Oxide semiconductor film
A highly reliable semiconductor device including an oxide semiconductor is provided. Provided is a semiconductor device including an oxide semiconductor layer, an insulating layer in contact with the oxide semiconductor layer, a gate electrode layer overlapping with the oxide semiconductor layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The oxide semiconductor layer includes a first region having a crystal whose size is less than or equal to 10 nm and a second region which overlaps with the insulating layer with the first region provided therebetween and which includes a crystal part whose c-axis is aligned in a direction parallel to a normal vector of the surface of the oxide semiconductor layer.
1. An oxide semiconductor film comprising a crystalline part,
wherein the crystalline part includes indium, zinc, and a metal element,
wherein the metal element is selected from the group consisting of aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cerium, neodymium, and hafnium,
wherein the crystalline part further includes silicon,
wherein a size of the crystalline part is less than or equal to 10 nm, and
wherein a plurality of circumferentially distributed spots are observed in a measurement area greater than or equal to an area with a diameter of 5 nmφ and less than or equal to an area with a diameter of 10 nmφ in a nanobeam electron diffraction pattern of a cross-section of the oxide semiconductor film.
2. The oxide semiconductor film according to claim 1 , wherein a halo pattern is observed in a selected-area electron diffraction pattern of a plane of the oxide semiconductor film.
3. The oxide semiconductor film according to claim 1 ,
wherein, when zinc and oxygen are eliminated from consideration, a proportion of indium is greater than or equal to 25 atomic % and a proportion of the metal element is less than 75 atomic %.
4. The oxide semiconductor film according to claim 1 , wherein a size of the crystalline part is less than or equal to 5 nm.
5. The oxide semiconductor film according to claim 1 , further comprising an amorphous part.
6. The oxide semiconductor film according to claim 1 ,
wherein the oxide semiconductor film comprises a first region including the crystalline part, and
where the oxide semiconductor film further comprises a second region having a crystalline part whose c-axis is aligned in a direction parallel to a normal vector of a surface of the oxide semiconductor film.
7. An oxide semiconductor film comprising a crystalline part,
wherein the crystalline part includes indium, zinc, and a metal element,
wherein the metal element is selected from the group consisting of aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cerium, neodymium, and hafnium,
wherein the crystalline part further includes silicon,
wherein concentration of silicon is lower than or equal to 3×10 18 /cm 3 ,
wherein a size of the crystalline part is less than or equal to 10 nm, and
wherein a plurality of circumferentially distributed spots are observed in a measurement area greater than or equal to an area with a diameter of 5 nmφ and less than or equal to an area with a diameter of 10nmφ in a nanobeam electron diffraction pattern of a cross-section of the oxide semiconductor film.
8. The oxide semiconductor film according to claim 7 , wherein a halo pattern is observed in a selected-area electron diffraction pattern of a plane of the oxide semiconductor film.
9. The oxide semiconductor film according to claim 7 ,
wherein, when zinc and oxygen are eliminated from consideration, a proportion of indium is greater than or equal to 25 atomic % and a proportion of the metal element is less than 75 atomic %.
10. The oxide semiconductor film according to claim 7 , wherein a size of the crystalline part is less than or equal to 5 nm.
11. The oxide semiconductor film according to claim 7 , further comprising an amorphous part.
12. The oxide semiconductor film according to claim 7 ,
wherein the oxide semiconductor film comprises a first region including the crystalline part, and
where the oxide semiconductor film further comprises a second region having a crystalline part whose c-axis is aligned in a direction parallel to a normal vector of a surface of the oxide semiconductor film.
13. The oxide semiconductor film according to claim 7 , wherein the concentration of silicon is measured by secondary ion mass spectrometry.
14. An oxide semiconductor film comprising a crystalline part,
wherein the crystalline part includes indium, zinc, and a metal element,
wherein the metal element is selected from the group consisting of aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cerium, neodymium, and hafnium,
wherein the crystalline part further includes silicon, and
wherein a plurality of circumferentially distributed spots are observed in a measurement area greater than or equal to an area with a diameter of 5 nmφ and less than or equal to an area with a diameter of 10 nmφin a nanobeam electron diffraction pattern of a cross-section of the oxide semiconductor film.
15. The oxide semiconductor film according to claim 14 , wherein a halo pattern is observed in a selected-area electron diffraction pattern of a plane of the oxide semiconductor film.
16. The oxide semiconductor film according to claim 14 , wherein, when zinc and oxygen are eliminated from consideration, a proportion of indium is greater than or equal to 25 atomic % and a proportion of the metal element is less than 75 atomic %.
17. The oxide semiconductor film according to claim 14 , wherein a size of the crystalline part is less than or equal to 5 nm.
18. The oxide semiconductor film according to claim 14 , further comprising an amorphous part.
19. The oxide semiconductor film according to claim 14 ,
wherein the oxide semiconductor film comprises a first region including the crystalline part, and
where the oxide semiconductor film further comprises a second region having a crystalline part whose c-axis is aligned in a direction parallel to a normal vector of a surface of the oxide semiconductor film.