimed in claim 13 , further comprising providing slurry on the polishing pad during the polishing of the wafer, wherein the slurry is provided using a slurry supply, the cleaning liquid jet is applied using a jet assembly, and the slurry supply, the wafer, the conditioning disk, and the jet assembly are sequentially arranged along a spinning direction of the polishing pad.

15. The method for performing a CMP process as claimed in claim 1 , wherein the cleaning jet and the second cleaning jet is provided by a jet provider.

16. The method for performing a CMP process as claimed in claim 1 , wherein the cleaning jet and the second cleaning jet contains no slurry particle.

17. The method for performing a CMP process as claimed in claim 1 , wherein the second cleaning jet is applied on the polishing pad during the polishing of the wafer.

18. A method for performing a chemical mechanical polishing (CMP) process, comprising:

polishing a wafer by using a polishing pad;

providing slurry on the polishing pad during the polishing of the wafer;

applying a cleaning liquid jet on the polishing pad to condition the polishing pad during the polishing of the wafer; and

applying a second cleaning liquid jet on the polishing pad,

wherein a first acute angle between a main direction of the cleaning liquid jet and a surface of the polishing pad is different from a second acute angle between a main direction of the second cleaning liquid jet and the surface of the polishing pad, and the cleaning liquid jet is closer to a center of the polishing pad than the second cleaning liquid jet, and the first acute angle is smaller than the second acute angle.

19. The method for performing a CMP process as claimed in claim 18 , further comprising increasing a temperature of the cleaning liquid jet during the application of the cleaning liquid on the polishing pad.

20. A method for performing a chemical mechanical polishing (CMP) process, comprising:

polishing a wafer by using a polishing pad;

applying a cleaning liquid jet on the polishing pad by using a jet provider to condition the polishing pad during the polishing of the wafer, wherein the cleaning liquid jet contains no slurry particle, and a gas is introduced into the jet provider to pressurize the cleaning liquid jet; and

applying a second cleaning liquid jet on the polishing pad,

wherein a first acute angle between a main direction of the cleaning liquid jet and a surface of the polishing pad is different from a second acute angle between a main direction of the second cleaning liquid jet and the surface of the polishing pad, and the cleaning liquid jet is closer to a center of the polishing pad than the second cleaning liquid jet, and the first acute angle is smaller than the second acute angle.