Semiconductor device with floating field plates
A semiconductor device with a current terminal region located in a device active area of a substrate of the device. A guard region is located in a termination area of the device. A plurality of floating field plates are located in the termination area and are ohmically coupled to the guard region. The floating field plates and guard region act in some embodiments to “smooth” the electrical field distribution along the termination area.
1. A semiconductor device comprising:
a substrate including a device active area and a termination area;
a current terminal region, the current terminal region located in the device active area of the substrate and having a net conductivity doping profile of a first type and of a first concentration;
an insulator structure located at least partially in the termination area of the substrate, at least a portion of the insulator structure located in the substrate;
wherein the termination area includes semiconductor material having a net conductivity doping profile of the first type and at a second concentration that is less than the first concentration;
a guard structure, the guard structure including:
a guard region located in the termination area of the substrate between the current terminal region and the insulator structure, wherein the guard region has a net conductivity doping profile of a second type opposite the first type, wherein the semiconductor material having a net conductivity doping profile of the first type is located between the guard region and the insulator structure and between the guard region and the current terminal region;
a first floating field plate located over the termination area of the substrate at a first level, the first floating field plate being ohmically coupled to the guard region;
a second floating field plate located over the termination area of the substrate at a second level above the first level, the second floating field plate being ohmically coupled to the guard region, at least a portion of the second floating field plate vertically overlaps at least a portion of the first floating field plate;
where in the semiconductor device includes a laterally diffused MOSFET and the current terminal region is characterized as a drain region.
2. The semiconductor device of claim 1 , wherein the substrate includes a first layer of semiconductor material having net conductivity doping profile of the second type located in the termination area, the semiconductor material having a net conductivity doping profile of the first type is located over the first layer.
3. The semiconductor device of claim 2 wherein the first layer is characterized as epitaxial grown semiconductor material.
4. The semiconductor device of claim 2 wherein the guard region is located in the semiconductor material having a net conductivity doping profile of the first type, the guard region is separated vertically from the first layer by the semiconductor material having a net conductivity doping profile of the first type.
5. The semiconductor device of claim 2 wherein the first layer extends below the current terminal region.
6. The semiconductor device of claim 1 further comprising:
a current terminal electrode, the current terminal electrode electrically coupled to the current terminal region, the current terminal electrode located at a first metal level above the substrate, wherein the second floating field plate is located at the first metal level.
7. The semiconductor device of claim 1 further comprising:
a current terminal electrode, the current terminal electrode electrically coupled to the current terminal region, the current terminal electrode located at a first metal level above the substrate, wherein the first floating field plate and the second floating field plate are each located at a level below the first metal level.
8. The semiconductor device of claim 1 wherein the guard region is located between the insulator structure and the current terminal region in a first direction, the current terminal region has a width in a second direction that is transverse to the first direction, wherein the guard region has a greater width in the second direction than a width of the current terminal region.
9. The semiconductor device of claim 1 wherein the second floating field plate extends over the substrate closer to an area of the current terminal region than the first floating field plate.
10. The semiconductor device of claim 1 wherein the second floating field plate includes a portion located directly over the semiconductor material having a net conductivity doping profile of the first type located between the guard region and the current terminal region.
11. The semiconductor device of claim 10 wherein the first floating field plate includes a portion located directly over the semiconductor material having a net conductivity doping profile of the first type located between the guard region and the current terminal region.
12. A semiconductor device comprising:
a substrate including a device active area and a termination area;
a current terminal region, the current terminal region located in the device active area of the substrate and having a net conductivity doping profile of a first type and of a first concentration;
an insulator structure located at least partially in the termination area of the substrate, at least a portion of the insulator structure located in the substrate;
wherein the termination area includes semiconductor material having a net conductivity doping profile of the first type and at a second concentration that is less than the first concentration;
a guard structure, the guard structure including:
a guard region located in the termination area of the substrate between the current terminal region and the insulator structure, wherein the guard region has a net conductivity doping profile of a second type opposite the first type, wherein the semiconductor material having a net conductivity doping profile of the first type is located between the guard region and the insulator structure and between the guard region and the current terminal region;
a first floating field plate located over the termination area of the substrate at a first level, the first floating field plate being ohmically coupled to the guard region;
a second floating field plate located over the termination area of the substrate at a second level above the first level, the second floating field plate being ohmically coupled to the guard region, at least a portion of the second floating field plate vertically overlaps at least a portion of the first floating field plate;
a third field plate located at least over the insulator structure, the third field plate electrically coupled to a ground terminal, the third field plate being at a same level as one of the first floating field plate or the second floating field plate.
