Semiconductor device having a bond pad and method therefor
View Patent ↗A bond pad ( 200 ) has a first wire bond region ( 202 ) and a second wire bond region ( 204 ). In one embodiment, the first wire bond region ( 202 ) extends over a passivation layer ( 18 ). In an alternate embodiment, a bond pad ( 300 ) has a probe region ( 302 ), a first wire bond region ( 304 ), and a second wire bond region ( 306 ). In one embodiment, the probe region ( 302 ) and the wire bond region ( 304 ) extend over a passivation layer ( 18 ). The bond pads may have any number of wire bond and probe regions and in any configuration. The ability for the bond pads to have multiple wire bond regions allows for multiple wire connections to a single bond pad, such as in multi-chip packages. The ability for the bond pads to extend over the passivation layer also allows for reduced integrated circuit die area.
1. An integrated circuit comprising:
a substrate;
a layer of passivation over the substrate; and
a bond pad over the substrate, the bond pad comprising:
a first wire bond region for coupling a first wire bond to the integrated circuit; and
a second wire bond region for coupling a second wire bond to die integrated circuit,
wherein at least a non-periphery portion of the first wire bond region is located over the passivation, and wherein the layer of passivation underneath the bond pad has an opening, and where the opening is any shape; and
wherein the substrate has an interconnect region, and wherein at least a portion of the interconnect region underlies a portion of the bond pad located over the passivation.
2. The integrated circuit of claim 1 , wherein the substrate has active circuitry, and wherein at least a portion of the active circuitry underlies a portion of the bond pad located over the passivation.
3. The integrated circuit of claim 1 , wherein a majority of the first wire bond region is located over the passivation.
4. The integrated circuit of claim 1 , wherein none of the second wire bond region is located over the passivation.
5. The integrated circuit of claim 1 , wherein at least a portion of the first wire bond region is located over the passivation, and at least a portion of the second wire bond region is located over the passivation.
6. The integrated circuit of claim 1 , wherein the layer of passivation underneath the bond pad has a first opening and a second opening.
7. The integrated circuit of claim 1 , wherein the first wire bond region and the second wire bond region are electrically connected.
8. An integrated circuit as in claim 1 , wherein the bond pad is located in a periphery region of the integrated circuit.
9. An integrated circuit as in claim 1 , wherein the bond pad is located in a non-periphery region of the integrated circuit.
10. An integrated circuit as in claim 1 , wherein the integrated circuit is packaged in a multi-chip package, and wherein the multi-chip package comprises:
a second integrated circuit comprising a second bond pad; and
a wire for electrically coupling the first wire bond region and the second bond pad.
11. An integrated circuit comprising:
a substrate;
a layer of passivation over the substrate; and
a bond pad over the substrate, the bond pad comprising:
a first wire bond region for coupling a first wire bond to the integrated circuit,
a second wire bond region for coupling a second wire bond to the integrated circuit, and
a probe region for receiving a probe,
wherein at least a non-periphery portion of the first wire bond region is located over the passivation.
12. An integrated circuit as in claim 11 , wherein the probe region is adjacent to the first wire bond region and is not adjacent to the second wire bond region.
13. An integrated circuit as in claim 11 , wherein the probe region is located between the first wire bond region and the second wire bond region.
14. An integrated circuit as in claim 11 , wherein the first wire bond region is adjacent to the second wire bond region.
15. An integrated circuit as in claim 11 , wherein the first wire bond comprises a first insulating wire and the second wire bond comprises a second insulating wire.
16. The integrated circuit of claim 11 , wherein the substrate has active circuitry, and wherein at least a portion of the active circuitry underlies a portion of the bond pad located over the passivation.
17. The integrated circuit claim 11 , wherein the layer of passivation underneath the bond pad has an opening, and where the opening is any shape.
18. A method for forming an integrated circuit comprising:
providing a substrate;
forming a layer of passivation over the substrate; and
forming a bond pad over the substrate, wherein forming the bond pad comprises:
forming a first wire bond region for coupling a first wire bond to the integrated circuit; and
forming a second wire bond region for coupling a second wire bond to the integrated circuit,
wherein at least a non-periphery portion of the first wire bond region is located over the passivation, and wherein the layer of passivation underneath the bond pad has an opening, and where the opening is any shape; and
wherein the substrate has an interconnect region, and wherein at least a portion of the interconnect region underlies a portion of the bond pad located over the passivation.
19. A multi-chip package, comprising:
a first integrated circuit, comprising:
a substrate;
a layer of passivation over the substrate; and
a first bond pad over the substrate, the first bond pad comprising:
a first wire bond region for coupling a first wire bond to the first integrated circuit; and
a second wire bond region for coupling a second wire bond to the first integrated circuit,
wherein at least a non-periphery portion of the first wire bond region is located over the passivation;
a second integrated circuit, comprising:
a second bond pad; and
a first wire for electrically coupling the first wire bond region and the second bond pad.
20. The integrated circuit of claim 19 , wherein the first integrated circuit and the second integrated circuit are stacked.
21. The integrated circuit of claim 19 , wherein the first integrated circuit and the second integrated circuit are adjacent.
22. The integrated circuit of claim 19 , wherein the first integrated circuit further comprises a third bond pad over the substrate, and wherein the multi-chip package further comprises a second wire for electrically coupling the second wire bond region and the third bond pad.
23. An integrated circuit comprising:
a substrate having active circuitry;
a layer of passivation over the substrate; and
a bond pad over the substrate, the bond pad comprising:
a first wire bond region for coupling a first wire bond to the integrated circuit; and
a second wire bond region for coupling a second wire bond to the integrated circuit,
wherein at least a non-periphery portion of the first wire bond region is located over the passivation, and wherein at least a portion of the active circuitry underlies a portion of the bond pad located over the passivation.
24. The integrated circuit of claim 23 wherein the substrate has an interconnect region, and wherein at least a portion of the interconnect region underlies a portion of the bond pad located over the passivation.
25. The integrated circuit of claim 23 wherein a majority of the first wire bond region is located over the passivation.
26. The integrated circuit of claim 23 , wherein none of the second wire bond region is located over the passivation.
27. The integrated circuit of claim 23 , wherein at least a portion of the first wire bond region is located over the passivation, and at least a portion of the second wire bond region is located over the passivation.
28. The integrated circuit of claim 23 , wherein the layer of passivation underneath the bond pad has a first opening and a second opening.
29. The integrated circuit of claim 23 , wherein the first wire bond region and the second wire bond region are electrically connected.
30. An integrated circuit as in claim 23 , wherein the bond pad is located in a periphery region of the integrated circuit.
31. An integrated circuit as in claim 23 , wherein the bond pad is located in a non-periphery region of the integrated circuit.
32. A method for forming an integrated circuit comprising:
providing a substrate having active circuitry;
forming a layer of passivation over the substrate; and
forming a bond pad over the substrate, wherein forming the bond pad comprises:
forming a first wire bond region for coupling a first wire bond to the integrated circuit; and
forming a second wire bond region for coupling a second wire bond to the integrated circuit,
wherein at least a non-periphery portion of the first wire bond region is located over the passivation, and wherein at least a portion of the active circuitry underlies a portion of the bond pad located over the passivation.
33. A method for forming an integrated circuit comprising:
providing a substrate;
forming a layer of passivation over the substrate; and
forming a bond pad over the substrate, wherein forming the bond pad comprises:
forming a first wire bond region for coupling a first wire bond to the integrated circuit;
forming a second wire bond region for coupling a second wire bond to the integrated circuit; and
a probe region for receiving a probe,
wherein at least a non-periphery portion of the first wire bond region is located over the passivation.