Light-emitting device, electronic equipment, and process of producing light-emitting device
A light-emitting device includes a light-reflecting layer, a first electrode disposed on or above the light-reflecting layer, a semi-transparent reflective second electrode, a light-emitting function layer disposed between the first electrode and the second electrode, and an electron-injection layer disposed between the light-emitting function layer and the second electrode. The second electrode is made of an Ag alloy having an Ag content of from 50% by atoms to 98% by atoms.
1. A method for manufacturing a light-emitting device, the method comprising:
forming a light-reflecting layer disposed above a substrate;
forming a first electrode disposed on or above the light-reflecting layer;
forming a light-emitting function layer disposed on or above the first electrode;
forming an electron-injection layer disposed on the light-emitting function layer; and
forming a second electrode on the electron-injection layer,
wherein the forming the second electrode is performed by co-depositing Mg and Ag at a deposition rate ratio of Mg to Ag in the range of 1:20 to 1:50.
2. A method for manufacturing a light-emitting device according to claim 1 , wherein the second electrode has a thickness in a range 10 nm to 30 nm.
3. A method for manufacturing a light-emitting device according to claim 1 , wherein the electron-injection layer is made of LiF.