Patent Assignment
Reel/Frame 020986/0143
SECURITY AGREEMENT
Recorded: 2008-05-09
Received: 2008-05-09
Pages: 36
Assignor
AXCELIS TECHNOLOGIES, INC.
Executed: 2008-04-23
Assignee
SILICON VALLEY BANK
3003 TASMAN DRIVE, SANTA CLARA, CA, 95054, UNITED STATES
Covered Applications
(100)
PROCESSES FOR CURING SILICON BASED LOW-K DIELECTRIC MATERIALS
App. No. 12/037,222
→
METHODS FOR IN SITU SURFACE TREATMENT IN AN ION IMPLANTATION SYSTEM
App. No. 12/030,306
→
REMOTE WAFER PRESENCE DETECTION WITH PASSIVE RFID
App. No. 12/022,300
→
STRUCTURES AND METHODS FOR MEASURING BEAM ANGLE IN AN ION IMPLANTER
App. No. 11/947,632
→
PLASMA ELECTRON FLOOD FOR ION BEAM IMPLANTER
App. No. 11/935,738
→
BROAD RIBBON BEAM ION IMPLANTER ARCHITECTURE WITH HIGH MASS-ENERGY CAPABILITY
App. No. 11/932,117
→
LOW-COST ELECTROSTATIC CLAMP WITH FAST DE-CLAMP TIME
App. No. 11/924,166
→
DOUBLE PLASMA ION SOURCE
App. No. 60/981,576
→
WORKPIECE HANDLING SCAN ARM FOR ION IMPLANTATION SYSTEM
App. No. 11/840,888
→
WORKPIECE GRIPPING INTEGRITY SENSOR
App. No. 60/954,949
→
ION IMPLANTER HAVING COMBINED HYBRID AND DOUBLE MECHANICAL SCAN ARCHITECTURE
App. No. 11/831,744
→
ELEVATED TEMPERATURE RF ION SOURCE
App. No. 60/952,895
→
HYBRID ION SOURCE/MULTIMODE ION SOURCE
App. No. 60/952,916
→
METHOD OF REDUCING TRANSIENT WAFER TEMPERATURE DURING IMPLANTATION
App. No. 11/829,243
→
WORK-PIECE PROCESSING SYSTEM
App. No. 11/765,499
→
BEAM ANGLE ADJUSTMENT IN ION IMPLANTERS
App. No. 11/757,063
→
AIRFLOW MANAGEMENT FOR PARTICLE ABATEMENT IN SEMICONDUCTOR MANUFACTURING EQUIPMENT
App. No. 11/752,118
→
METHOD AND SYSTEM FOR ION BEAM PROFILING
App. No. 11/742,178
→
METHODS AND SYSTEMS FOR TRAPPING ION BEAM PARTICLES AND FOCUSING AN ION BEAM
App. No. 11/739,934
→
DOSE UNIFORMITY CORRECTION TECHNIQUE
App. No. 11/739,314
→
ION BEAM SCANNING CONTROL METHODS AND SYSTEMS FOR ION IMPLANTATION UNIFORMITY
App. No. 11/784,709
→
ION SOURCE ARC CHAMBER SEAL
App. No. 11/689,769
→
WORKPIECE GRIPPING DEVICE
App. No. 11/687,184
→
SYSTEMS AND METHODS FOR BEAM ANGLE ADJUSTMENT IN ION IMPLANTERS
App. No. 11/716,622
→
VARIABLE FREQUENCY ELECTROSTATIC CLAMPING
App. No. 11/704,033
→
OFFSET PHASE OPERATION ON A MULTIPHASE AC ELECTROSTATIC CLAMP
App. No. 11/703,427
→
ULTRAVIOLET ASSISTED PORE SEALING OF POROUS LOW K DIELECTRIC FILMS
App. No. 11/702,465
→
METHOD OF REDUCING PARTICLE CONTAMINATION FOR ION IMPLANTERS
App. No. 11/648,979
→
SYSTEM AND METHOD FOR TWO-DIMENSIONAL BEAM SCAN ACROSS A WORKPIECE OF AN ION IMPLANTER
App. No. 11/644,623
→
ANNULUS CLAMPING AND BACKSIDE GAS COOLED ELECTROSTATIC CHUCK
App. No. 11/641,334
→
WIDE AREA RADIO FREQUENCY PLASMA APPARATUS FOR PROCESSING MULTIPLE SUBSTRATES
App. No. 11/635,227
→
HIGH THROUGHPUT WAFER NOTCH ALIGNER
App. No. 11/634,697
→
USE OF ION INDUCED LUMINESCENCE (IIL) AS FEEDBACK CONTROL FOR ION IMPLANTATION
