Structures and methods for measuring beam angle in an ion implanter

1. An ion beam angular measurement apparatus, comprising:

an arrangement of composite pillars formed on an insulating layer, wherein the composite pillars comprise:

a first layer formed on the insulating layer;

a second layer formed on the first layer; and

a pad contact formed at each end of the composite pillar, wherein the composite pillars selectively allow ion beams to penetrate the first layer of a pillar, and wherein resistivity measurements are taken for each of the composite pillars before and after a test ion beam implantation, wherein the resistivity measurements yield information relating to an angle of the ion beam during the test ion beam implantation.

2. The apparatus of claim 1 , wherein the composite pillars are equally spaced apart.

3. The apparatus of claim 1 , wherein the composite pillars are approximately equally dimensioned.

4. The apparatus of claim 1 , wherein identically fabricated copies of the ion beam angular measurement apparatus are configured to be placed successively into an ion implanter at known angles, and wherein the resistivity of the pillars in each apparatus generally determines calibration curves for an ion implanter utilized for the test ion beam implantation.

5. The apparatus of claim 1 , wherein the pad contacts at each end of the composite pillars are configured to be contacted by a test probe.

6. The apparatus of claim 1 , wherein the pad contacts at each end of the composite pillars comprise heavily doped portions of the first layer, wherein a resistivity of the first and second contact pads is minimal.

7. The apparatus of claim 1 , wherein the insulating layer comprises a silicon dioxide layer.

8. The apparatus of claim 1 , wherein the first layer comprises silicon or polysilicon.

9. The apparatus of claim 1 , wherein the substrate comprises a silicon substrate.

10. The apparatus of claim 1 , wherein the second layer comprises an oxide.

11. An ion beam angular measurement apparatus, comprising:

an insulating layer provided over a semiconductor substrate; and

a plurality of pillars formed on the insulating layer, wherein the plurality of pillars each comprise at least a first layer formed on the insulating layer, and wherein the first layer is configured to selectively allow penetration of an ion beam therein, wherein after the penetration of the ion beam into the first layer, a resistivity of each of the plurality of pillars is associated with an angle of the ion beam with respect to the semiconductor substrate.

12. The ion beam angular measurement apparatus of claim 11 , wherein the insulating layer comprises a silicon dioxide layer.

13. The ion beam angular measurement apparatus of claim 11 , wherein the first layer comprises silicon or polysilicon.

14. The ion beam angular measurement apparatus of claim 11 , wherein the substrate comprises a silicon substrate.

15. The ion beam angular measurement apparatus of claim 11 , wherein the plurality of pillars each further comprise a second layer formed on the first layer.

16. The ion beam angular measurement apparatus of claim 15 , wherein the second layer comprises an oxide.

17. The ion beam angular measurement apparatus of claim 11 , wherein each of the plurality of pillars comprise first and second contact pads positioned at a respective first end and second end each pillar, wherein the first and second contact pads of each of the plurality of pillars are configured for measuring the resistivity of each of the respective plurality of pillars.

18. The ion beam angular measurement apparatus of claim 17 , wherein the first and second contact pads of each of the plurality of pillars comprise heavily doped portions of the first layer, wherein a resistivity of the first and second contact pads is minimal.

19. The ion beam angular measurement apparatus of claim 11 , wherein the resistivity of each of the plurality of pillars is further a function of a spacing between the plurality of pillars.

20. An ion beam angular measurement apparatus, comprising:

an insulating layer provided over a semiconductor substrate; and

a plurality of pillars formed on the insulating layer, wherein the plurality of pillars each comprise a first layer and a second layer, wherein the first layer is formed on the insulating layer and the second layer formed on the first layer, and wherein the first layer is configured to selectively allow penetration of an ion beam into the first layer, wherein after the penetration of the ion beam into the first layer, a resistivity of each of the plurality of pillars is associated with an angle of the ion beam with respect to the semiconductor substrate.

21. The ion beam angular measurement apparatus of claim 20 , wherein the insulating layer comprises a silicon dioxide layer.

22. The ion beam angular measurement apparatus of claim 20 , wherein the first layer comprises silicon or polysilicon, and wherein the second layer comprises silicon dioxide.

23. The ion beam angular measurement apparatus of claim 20 , wherein the second layer comprises an oxide.

24. The ion beam angular measurement apparatus of claim 20 , wherein each of the plurality of pillars comprise first and second contact pads positioned at a respective first end and second end each pillar, wherein the first and second contact pads of each of the plurality of pillars are configured for measuring the resistivity of each of the respective plurality of pillars.

25. The ion beam angular measurement apparatus of claim 24 , wherein the first and second contact pads of each of the plurality of pillars comprise heavily doped portions of the first layer, wherein a resistivity of the first and second contact pads is minimal.