Ultraviolet curing process for spin-on dielectric materials used in pre-metal and/or shallow trench isolation applications
A UV curing process for a dielectric material used in pre-metal and shallow trench isolation applications comprises coating a suitable dielectric material onto a substrate; and exposing the dielectric material to ultraviolet radiation in an amount effective to reduce an organic content and/or increase a density and./or increase a wet etch resistance of the dielectric material. Optionally, the UV cured dielectric material may be exposed to multiple ultraviolet radiation patterns.
1 . A UV curing process for a dielectric material used in pre-metal and shallow trench isolation applications, comprising:
coating a dielectric material onto a substrate; and
exposing the dielectric material to ultraviolet radiation in an amount effective to reduce an organic content in the dielectric material.
2 . The process of claim 1 , wherein exposing the dielectric material to the ultraviolet radiation comprises forming an atmosphere about the dielectric material, wherein the atmosphere comprises N 2 , H 2 , Ar, He, Ne, H 2 O vapor, CO z , O z , C x H y , C x F y , C x H z F y , and mixtures thereof, wherein x is an integer between 1 and 6, y is an integer between 4 and 14, and z is an integer between 1 and 3.
3 . The process of claim 1 , wherein the ultraviolet radiation pattern comprises wavelengths greater than 150 nanometers to less than 400 nanometers.
4 . The process of claim 1 , further comprising heating the substrate during the exposure.
5 . The process of claim 1 , wherein the pre-metal dielectric material comprises hydrogen silsesquioxanes, alkyl silsesquioxanes, carbon doped oxides, hydrogenated silicon oxy-carbides, B-staged polymers, arylcyclobutene-based polymers, polyphenylene-based polymers, polyarylene ethers, polyimides, porous silicas, and combinations comprising at least one of the foregoing dielectric materials.
6 . The process of claim 1 , wherein the spin on pre-metal dielectric material has substantially the same dielectric constant before and after exposure to the ultraviolet radiation.
7 . The process of claim 1 , wherein the elastic modulus property and/or the hardness property of the pre-metal dielectric material increases by at least about 50% during the exposure.
8 . The process of claim 1 , wherein exposing the spin on pre-metal dielectric material to the ultraviolet radiation pattern for a period of time and intensity is effective to decrease the dielectric constant.
9 . The process of claim 1 , further comprising exposing the spin on pre-metal dielectric material to a furnace cure process or a hot place cure process subsequent to exposing the spin on pre-metal dielectric material to the ultraviolet radiation pattern.
10 . A UV curing process for a dielectric material used in pre-metal and shallow trench isolation applications, comprising:
coating a dielectric material onto a substrate; and
exposing the dielectric material to ultraviolet radiation in an amount effective to densify the dielectric material.
11 . The process of claim 10 , wherein exposing the dielectric material to the ultraviolet radiation comprises forming an atmosphere about the dielectric material, wherein the atmosphere comprises N 2 , H 2 , Ar, He, Ne, H 2 O vapor, CO z , O z , C x H y , C x F y , C x H z F y , and mixtures thereof, wherein x is an integer between 1 and 6, y is an integer between 4 and 14, and z is an integer between 1 and 3.
12 . The process of claim 10 , wherein the ultraviolet radiation pattern comprises wavelengths greater than 150 nanometers to less than 400 nanometers.
13 . The process of claim 10 , further comprising heating the substrate during the exposure.
14 . The process of claim 10 , wherein the pre-metal dielectric material comprises hydrogen silsesquioxanes, alkyl silsesquioxanes, carbon doped oxides, hydrogenated silicon oxy-carbides, B-staged polymers, arylcyclobutene-based polymers, polyphenylene-based polymers, polyarylene ethers, polyimides, porous silicas, and combinations comprising at least one of the foregoing dielectric materials.
15 . The process of claim 10 , wherein the spin on pre-metal dielectric material has substantially the same dielectric constant before and after exposure to the ultraviolet radiation.
16 . The process of claim 10 , wherein the elastic modulus property and/or the hardness property of the pre-metal dielectric material increases by at least about 50% during the exposure.
17 . The process of claim 10 , wherein exposing the spin on pre-metal dielectric material to the ultraviolet radiation pattern for a period of time and intensity is effective to decrease the dielectric constant.
18 . The process of claim 10 , further comprising exposing the spin on pre-metal dielectric material to a furnace cure process or a hot place cure process subsequent to exposing the spin on pre-metal dielectric material to the ultraviolet radiation pattern.
19 . A UV curing process for a dielectric material used in pre-metal and shallow trench isolation applications, comprising:
coating a dielectric material onto a substrate; and
exposing the dielectric material to ultraviolet radiation in an amount effective to increase a wet etch resistance of the dielectric material , wherein the wet etch resistance increases relative to a wet etching rate of the dielectric material prior to the exposure.
20 . A process for curing a spin on pre-metal dielectric material coated onto a surface of a substrate, comprising:
coating a spin on pre-metal dielectric material onto a substrate;
exposing the spin on pre-metal dielectric material to a first ultraviolet radiation pattern for a period of time and intensity effective to increase an elastic modulus property and/or a hardness property of the pre-metal dielectric material; and
exposing the spin on pre-metal dielectric material to a second ultraviolet radiation pattern for a period of time and intensity effective to further increase the elastic modulus property and/or the hardness property of the pre-metal dielectric material, wherein the first and second ultraviolet radiation patterns are different.
21 . The process of claim 20 , wherein the first and second ultraviolet radiation patterns comprise wavelengths greater than 150 nanometers to less than 400 nanometers.
22 . The process of claim 20 , further comprising heating the substrate during the exposure.
23 . The process of claim 20 , wherein the pre-metal dielectric material comprises hydrogen silsesquioxanes, alkyl silsesquioxanes, carbon doped oxides, hydrogenated silicon oxy-carbides, B-staged polymers, arylcyclobutene-based polymers, polyphenylene-based polymers, polyarylene ethers, polyimides, porous silicas, and combinations comprising at least one of the foregoing dielectric materials.
24 . The process of claim 20 , wherein coating the spin on pre-metal dielectric material onto the substrate is at an aspect ratio greater than 300 nanometers.