Indium cylindrical sputtering target and manufacturing method thereof
View Patent ↗Provided are an indium cylindrical sputtering target capable of providing good film thickness distribution and a method for production thereof. The indium cylindrical target comprises crystal grains whose average size is 1 mm to 20 mm over its surface to be sputtered. The method for manufacturing the indium cylindrical target includes the steps of: casting a semi-finished product of an indium cylindrical target integrated with a backing tube; and subjecting the semi-finished product to plastic working in its radial direction, wherein the plastic working is performed with a total thickness reduction rate of at least 10% over its longitudinal direction.
1. An indium cylindrical target comprising crystal grains whose average size is 1 mm to 20 mm over its surface to be sputtered, wherein the indium cylindrical target comprises crystal grains with a straight-line grain boundary on its surface to be sputtered, wherein the straight-line grain boundary has a protrusion of grain boundary from a line segment defined by a straight line drawn between adjacent corners of a crystal grain and has an at least 50 μm long straight-line region, the protrusion being less than 0.1 mm in a direction of a normal to the line segment.
2. The indium cylindrical target according to claim 1 , wherein the standard deviation of average crystal grain sizes measured at positions separated by 90° along its circumference is 6 mm or less at each of its central portion, its one end portion and its another end portion in a longitudinal direction.
3. The indium cylindrical target according to claim 1 , wherein at least part of the straight-line grain boundary is a coincidence boundary.
4. The indium cylindrical target according to claim 3 , wherein the coincidence boundary has a Σ value of 7.
5. The indium cylindrical target according to claim 1 , wherein an area proportion of the crystal grains with a straight-line grain boundary is at least 5%.
6. The indium cylindrical target according to claim 1 , wherein the standard deviation of average crystal grain size is 6 mm or less over its surface to be sputtered.
7. The indium cylindrical target according to claim 1 , wherein the standard deviation of average crystal grain sizes at three places including a central portion, one end portion and another end portion in a longitudinal direction is 0.9 mm or less.
8. A method for manufacturing the indium cylindrical target according to claim 1 , comprising the steps of: casting a semi-finished product of an indium cylindrical target integrated with a backing tube; and subjecting the semi-finished product to plastic working in its radial direction, wherein the plastic working is performed with a total thickness reduction rate of at least 10% over a longitudinal direction of the semi-finished product.
9. The method according to claim 8 , wherein the total thickness reduction rate is 50% or less.
10. The method according to claim 8 , wherein the plastic working is performed in such a manner that the standard deviation of thickness reduction rates along a circumference direction of the semi-finished product of the indium cylindrical target is 5 or less.
11. The method according to claim 8 , wherein the plastic working is performed using at least one method selected from the group consisting of rolling, extruding and pressing.
12. The method according to claim 8 , wherein the plastic working is performed while a shaft is inserted in the backing tube.