De-chuck control method and plasma processing apparatus
A de-chuck control method is provided for de-chucking a workpiece from an electrostatic chuck that electrostatically attracts the workpiece. The de-chuck control method includes a discharge step of introducing an inert gas into a chamber after a plasma process and performing a discharge process; a high pressure step of introducing a gas having a lower ionization energy than helium gas after the discharge step, and maintaining a pressure within the chamber to a higher pressure than a pressure during the plasma process or a pressure during the discharge step; and a de-chuck step of de-chucking the workpiece from the electrostatic chuck with a support pin while the higher pressure is maintained by the high pressure step or after the higher pressure is maintained by the high pressure step.
1. A de-chuck control method for de-chucking a workpiece from an electrostatic chuck that electrostatically attracts the workpiece, the de-chuck control method comprising:
a discharge step of introducing an inert gas into a chamber after a plasma process and performing a discharge process, wherein the chamber pressure during the discharge step is above a chamber pressure during the plasma process;
a high pressure step of introducing a gas having a lower ionization energy than helium gas after the discharge step, increasing a pressure within the chamber to a pressure greater than 500 mT (66.7 Pa), and maintaining the pressure within the chamber at the pressure greater than 500 mT (66.7 Pa), wherein a chamber pressure during the high pressure step is above the chamber pressure during the discharge step; and
a de-chuck step of de-chucking the workpiece from the electrostatic chuck with a support pin while the pressure is maintained above 500 mT (66.7 Pa) by the high pressure step or after the higher pressure is maintained above 500 mT (66.7 Pa) by the high pressure step,
wherein
a surface of the electrostatic chuck facing the workpiece includes a protrusion, and
the high pressure step includes removing an electric charge accumulated in an insulating layer of residual deposits adhering to a surface of the protrusion.
2. The de-chuck control method as claimed in claim 1 , wherein the de-chuck step includes de-chucking the workpiece from the electrostatic chuck with the support pin after the pressure within the chamber stabilizes to a steady state.
3. The de-chuck control method as claimed in claim 1 , wherein a flow rate of gas introduced in the high pressure step is greater than a flow rate of gas introduced in the discharge step.
4. The de-chuck control method as claimed in claim 1 wherein the gas introduced in the high pressure step is N 2 gas, O 2 gas, Ar gas, or a mixed gas including at least two of N 2 gas, O 2 gas, and Ar gas.
5. The de-chuck control method as claimed in claim 1 , further comprising:
a monitor step of monitoring a voltage of the electrostatic chuck for at least 10 seconds after a predetermined time elapses for stabilizing the pressure within the chamber to a steady state;
wherein the de-chuck step includes stopping a process of de-chucking the workpiece with the support pin in a case where a change greater than or equal to a predetermined range is detected in the voltage of the electrostatic chuck in the monitor step.
6. A plasma processing apparatus comprising:
an electrostatic chuck that includes a chuck electrode and is configured to electrostatically attract a workpiece, and a surface of the electrostatic chuck facing the workpiece includes a protrusion; and
a control unit configured to execute
a discharge step of introducing an inert gas into a chamber after a plasma process and performing a discharge process, wherein the chamber pressure during the discharge step is above a chamber pressure during the plasma process;
a high pressure step of introducing a gas having a lower ionization energy than helium gas after the discharge step, increasing a pressure within the chamber to a pressure greater than 500 mT (66.7 Pa), and maintain the pressure within the chamber at the pressure greater than 500 mT (66.7 Pa), wherein a chamber pressure during the high pressure step is above the chamber pressure during the discharge step, and
a de-chuck step of de-chucking the workpiece from the electrostatic chuck by a support pin while maintaining the pressure above 500 mT (66.7 Pa) or after maintaining the pressure 500 mT (66.7 Pa),
wherein
the higher pressure step includes removing an electric charge accumulated in an insulating layer of residual deposits adhering to a surface of the protrusion.