Memory device and methods of using and making the device
View Patent ↗A memory cell made of two electrodes with a controllably conductive media between the two electrodes is disclosed. The controllably conductive media contains an active low conductive layer and passive layer. The controllably conductive media changes its impedance when an external stimuli such as an applied electric field is imposed thereon. Methods of making the memory devices/cells, methods of using the memory devices/cells, and devices such as computers containing the memory devices/cells are also disclosed.
1. A method of making a memory cell comprising:
providing a first electrode;
forming a passive layer comprising a conductivity facilitating compound over the first electrode, the passive layer having an ability to donate and accept at least one of holes and electrons;
forming a low conductive layer comprising a conjugated organic polymer over the passive layer, wherein the conductivity facilitating compound of the passive layer is selected, the low conductive layer having an ability to donate and accept at least one of holes and electrons, the low conductive layer selected so that the passive layer has a Fermi level within about 0.7 eV of a valence band of the low conductive layer, the conjugated organic polymer is formed by chemical vapor deposition and a catalytic action of the passive layer; and
providing a second electrode over the low conductive layer.
2. The method of claim 1 , wherein the conductivity facilitating compound comprises at least one selected from the group consisting of copper sulfide, silver sulfide, and gold sulfide.
3. The method of claim 1 , wherein the passive layer has a thickness from about 2 Å to about 0.1 μm.
4. The method of claim 1 , wherein the low conductive layer has a thickness from about 0.001 μm to about 5 μm.
5. The method of claim 1 , wherein the passive layer acts as a catalyst when forming the low conductive layer.
6. The method of claim 1 , wherein the low conductive layer comprises a conjugated organic polymer.
7. The method of claim 1 , wherein the passive layer has a Fermi level within about 0.5 eV of a valence band of the low conductive layer.
8. The method of claim 1 , wherein the memory cell has a size area of about 0.0001 μm 2 or more and about 4 μm 2 or less.
9. The method of claim 1 , wherein the passive layer has a Fermi level within about 0.3 eV of a valence band of the low conductive layer.
10. The method of claim 1 , wherein the conductivity facilitating compound comprises copper sulfide.
11. The method of claim 1 , wherein the low conductive layer comprises a polyacetylene.
12. The method of claim 1 , wherein the low conductive layer comprises a polyphenylacetylene.
13. The method of claim 1 , wherein the low conductive layer comprises a polydiphenylacetylene.
14. The method of claim 1 , wherein the low conductive layer comprises a polyaniline.
15. The method of claim 1 , wherein the low conductive layer comprises a poly(p-phenylene vinylene).
16. The method of claim 1 , wherein the low conductive layer comprises a polythiophene.
17. The method of claim 1 , wherein the low conductive layer comprises a polyporphyrin.
18. The method of claim 1 , wherein the low conductive layer comprises a polyvinylene.
19. The method of claim 1 , wherein the low conductive layer comprises a polystirole.