Trench liner for removing impurities in a non-copper trench
The present disclosure involves a method of fabricating a semiconductor device in a semiconductor technology node that is 5-nanometer or smaller. An opening is formed that extends through a plurality of layers over a substrate. A barrier layer is formed on surfaces of the opening. A liner layer is formed over the barrier layer in the opening. The barrier layer and the liner layer have different material compositions. The opening is filled with a non-copper metal material. The non-copper material is formed over the liner layer. In some embodiments, the non-copper metal material includes cobalt.
1. A method of fabricating a semiconductor device, comprising:
forming an opening that extends through a plurality of layers over a substrate;
forming a liner layer in the opening; and
depositing a metal material in the opening, wherein the metal material contains an impurity, and wherein the impurity is transformed into a gaseous product through a chemical reaction in which the liner layer serves as a catalyst.
2. The method of claim 1 , wherein the depositing comprises depositing a metal material that is free of copper.
3. The method of claim 2 , wherein the depositing comprises depositing cobalt or rhodium as the metal material.
4. The method of claim 1 , wherein the depositing comprises a chemical vapor deposition (CVD) process.
5. The method of claim 1 , wherein the depositing comprises an electrochemical plating (ECP) process.
6. The method of claim 1 , wherein the depositing is performed such that the metal material is in direct physical contact with the liner layer.
7. The method of claim 1 , wherein the impurity includes a ligand material.
8. The method of claim 1 , wherein the chemical reaction comprises a hydroformylation catalysis.
9. The method of claim 1 , wherein the gaseous product includes aldehydes.
10. The method of claim 1 , further comprising: removing the gaseous product via a vacuum pump.
11. The method of claim 1 , wherein a void is left in the deposited metal material, and wherein the method further comprises: performing an annealing process to remove the void.
12. The method of claim 1 , further comprising: forming a barrier layer in the opening before the forming of the liner layer, and wherein the liner layer is formed over the barrier layer.
13. A method of fabricating a semiconductor device, comprising:
forming a trench that extends through one or more layers that are formed over a substrate;
forming a barrier layer in the trench;
forming a liner layer over the barrier layer; and
depositing a non-copper metal material on the liner layer, wherein the non-copper metal material contains a ligand impurity, and wherein the ligand impurity is transformed into a removable product at least in part through a hydroformylation catalysis process in which the liner layer serves as a catalyst.
14. The method of claim 13 , wherein the depositing comprises depositing cobalt or rhodium as the non-copper metal material.
15. The method of claim 13 , wherein the depositing comprises a chemical vapor deposition (CVD) process.
16. The method of claim 13 , wherein the depositing comprises an electrochemical plating (ECP) process.
17. The method of claim 13 , wherein the removable product has a gaseous form.
18. The method of claim 13 , further comprising:
removing the removable product; and
performing an annealing process to remove any voids or gaps in the deposited non-copper metal material.
19. A method of fabricating a semiconductor device, comprising:
forming a trench that extends through one or more layers that are formed over a substrate;
forming a barrier layer in the trench;
forming a liner layer over the barrier layer;
depositing a non-copper metal material on the liner layer, wherein the non-copper metal material contains a ligand impurity, and wherein the ligand impurity is transformed into an aldehyde-containing material through a chemical reaction in which the liner layer serves as a catalyst; and
removing the aldehyde-containing material.
20. The method of claim 19 , wherein the depositing comprises depositing cobalt or rhodium as the non-copper metal material.