Semiconductor substrate with solid phase epitaxial regrowth with reduced depth of doping profile and method of producing same

1. Method of producing a semiconductor device comprising:

a) providing a semiconductor substrate,

b) providing an insulating layer on a top surface of the semiconductor substrate,

c) making an amorphous layer on a top layer of said semiconductor substrate by a suitable implant

d) implanting a dopant into said semiconductor substrate through said insulating layer to provide said amorphous layer with a predetermined doping profile,

e) applying a solid phase epitaxial regrowth action to regrow said amorphous layer and activate said dopant, wherein in action d), said implant is performed such that said doping profile has a peak value located within said insulating layer.

2. Method according to claim 1 , wherein said dopant is activated to provide said amorphous layer after action e) with a conductivity profile having a peak conductivity value located substantially at said top surface.

3. Method according to claim 1 , wherein said semiconductor substrate is a Si substrate and action c) is performed with at least one of Ge, GeF 2 , Si, Xe, or Ar atoms.

4. Method according to claim 3 , wherein said action c) is performed with Ge in a dose of 10 15 atoms/cm 2 and an energy between 2 and 30 keV.

5. Method according to claim 1 , wherein said action d) is performed with B at an energy of less than 5 keV.

6. Method according to claim 5 , wherein said action d) is perfomed with B and a dose of 10 15 atoms/cm 2 .

7. Method according to claim 6 , wherein said action d) is performed at a temperature of 550-700° C. during about 1 minute.