Chip package and method for fabricating the same

1. A chip package, comprising: a packaging substrate; a chip; and a plurality of solder balls disposed between the packaging substrate and the chip so as to bond the chip onto the packaging substrate, wherein each of the solder balls has outwardly convex cross-sectional sidewalls, wherein the solder balls have a first size, a second size, and a third size which are different from one another, wherein relative to the solder balls of the first size, the solder balls of the second size are disposed adjacent to a corner of the chip, wherein the solder balls of the third size are disposed adjacent to an outermost edge of the chip, wherein the sizes of the solder balls of the first size and the solder balls of the second size have a relationship to a warpage degree and a warpage direction of the chip which are calculated by measurement of circuit distributions on a surface of the chip, wherein a cross-sectional width of the solder balls of the first size is larger than a cross-sectional width of the solder balls of the second size, and the cross-sectional width of the solder balls of the second size is larger than a cross-sectional width of the solder balls of the third size, wherein all of the plurality of solder balls have substantially the same height, wherein the solder balls of the first size electrically connect the chip to the packaging substrate, and wherein the solder balls of the second size and the solder balls of the third size function as support for stress compensation or heat conduction and do not electrically connect to functional circuits of the chip.

2. The chip package as claimed in claim 1 , wherein the relationship is a positive relationship or a negative relationship to the warpage degree and the warpage direction of the chip.

3. The chip package as claimed in claim 1 , wherein a spacing between the solder balls of the first size is different from a spacing between the solder balls of the second size.

4. The chip package as claimed in claim 1 , wherein a spacing between the solder balls of the first size is different from a spacing between the solder balls of the first size and the solder balls of the second size.

5. The chip package as claimed in claim 1 , wherein the chip is formed by dicing a semiconductor substrate, and the semiconductor substrate comprises a silicon wafer, a silicon-germanium wafer, or a gallium arsenide wafer.

6. The chip package as claimed in claim 1 , wherein the surface of the chip is a substantially flat surface.

7. The chip package as claimed in claim 1 , wherein the solder balls of the third size are disposed furthest away from a center of the chip.

8. The chip package as claimed in claim 1 , wherein the solder balls of the third size are disposed at the corner of the chip.

9. A method for fabricating the chip package of claim 1 , comprising: forming a plurality of chips on a wafer; measuring a distribution of a circuit of the chips on the wafer; disposing a plurality of solder balls on the chips on the wafer, wherein each of the solder balls has outwardly convex cross-sectional sidewalls, wherein the solder balls on each chip have a first size, a second size, and a third size which are different from one another, wherein relative to the solder balls of the first size, the solder balls of the second size are disposed adjacent to a corner of the chip, wherein the solder balls of the third size are disposed adjacent to an outermost edge of the chip, wherein the sizes of the solder balls of the first size and the solder balls of the second size have a relationship to a warpage degree and a warpage direction of the chip which are calculated by measurement of circuit distributions on a surface of the chips, wherein a cross-sectional width of the solder balls of the first size is larger than a cross-sectional width of the solder balls of the second size, and the cross-sectional width of the solder balls of the second size is larger than a cross-sectional width of the solder balls of the third size, and the solder balls of the first size and the solder balls of the second size are arranged according to the measurement result; bonding the wafer onto a packaging substrate; dicing the wafer to form a plurality of chip packages; and after forming the chip packages, performing a reflow process to the solder balls, wherein all of the plurality of solder balls have substantially the same height, wherein the solder balls of the first size electrically connect the chip to the packaging substrate, and wherein the solder balls of the second size and the solder balls of the third size function as support for stress compensation or heat conduction and do not electrically connect to functional circuits of the chip.

10. The method for fabricating a chip package as claimed in claim 9 , wherein the relationship is a positive relationship or a negative relationship to the warpage degree and the warpage direction of the chip.

11. The method for fabricating a chip package as claimed in claim 9 , wherein after the reflow process, the solder balls of the first size are wider and shorter than the unreflowed solder balls of the first size, and the solder balls of the second size are taller and more slender than the unreflowed solder balls of the second size.

12. The method for fabricating a chip package as claimed in claim 9 , wherein after the reflow process, the solder balls of the first size are taller and more slender than the unreflowed solder balls of the first size, and the solder balls of the second size are wider and shorter than the unreflowed solder balls of the second size.

13. The method for fabricating a chip package as claimed in claim 9 , wherein a spacing between the solder balls of the first size is different from a spacing between the solder balls of the second size, and a spacing between the solder balls of the first size is different from a spacing between the solder balls of the first size and the solder balls of the second size.

14. A method for fabricating the chip package of claim 1 , comprising: forming a plurality of chips on a wafer; measuring a distribution of circuits of the chips on the wafer; dicing the wafer into a plurality of separated chips; disposing a plurality of solder balls on the separated chips, wherein each of the solder balls has outwardly convex cross-sectional sidewalls, wherein the solder balls on each chip have a first size, a second size, and a third size which are different from one another, wherein relative to the solder balls of the first size, the solder balls of the second size are disposed adjacent to a corner of the chip, wherein the solder balls of the third size are disposed adjacent to an outermost edge of the chip, wherein the sizes of the solder balls of the first size and the solder balls of the second size have a relationship to a warpage degree and a warpage direction of the chip which are calculated by measurement of circuit distributions on a surface of the chip, wherein a cross-sectional width of the solder balls of the first size is larger than a cross-sectional width of the solder balls of the second size, and the cross-sectional width of the solder balls of the second size is larger than a cross-sectional width of the solder balls of the third size, and the solder balls of the first size and the solder balls of the second size are arranged according to the measurement result; bonding the separated chips onto corresponding packaging substrates respectively to form a plurality of chip packages; and after forming the chip packages, performing a reflow process to the solder balls, wherein all of the plurality of solder balls have substantially the same height, wherein the solder balls of the first size electrically connect the chip to the packaging substrate, and wherein the solder balls of the second size and the solder balls of the third size function as support for stress compensation or heat conduction and do not electrically connect to functional circuits of the chip.

15. The method for fabricating a chip package as claimed in claim 14 , wherein the relationship is a positive relationship or a negative relationship to the warpage degree and the warpage direction of the chips.

16. The method for fabricating a chip package as claimed in claim 14 , wherein after the reflow process, the solder balls of the first size are wider and shorter than the unreflowed solder balls of the first size, and the solder balls of the second size are taller and more slender than the unreflowed solder balls of the second size.

17. The method for fabricating a chip package as claimed in claim 14 , wherein after the reflow process, the solder balls of the first size are taller and more slender than the unreflowed solder balls of the first size, and the solder balls of the second size are wider and shorter than the unreflowed solder balls of the second size.

18. The method for fabricating a chip package as claimed in claim 14 , wherein a spacing between the solder balls of the first size is different from a spacing between the solder balls of the second size, and a spacing between the solder balls of the first size is different from a spacing between the solder balls of the first size and the solder balls of the second size.