IP Library Granted Patent US 9,666,507
Granted Patent B2
US 9,666,507 · App. 14/556,215 · Granted May 30, 2017

Through-substrate structure and method for fabricating the same

Inventors: Chun-Hung Chen (Tainan, TW); Chien-Li Kuo (Hsinchu, TW); Ming-Tse Lin (Hsinchu, TW)
Assignee: UNITED MICROELECTRONICS CORP.
H01L23/481H01L21/76898H01L23/53238H01L2924/0002
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Quick Facts
Patent No.
US 9,666,507
App. No.
14/556,215
Granted
May 30, 2017
Kind
B2
Abstract

A method for fabricating through-substrate structure is disclosed. The method includes the steps of: providing a substrate; forming a through-substrate hole and a through-substrate trench in the substrate; and forming a metal layer in the through-substrate hole and the through-substrate trench for forming a through-substrate via and a through-substrate conductor having a void therein.

Claims (17)

1. A through-substrate structure, comprising:

a through-substrate conductor extending but not completely through a substrate, wherein the through-substrate conductor comprises a void and the void is substantially vacant and a bottom surface of the through-substrate conductor contacts the substrate directly; and

a through-substrate via completely extending through the substrate.

2. The through-substrate structure of claim 1 , further comprising:

a through-substrate via in the substrate, wherein the through-substrate via is surrounded by the through-substrate conductor under 3-dimensional view of the through-substrate via and the through-substrate conductor, respectively.

3. The through-substrate structure of claim 2 , wherein each of the through-substrate conductor and the through-substrate via comprises sidewall scallops.

4. The through-substrate structure of claim 2 , wherein the through-substrate conductor surrounds the through-substrate via according to a circular shape or rectangular shape.

5. The through-substrate structure of claim 2 , wherein the through-substrate via comprises a seed layer enclosing no void therein.

6. The through-substrate structure of claim 5 , wherein the seed layer comprises copper.

7. A through-substrate structure, comprising:

a through-substrate conductor in a substrate, wherein the through-substrate conductor comprises a seed layer enclosing a void therein and in direct contact with the void and a metal layer on the seed layer, wherein the void is enclosed by the seed layer completely, the seed layer being of a conformal structure made of copper, the metal layer filling a through-substrate hole, a through-substrate trench, but without filling the void.

8. The through-substrate structure of claim 7 , further comprising:

a through-substrate via in the substrate, wherein the through-substrate via is surrounded by the through-substrate conductor.

9. The through-substrate structure of claim 8 , wherein each of the through-substrate conductor and the through-substrate via comprises sidewall scallops.

10. The through-substrate structure of claim 8 , wherein the through-substrate conductor surrounds the through-substrate via according to a circular shape or rectangular shape.

11. The through-substrate structure of claim 8 , wherein the through-substrate via comprises the seed layer enclosing no void therein.

12. The through-substrate structure of claim 11 , wherein the seed layer comprises copper.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 30, 2014
From: CHEN, CHUN-HUNG; KUO, CHIEN-LI; LIN, MING-TSE
To: UNITED MICROELECTRONICS CORP.
Reel/Frame 034282/0390 →
Continuity (1)
Related Publication 20160155685A1 · Jun 2, 2016