Plasma processing apparatus and shower plate
A plasma processing apparatus including a processing vessel 10 in which a plasma process is performed and a plasma generation antenna 20 having a shower plate 100 which supplies a first gas and a second gas into the processing vessel 10 , performs the plasma process on a substrate with plasma generated by a surface wave formed on a surface of the shower plate 100 through a supply of a microwave. The shower plate 100 has multiple gas holes 133 configured to supply the first gas into the processing vessel 10 and multiple supply nozzles 160 configured to supply the second gas into the processing vessel 10 , and the supply nozzles 160 are protruded vertically downwards from a bottom surface of the shower plate 100 and are provided at different positions from the gas holes 133.
1. A plasma processing apparatus including a processing vessel in which a plasma process is performed and a plasma generation antenna having a shower plate which supplies a first gas and a second gas into the processing vessel, the plasma processing apparatus performing the plasma process on a substrate with plasma generated by a surface wave formed on a surface of the shower plate through a supply of a microwave,
wherein the shower plate has a plurality of gas holes configured to supply the first gas into the processing vessel and a plurality of supply nozzles configured to supply the second gas into the processing vessel,
the supply nozzles are protruded vertically downwards from a bottom surface of the shower plate and are provided at different positions from the gas holes,
the supply nozzles are configured to pass through a region having an electron temperature higher in the vicinity of the shower plate than in any other region under the vicinity of the shower plate, and
a distance from the bottom surface of the shower plate to a lower end of each supply nozzle is equivalent to about 1/16 to about 3/16 of a wavelength of the supplied microwave.
2. The plasma processing apparatus of claim 1 ,
wherein the second gas is more easily decomposed by the plasma than the first gas.
3. The plasma processing apparatus of claim 2 ,
wherein the second gas is a source gas, and the first gas is a gas for generating the plasma.
4. The plasma processing apparatus of claim 1 ,
wherein a base member protruded downwards is provided at the bottom surface of the shower plate,
recess portions depressed upwards are formed at the base member in a preset pattern, and
the supply nozzles are provided at the recess portions.
5. The plasma processing apparatus of claim 1 ,
wherein the gas holes and the supply nozzles are arranged to be equi-spaced when viewed from a plane.
6. The plasma processing apparatus of claim 1 ,
wherein the supply nozzles are provided at a portion of the shower plate excluding a central portion thereof.
7. The plasma processing apparatus of claim 1 ,
wherein flow rates of the first gas supplied from the gas holes are different for each of the gas holes and/or flow rates of the second gas supplied from the supply nozzles are different for each of the supply nozzles.
8. A shower plate that supplies a first gas and a second gas into a processing vessel of a plasma processing apparatus in which a plasma process is performed, the plasma process being performed on a substrate with plasma generated by a surface wave formed on a surface of the shower plate through a supply of a microwave, the shower plate comprising:
a plurality of gas holes configured to supply the first gas into the processing vessel and a plurality of supply nozzles configured to supply the second gas into the processing vessel,
wherein the supply nozzles are protruded vertically downwards from a bottom surface of the shower plate and are provided at different positions from the gas holes,
the supply nozzles are configured to pass through a region having an electron temperature higher in the vicinity of the shower plate than in any other region under the vicinity of the shower plate, and
a distance from the bottom surface of the shower plate to a lower end of each supply nozzle is equivalent to about 1/16 to about 3/16 of a wavelength of the supplied microwave.