App. No. 11/633,694
→
SLIDING WAFER RELEASE GRIPPER / WAFER PEELING GRIPPER
App. No. 11/582,814
→
DIARYL ALKYLPHOSPHONATES AND METHODS FOR PREPARING SAME
App. No. 11/550,158
→
SENSOR FOR ION IMPLANTER
App. No. 11/548,295
→
Segmented resonant antenna for radio frequency inductively coupled plasmas
App. No. 11/544,971
→
CLOSED LOOP DOSE CONTROL FOR ION IMPLANTATION
App. No. 11/543,346
→
METHODS FOR BEAM CURRENT MODULATION BY ION SOURCE PARAMETER MODULATION
App. No. 11/541,087
→
FLUORINE BASED CLEANING OF AN ION SOURCE
App. No. 11/540,469
→
BEAM LINE ARCHITECTURE FOR ION IMPLANTER
App. No. 11/540,064
→
METHODS FOR RAPIDLY SWITCHING OFF AN ION BEAM
App. No. 11/540,449
→
BROAD BEAM ION IMPLANTATION ARCHITECTURE
App. No. 11/540,897
→
BEAM TUNING WITH AUTOMATIC MAGNET POLE ROTATION FOR ION IMPLANTERS
App. No. 11/523,144
→
SYSTEM FOR MAGNETIC SCANNING AND CORRECTION OF AN ION BEAM
App. No. 11/523,148
→
SYSTEMS AND METHODS FOR BEAM ANGLE ADJUSTMENT IN ION IMPLANTERS
App. No. 11/520,190
→
DEPOSITION REDUCTION SYSTEM FOR AN ION IMPLANTER
App. No. 11/506,998
→
THROUGHPUT ENHANCEMENT FOR SCANNED BEAM ION IMPLANTERS
App. No. 11/503,685
→
OPTIMIZATION OF A UTILIZATION OF AN ION BEAM IN A TWO-DIMENSIONAL MECHANICAL SCAN ION IMPLANTATION SYSTEM
App. No. 11/479,652
→
Ultraviolet curing process for low k dielectric films
App. No. 11/446,052
→
PARTICULATE PREVENTION IN ION IMPLANTATION
App. No. 11/445,667
→
CHARGED BEAM DUMP AND PARTICLE ATTRACTOR
App. No. 11/445,677
→
BEAM STOP AND BEAM TUNING METHODS
App. No. 11/445,722
→
SYSTEM AND METHOD OF ION BEAM CONTROL IN RESPONSE TO A BEAM GLITCH
App. No. 11/441,609
→
ION SOURCE
App. No. 11/437,547
→
COMBINATION LOAD LOCK FOR HANDLING WORKPIECES
App. No. 11/432,923
→
RIBBON BEAM ION IMPLANTER CLUSTER TOOL
App. No. 11/432,977
→
LOAD LOCK CONTROL
App. No. 11/409,759
→
METHOD OF MEASURING ION BEAM POSITION
App. No. 11/390,039
→
PROCESSES FOR MONITORING THE LEVELS OF OXYGEN AND/OR NITROGEN SPECIES IN A SUBSTANTIALLY OXYGEN AND NITROGEN-FREE PLASMA ASHING PROCESS
App. No. 11/386,327
→
Thermal chuck and processes for manufacturing the thermal chuck
App. No. 11/377,841
→
ARC quenching circuit to mitigate ion beam disruption
App. No. 60/781,977
→
ION BEAM MONITORING IN AN ION IMPLANTER USING AN IMAGING DEVICE
App. No. 11/374,945
→
Ion implanter having a superconducting magnet
App. No. 11/343,760
→
APPLICATION OF DIGITAL FREQUENCY AND PHASE SYNTHESIS FOR CONTROL OF ELECTRODE VOLTAGE PHASE IN A HIGH-ENERGY ION IMPLANTATION MACHINE, AND A MEANS FOR ACCURATE CALIBRATION OF ELECTRODE VOLTAGE PHASE
App. No. 11/334,265
→
ION BEAM ANGLE MEASUREMENT SYSTEMS AND METHODS EMPLOYING VARIED ANGLE SLOT ARRAYS FOR ION IMPLANTATION SYSTEMS
App. No. 11/313,319
→
ION BEAM ANGLE MEASUREMENT SYSTEMS AND METHODS FOR ION IMPLANTATION SYSTEMS
App. No. 11/299,593
→
