Non-volatile semiconductor storage device
According to one embodiment, there is provided a non-volatile semiconductor storage device including a non-volatile memory, a monitoring section, a determining section, and a notification processing section. The non-volatile memory includes a plurality of memory cells driven by word lines and a voltage generating section that generates a read voltage to be applied to the word lines. The monitoring section monitors a change in a threshold distribution of the plurality of memory cells upon performing a read processing to read data from the plurality of memory cells by applying the read voltage to the word lines. The determining section determines a degree of deterioration of the non-volatile memory in accordance with a monitoring result by the monitoring section. The notification processing section notifies a life of the non-volatile memory in accordance with a determining result by the determining section.
1. A memory system connectable to a host apparatus, the memory system comprising:
a nonvolatile semiconductor memory; and
a controller circuit configured to receive a read request from the host apparatus,
wherein the controller circuit is configured, in response to the read request, to:
perform a first read operation from the nonvolatile semiconductor memory;
determine whether first error bits in first data read by the first read operation are uncorrectable;
if the first error bits are uncorrectable, perform a second read operation to read from an address of the nonvolatile semiconductor memory from which the first data has been read; and
the controller circuit is further configured to send, to the host apparatus, information about the number of the first error bits.
2. The memory system according to claim 1 , wherein
the information relates to degree of deterioration of the memory system.
3. The memory system according to claim 1 , wherein
the information indicates that a number of the first error bits is greater than a predetermined number.
4. The memory system according to claim 1 , wherein
the controller circuit is further configured, in response to the read request, to:
determine whether second error bits in second data read by the second read operation are uncorrectable;
if the second error bits are uncorrectable, perform a third read operation to read from the address of the nonvolatile semiconductor memory from which the first data has been read.
5. The memory system according to claim 1 , wherein
the nonvolatile semiconductor memory includes a plurality of memory cells and a word line, the plurality of memory cells being connected to the word line,
in a case that the controller circuit performs the first read operation from the nonvolatile semiconductor memory, a first voltage is applied to the word line, and
in a case that the controller circuit performs the second read operation from the nonvolatile semiconductor memory, a second voltage is applied to the word line, the second voltage being different from the first voltage.
6. The memory system according to claim 1 , wherein
the nonvolatile semiconductor memory includes a plurality of memory cells, and
each of the plurality of memory cells is configured to store two or more than two bits of data.
7. The memory system according to claim 1 , wherein
the nonvolatile semiconductor memory is a NAND type flash memory.
8. The memory system according to claim 1 , wherein
the nonvolatile semiconductor memory includes a plurality of memory cells and a word line, the plurality of memory cells being connected to the word line,
in a case that the controller circuit performs the first read operation from the nonvolatile semiconductor memory, a first voltage is applied to the word line, and
in a case that the controller circuit performs the second read operation from the nonvolatile semiconductor memory, a second voltage is applied to the word line, the second voltage being substantially equal to the first voltage.
9. The memory system according to claim 4 , wherein
the nonvolatile semiconductor memory includes a plurality of memory cells and a word line, the plurality of memory cells being connected to the word line,
in a case that the controller circuit performs the first read operation from the nonvolatile semiconductor memory, a first voltage is applied to the word line,
in a case that the controller circuit performs the second read operation from the nonvolatile semiconductor memory, a second voltage is applied to the word line, the second voltage being different from the first voltage, and
in a case that the controller circuit performs the third read operation from the nonvolatile semiconductor memory, a third voltage is applied to the word line, the third voltage being different from the first voltage, the third voltage being different from the second voltage.