13. A semiconductor device comprising:
a substrate including a device active area and a termination area;
a current terminal region, the current terminal region located in the device active area of the substrate and having a net conductivity doping profile of a first type and of a first concentration;
an insulator structure located at least partially in the termination area of the substrate, at least a portion of the insulator structure located in the substrate;
wherein the termination area includes semiconductor material having a net conductivity doping profile of the first type and at a second concentration that is less than the first concentration;
a guard structure, the guard structure including:
a guard region located in the termination area of the substrate between the current terminal region and the insulator structure, wherein the guard region has a net conductivity doping profile of a second type opposite the first type, wherein the semiconductor material having a net conductivity doping profile of the first type is located between the guard region and the insulator structure and between the guard region and the current terminal region;
a first floating field plate located over the termination area of the substrate at a first level, the first floating field plate being ohmically coupled to the guard region;
a second floating field plate located over the termination area of the substrate at a second level above the first level, the second floating field plate being ohmically coupled to the guard region, at least a portion of the second floating field plate vertically overlaps at least a portion of the first floating field plate;
a second guard structure, the second guard structure including:
a second guard region located in the termination area between the guard region and the insulator structure, wherein the second guard region has a net conductivity doping profile of the second type, wherein the semiconductor material having a net conductivity doping profile of the first type is located between the second guard region and the insulator structure and between the guard region and the second guard region;
a third floating field plate located above the termination area of the substrate at the first level, the third floating field plate being ohmically coupled to the second guard region;
a fourth floating field plate located over the termination area of the substrate at the second level above the first level, the fourth floating field plate being ohmically coupled to the second guard region, at least a portion of the fourth floating field plate overlaps the third floating field plate.
14. The semiconductor device of claim 13 wherein the guard region and the second guard region are located between the insulator structure and the current terminal region in a first direction, a second direction is transverse to the first direction, wherein the second guard region has a greater width in the second direction than the guard region.
15. A semiconductor device comprising:
a substrate including a device active area and a termination area;
a current terminal region, the current terminal region located in the device active area of the substrate and having a net conductivity doping profile of a first type and of a first concentration;
an insulator structure located at least partially in the termination area of the substrate, at least a portion of the insulator structure located in the substrate;
wherein the termination area includes semiconductor material having a net conductivity doping profile of the first type and at a second concentration that is less than the first concentration;
a guard structure, the guard structure including:
a guard region located in the termination area of the substrate between the current terminal region and the insulator structure, wherein the guard region has a net conductivity doping profile of a second type opposite the first type, wherein the semiconductor material having a net conductivity doping profile of the first type is located between the guard region and the insulator structure and between the guard region and the current terminal region;
a first floating field plate located over the termination area of the substrate at a first level, the first floating field plate being ohmically coupled to the guard region;
a second floating field plate located over the termination area of the substrate at a second level above the first level, the second floating field plate being ohmically coupled to the guard region, at least a portion of the second floating field plate vertically overlaps at least a portion of the first floating field plate;
wherein the current terminal region is characterized as a drain region of a transistor.
16. A semiconductor device comprising:
a substrate including a device active area and a termination area;
a current terminal region, the current terminal region located in the device active area of the substrate and having a net conductivity doping profile of a first type and of a first concentration;
an insulator structure located at least partially in the termination area of the substrate, at least a portion of the insulator structure located in the substrate;
wherein the termination area includes semiconductor material having a net conductivity doping profile of the first type and at a second concentration that is less than the first concentration;
a guard structure, the guard structure including:
a guard region located in the termination area of the substrate between the current terminal region and the insulator structure, wherein the guard region has a net conductivity doping profile of a second type opposite the first type, wherein the semiconductor material having a net conductivity doping profile of the first type is located between the guard region and the insulator structure and between the guard region and the current terminal region;
a first floating field plate located over the termination area of the substrate at a first level, the first floating field plate being ohmically coupled to the guard region;
a second floating field plate located over the termination area of the substrate at a second level above the first level, the second floating field plate being ohmically coupled to the guard region, at least a portion of the second floating field plate vertically overlaps at least a portion of the first floating field plate;
wherein the current terminal region includes a finger-like portion having a distal end, wherein the guard region is located between the distal end of the current terminal region and the insulator structure.
17. The semiconductor device of claim 16 where in the semiconductor device includes a laterally diffused MOSFET and the current terminal region is characterized as a drain region.
18. A semiconductor device comprising:
a substrate including a device active area and a termination area;
a current terminal region located in the device active area of the substrate and having a net conductivity doping profile of a first type;
a guard structure in the termination area, the guard structure including:
a guard region located in the termination area of the substrate between the current terminal region and an area of a periphery of the termination area, wherein the guard region has a net conductivity doping profile of a second type opposite the first type, wherein semiconductor material having a net conductivity doping profile of the first type is located between the guard region and the area of the periphery of the termination area and between the guard region and the current terminal region;
a first floating field plate located over the termination area of the substrate at a first level, the first floating field plate being ohmically coupled to the guard region;
a second floating field plate located over the termination area of the substrate at a second level above the first level, the second floating field plate being ohmically coupled to the guard region, at least a portion of the second floating field plate vertically overlaps at least a portion of the first floating field plate;
wherein the first floating field plate includes a portion located directly over the semiconductor material having a net conductivity doping profile of the first type located between the guard region and the current terminal region.
19. The semiconductor device of claim 18 wherein the second floating field plate extends over the substrate closer to an area of the current terminal region than the first floating field plate.
20. The semiconductor device of claim 18 wherein the semiconductor material having a net conductivity doping profile of the first type is located over a first layer of semiconductor material having a net conductivity doping profile of the second type.
21. The semiconductor device of claim 18 wherein the current terminal region is characterized as a drain region of a transistor.