Method and structure for contacting an overlying electrode for a magnetoelectronics element
View Patent ↗A method for contacting an electrically conductive electrode overlying a first dielectric material of a structure is provided. The method includes forming a mask layer overlying the electrically conductive electrode and patterning the mask layer to form an exposed electrically conductive electrode material. At least a portion of the exposed electrically conductive electrode material is removed while an electrically conductive veil is formed adjacent the mask layer. A metal contact layer is formed such that said metal contact layer contacts the electrically conductive veil.
1. A random access memory device having a metal contact layer and a plurality of magnetic memory units electrically coupled to the metal contact layer, each magnetic memory unit comprising:
a magnetoelectronics element;
an electrode overlying said magnetoelectronics elements; and
an electrically conductive veil, wherein said electrically conductive veil electrically couples said electrode and said metal contact layer.
2. The random access memory device of claim 1 , said electrically conductive veil comprised of a material of which said electrode is comprised.
3. The random access memory device of claim 1 , said magnetoelectronics element having a magnetic layer, wherein said electrically conductive veil is comprised of materials that comprise said electrode and said magnetic layer.
4. The random access memory device of claim 1 , said magnetoelectronics element comprising one of a magnetic tunnel junction element and a giant magneto resistance element.
5. The random access memory device of claim 1 , wherein at least one insulating layer is disposed between said electrode and said metal contact layer.
6. The random access memory device of claim 5 , said at least one insulating layer comprising a mask layer.
7. A semiconductor structure for making contact to an electrode, the semiconductor structure comprising:
an electrode;
an electrically conductive contact layer;
at least one insulating layer disposed between said electrode and said electrically conductive contact layer; and
one of a sputter by-product of said electrode and an etch by-product of said electrode that electrically couples said electrode and said electrically conductive contact layer.
8. The semiconductor structure for making contact to an electrode of claim 7 , wherein one of a sputter by-product of said electrode and an etch by-product of said electrode extends from said electrode to said electrically conductive contact layer.
9. The semiconductor structure for making contact to an electrode of claim 7 , said at least one insulating layer comprising a mask layer.
10. The semiconductor structure for making contact to an electrode of claim 7 , said one of a sputter by-product of said electrode and an etch by-product of said electrode comprising a sputter by-product of said electrode produced by reactive ion sputtering.
11. The semiconductor structure for making contact to an electrode of claim 7 , wherein said electrode is electrically coupled to a magnetoelectronics element.
12. A semiconductor structure for making electrical contact to a magnetoelectronics element, the semiconductor structure comprising:
an electrode overlying the magnetoelectronics element;
an electrically conductive contact layer overlying said electrode;
at least one insulating layer disposed between said electrode and said electrically conductive contact layer; and
an electrically conductive veil that extends from said electrode to said electrically conductive contact layer.
13. The semiconductor structure for making electrical contact to a magnetoelectronics element of claim 12 , said electrode comprising at least one material selected from the group consisting of tantalum, aluminum, tantalum nitride, and combinations thereof.
14. The semiconductor structure for making electrical contact to a magnetoelectronics element of claim 12 , said at least one insulating layer comprising a mask layer.
15. The semiconductor structure for making electrical contact to a magnetoelectronics element of claim 12 , said electrically conductive veil formed by one of sputtering said electrode and etching said electrode.
16. The semiconductor structure for making electrical contact to a magnetoelectronics element of claim 12 , said magnetoelectronics element having a magnetic layer, wherein said electrically conductive veil is comprised of materials that comprise said electrode and said magnetic layer.
17. The semiconductor structure for making electrical contact to a magnetoelectronics element of claim 12 , said magnetoelectronics element comprising one of a magnetic tunnel junction element and a giant magneto resistance element.