Substrate bonding apparatus and substrate bonding method

1. A substrate bonding apparatus, comprising:

a vacuum chamber;

a surface activation part for irradiating two bonding surfaces of two substrates with a particle beam to thereby activate said two bonding surfaces and irradiating at least one bonding surface with silicon particles in parallel with irradiation with said particle beam in said vacuum chamber; and

a substrate moving mechanism for bringing said two bonding surfaces into contact with each other, to thereby bond said two substrates.

2. The substrate bonding apparatus according to claim 1 , wherein

said surface activation part includes a fast atom beam source or an ion beam source as a particle beam source, wherein a discharge chamber of said particle beam source has an emission hole, and at least part of an inner surface of said discharge chamber of said particle beam source is formed of silicon or contains silicon.

3. The substrate bonding apparatus according to claim 2 , wherein

a portion of said discharge chamber, which faces said emission hole, is formed of silicon or contains silicon.

4. The substrate bonding apparatus according to claim 3 , wherein

a hole surface of said emission hole is formed of silicon or contains silicon.

5. The substrate bonding apparatus according to claim 3 , wherein

an inner side of a member forming said emission hole is formed of densified carbon.

6. The substrate bonding apparatus according to claim 2 , wherein

said discharge chamber comprises:

a chamber body formed of a material having an ionization rate higher than that of silicon; and

a silicon member or a member containing silicon, which is bonded on an inner surface of said chamber body.

7. The substrate bonding apparatus according to claim 2 , wherein

at least part of an inner surface of said discharge chamber is formed of densified carbon.

8. The substrate bonding apparatus according to claim 2 , wherein

at least part of an inner surface of said discharge chamber is formed of a metal containing at least one of titanium, tantalum, and molybdenum.

9. The substrate bonding apparatus according to claim 1 , further comprising a beam source moving mechanism, wherein

said surface activation part is a fast atom beam source comprising:

a discharge chamber having an emission hole at each of upper and lower portions thereof; and

a positive electrode disposed in said discharge chamber,

said two bonding surfaces of said two substrates face each other in said vacuum chamber, and

said beam source moving mechanism moves said fast atom beam source in parallel with said two bonding surfaces between said two bonding surfaces.

10. The substrate bonding apparatus according to claim 9 , wherein

at least part of an inner surface of said discharge chamber is formed of a metal containing at least one of titanium, tantalum, and molybdenum.

11. The substrate bonding apparatus according to claim 9 , wherein

at least part of an inner surface of said discharge chamber is formed of densified carbon.

12. The substrate bonding apparatus according to claim 9 , wherein

a member including said emission hole is formed of silicon or a material containing silicon.

13. The substrate bonding apparatus according to claim 12 , wherein

a hole surface of said emission hole is formed of silicon or contains silicon.

14. The substrate bonding apparatus according to claim 12 , wherein

an inner side of a member forming said emission hole is formed of densified carbon.

15. The substrate bonding apparatus according to claim 1 , wherein

said surface activation part irradiates a silicon member together with said at least one bonding surface, with said particle beam.

16. The substrate bonding apparatus according to claim 1 , further comprising:

a hydrophilization part for performing a hydrophilization treatment on said two bonding surfaces after a treatment by said surface activation part.

17. A substrate bonding method, comprising:

a) irradiating two bonding surfaces of two substrates with a particle beam to thereby activate said two bonding surfaces and irradiating at least one bonding surface with silicon particles in parallel with irradiation with said particle beam in a vacuum chamber; and

b) bringing said two bonding surfaces into contact with each other, to thereby bond said two substrates.

18. The substrate bonding method according to claim 17 , wherein

a silicon member together with said at least one bonding surface is irradiated with said particle beam in said operation a).

19. The substrate bonding method according to claim 17 , further comprising:

performing a hydrophilization treatment on said two bonding surfaces after said operation a) and before said operation b).

20. The substrate bonding method according to claim 17 ,

wherein bonding is performed at a degree of vacuum nearer to the atmospheric pressure than 3E−6 Pa in said operation b).

21. The substrate bonding method according to claim 17 , wherein

said two bonding surfaces of two substrates, which face each other, are irradiated with particle beams at the same time by moving a fast atom beam source having an emission hole at each of two portions of a discharge chamber thereof, which face said bonding surfaces, respectively, in parallel with the two bonding surfaces between said two substrates in said vacuum chamber in said step a).

22. The substrate bonding method according to claim 21 , wherein

at least part of an inner surface of said discharge chamber is formed of a metal containing at least one of titanium, tantalum, and molybdenum.

23. The substrate bonding method according to claim 21 , wherein

a member including said emission hole is formed of silicon or a material containing silicon.

24. The substrate bonding method according to claim 23 , wherein

a hole surface of said emission hole is formed of silicon or contains silicon.

25. The substrate bonding method according to claim 23 , wherein

an inner side of a member forming said emission hole is formed of densified carbon.