On-die termination control without a dedicated pin in a multi-rank system
A memory subsystem includes a multi-device package including multiple memory devices organized as multiple ranks of memory. A control unit for the memory subsystem sends a memory access command concurrently to some or all of the ranks of memory, and triggers some of all of the memory ranks that receive the memory access command to change on-die termination (ODT) settings. One of the ranks is selected to execute the memory access command, and executes the command while all ranks triggered to change the ODT setting have the changed ODT setting.
1. A dynamic random access memory (DRAM) device comprising:
input/output interface hardware to receive a memory access command followed by a CAS-2 (column address selection) command;
on-die termination (ODT) circuitry to selectively apply termination to a data signal line; and
a register to store an ODT setting to indicate a termination impedance for non-target termination;
wherein the DRAM device is to apply the termination impedance for non-target termination to the data signal line in response to receipt of a non-target CAS-2 command.
2. The memory device of claim 1 , wherein the memory access command comprises a Read command.
3. The memory device of claim 2 , wherein the memory access command comprises a Read-1 command.
4. The memory device of claim 1 , wherein the memory access command comprises a Write command.
5. The memory device of claim 4 , wherein the memory access command comprises a Write-1 command.
6. The memory device of claim 1 , wherein the memory access command comprises a two-cycle command and the non-target CAS-2 command comprises a two-cycle command.
7. The memory device of claim 6 , wherein a chip select (CS) signal is asserted on a first cycle of the memory access command, and wherein the CS signal is not asserted on a first cycle of the non-target CAS-2 command.
8. The memory device of claim 1 , wherein the register comprises a mode register to control the non-target ODT termination impedance.
9. The memory device of claim 8 , wherein the input/output interface hardware is to receive a mode register set (MRS) command to set the ODT setting in the register.
10. The memory device of claim 9 , wherein the input/output interface hardware is to receive the MRS command after the non-target CAS-2 command to change the ODT setting for a subsequent memory access.
11. The memory device of claim 1 , wherein the DRAM device comprises a DRAM device of a multi-rank system, wherein the DRAM device is to receive a non-target CAS-2 command if the DRAM device is part of a non-target rank.
12. The memory device of claim 1 , wherein the DRAM device comprises a device compatible with a double data rate version 4 (LPDDR4) standard.
13. The memory device of claim 1 , wherein the DRAM is to apply the ODT setting selectively based on the non-target CAS-2 command instead of based on a state of an ODT control pin.
14. A method for termination in a dynamic random access memory (DRAM) device, comprising:
receiving a memory access command followed by a CAS-2 (column address selection) command;
determining from a register an on-die termination (ODT) setting that indicates a termination impedance for non-target termination; and
selectively applying to a data signal line the non-target termination impedance with ODT circuitry in response to receiving a non-target CAS-2 command.
15. The method of claim 14 , wherein the memory access command comprises a Read command.
16. The method of claim 14 , wherein the memory access command comprises a Write command.
17. The method of claim 14 , wherein the memory access command comprises a two-cycle command and the non-target CAS-2 command comprises a two-cycle command, wherein a chip select (CS) signal is asserted on a first cycle of the memory access command, and wherein the CS signal is not asserted on a first cycle of the non-target CAS-2 command.
18. The method of claim 14 , wherein the register comprises a mode register to control the non-target ODT termination impedance, and further comprising receiving a mode register set (MRS) command to set the ODT setting in the register.
19. The method of claim 14 , wherein the DRAM device comprises a DRAM device of a multi-rank system, wherein the DRAM device is to receive a non-target CAS-2 command if the DRAM device is part of a non-target rank.
20. The method of claim 14 , wherein the DRAM device comprises a device compatible with a double data rate version 4 (LPDDR4) standard.
21. An apparatus for input/output termination, comprising:
means for receiving a memory access command followed by a CAS-2 (column address selection command;
means for determining from a register an on-die termination (ODT) setting that indicates a termination impedance for non-target termination; and
means for selectively applying to a data signal line the non-target termination impedance with ODT circuitry in response to receiving a non-target CAS-2 command.
22. The apparatus of claim 21 , wherein the memory access command comprises a Read command.
23. The apparatus of claim 21 , wherein the memory access command comprises a Write command.
24. The apparatus of claim 21 , wherein the memory access command comprises a two-cycle command and the non-target CAS-2 command comprises a two-cycle command, wherein a chip select (CS) signal is asserted on a first cycle of the memory access command, and wherein the CS signal is not asserted on a first cycle of the non-target CAS-2 command.
25. The apparatus of claim 21 , wherein the register comprises a mode register to control the non-target ODT termination impedance, and further comprising receiving a mode register set (MRS) command to set the ODT setting in the register.
26. The apparatus of claim 21 , wherein the DRAM device comprises a DRAM device of a multi-rank system, wherein the DRAM device is to receive a non-target CAS-2 command if the DRAM device is part of a non-target rank.
27. The apparatus of claim 21 , wherein the DRAM device comprises a device compatible with a double data rate version 4 (LPDDR4) standard.