Medium pressure plasma system for removal of surface layers without substrate loss
App. No. 11/295,273
→
ION IMPLANTER WITH IONIZATION CHAMBER ELECTRODE DESIGN
App. No. 11/294,975
→
BEAM CURRENT STABILIZATION UTILIZING GAS FEED CONTROL LOOP
App. No. 11/290,346
→
MEANS TO ESTABLISH ORIENTATION OF ION BEAM TO WAFER AND CORRECT ANGLE ERRORS
App. No. 11/290,344
→
ION IMPLANTATION BEAM ANGLE CALIBRATION
App. No. 11/288,908
→
SYSTEMS AND METHODS THAT MITIGATE CONTAMINATION AND MODIFY SURFACE CHARACTERISTICS DURING ION IMPLANTATION PROCESSES THROUGH THE INTRODUCTION OF GASES
App. No. 11/273,039
→
ION IMPLANTER WITH CONTAMINANT COLLECTING SURFACE
App. No. 11/272,529
→
ION BEAM PROFILER
App. No. 11/235,754
→
WORKPIECE TRANSFER DEVICE
App. No. 11/219,281
→
APPARATUS AND PLASMA ASHING PROCESS FOR INCREASING PHOTORESIST REMOVAL RATE
App. No. 11/217,247
→
METHOD AND APPARATUS FOR SCANNING A WORKPIECE IN A VACUUM CHAMBER OF AN ION BEAM IMPLANTER
App. No. 11/173,494
→
APPARATUS AND PROCESS FOR TREATING DIELECTRIC MATERIALS
App. No. 11/155,525
→
WORKPIECE HANDLING ALIGNMENT SYSTEM
App. No. 11/147,973
→
ULTRAVIOLET ASSISTED POROGEN REMOVAL AND/OR CURING PROCESSES FOR FORMING POROUS LOW K DIELECTRICS
App. No. 11/146,742
→
Ultraviolet curing process for spin-on dielectric materials used in pre-metal and/or shallow trench isolation applications
App. No. 11/146,744
→
METHOD FOR RECIPROCATING A WORKPIECE THROUGH AN ION BEAM
App. No. 11/099,062
→
WAFER SCANNING SYSTEM WITH RECIPROCATING ROTARY MOTION UTILIZING SPRINGS AND COUNTERWEIGHTS
App. No. 11/099,022
→
RECIPROCATING DRIVE FOR SCANNING A WORKPIECE
App. No. 11/098,878
→
RECIPROCATING DRIVE FOR SCANNING A WORKPIECE THROUGH AN ION BEAM
App. No. 11/098,942
→
MULTICHANNEL ION GUN
App. No. 11/074,434
→
HIGH CONDUCTANCE ION SOURCE
App. No. 11/074,435
→
APPARATUS FOR HEATING A SUBSTRATE IN A VARIABLE TEMPERATURE PROCESS USING A FIXED TEMPERATURE CHUCK
App. No. 11/059,202
→
IN-SITU ABSOLUTE MEASUREMENT PROCESS AND APPARATUS FOR FILM THICKNESS, FILM REMOVAL RATE, AND REMOVAL ENDPOINT PREDICTION
App. No. 11/053,731
→
ION SOURCE FOR USE IN AN ION IMPLANTER
App. No. 11/049,913
→
BIASED ELECTROSTATIC DEFLECTOR
App. No. 11/047,238
→
PARTS AUTHENTICATION EMPLOYING RADIO FREQUENCY IDENTIFICATION
App. No. 11/043,758
→
IN-SITU CLEANING OF BEAM DEFINING APERTURES IN AN ION IMPLANTER
App. No. 11/037,491
→
PLASMA ASHING PROCESS
App. No. 90/007,367
→
ION BEAM SCANNING CONTROL METHODS AND SYSTEMS FOR ION IMPLANTATION UNIFORMITY
App. No. 11/029,052
→
REMOVING BYPRODUCTS OF PHYSICAL AND CHEMICAL REACTIONS IN AN ION IMPLANTER
App. No. 11/022,060
→
METHOD AND APPARATUS FOR ION BEAM PROFILING
App. No. 11/012,585
→
METHOD OF CORRECTION FOR WAFER CRYSTAL CUT ERROR IN SEMICONDUCTOR PROCESSING
App. No. 11/006,840
→
ULTRAVIOLET ASSISTED PORE SEALING OF POROUS LOW K DIELECTRIC FILMS
App. No. 10/987,276
→