Patent Assignment
Reel/Frame 026250/0524
FIRST AMENDMENT TO SECURITY AGREEMENT
Recorded: 2011-05-10
Received: 2011-05-10
Pages: 13
Assignor
AXCELIS TECHNOLOGIES, INC.
Executed: 2011-04-25
Assignee
SILICON VALLEY BANK
275 GROVE STREET, SUITE 2-200, NEWTON, MA, 02466, UNITED STATES
Covered Applications
(83)
UNIFORMITY OF A SCANNED ION BEAM
App. No. 13/077,112
→
FLUID DISTRIBUTION MEMBERS AND/OR ASSEMBLIES
App. No. 13/051,713
→
MICROWAVE PLASMA ELECTRON FLOOD
App. No. 13/010,888
→
CARBON IMPLANTATION PROCESS AND CARBON ION PRECURSOR COMPOSITION
App. No. 13/010,397
→
Dose Measurement Method using Calorimeter
App. No. 12/977,269
→
Implementation of CO-Gases for Germanium and Boron Ion Implants
App. No. 12/948,309
→
Post Implant Wafer Heating Using Light
App. No. 12/944,407
→
WIDE AREA RADIO FREQUENCY PLASMA APPARATUS FOR PROCESSING MULTIPLE SUBSTRATES
App. No. 12/910,096
→
VERSATILE BEAM GLITCH DETECTION SYSTEM
App. No. 12/846,313
→
PLASMA MEDIATED ASHING PROCESSES
App. No. 12/844,193
→
METHOD AND SYSTEM FOR DETECTION OF SOLID MATERIALS IN A PLASMA USING AN ELECTROMAGNETIC CIRCUIT
App. No. 12/843,175
→
ADJUSTABLE LOUVERED PLASMA ELECTRON FLOOD ENCLOSURE
App. No. 12/835,138
→
USE OF BEAM SCANNING TO IMPROVE UNIFORMITY AND PRODUCTIVITY OF A 2D MECHANICAL SCAN IMPLANTATION SYSTEM
App. No. 12/826,050
→
SYSTEM AND METHOD FOR ION IMPLANTATION WITH IMPROVED PRODUCTIVITY AND UNIFORMITY
App. No. 12/796,215
→
Heated Annulus Chuck
App. No. 61/352,665
→
Heated Electrostatic Chuck Including Mechanical Clamp Capability at High Temperature
App. No. 61/352,554
→
Effective Algorithm for Warming a Twist Axis for Cold Ion Implantations
App. No. 61/351,607
→
Matched Coefficient of Thermal Expansion for an Electrostatic Chuck
App. No. 61/349,552
→
Heated Rotary Seal and Bearing for Chilled Ion Implantation System
App. No. 61/349,571
→
Throughput Enhancement for Scanned Beam Ion Implanters
App. No. 12/774,037
→
MAGNETIC SCANNING SYSTEM WITH IMPROVED EFFICIENCY
App. No. 12/769,226
→
SYSTEM AND METHOD FOR TRANSITIONING FROM A MISSILE WARNING SYSTEM TO A FINE TRACKING SYSTEM IN A DIRECTIONAL INFRARED COUNTERMEASURES SYSTEM
App. No. 12/764,450
→
IN-VACUUM BEAM DEFINING APERTURE CLEANING FOR PARTICLE REDUCTION
App. No. 12/755,081
→
Vapor Compression Refridgeration Chuck for Ion Implanters
App. No. 12/725,508
→
METHOD FOR IMPROVING IMPLANT UNIFORMITY DURING PHOTORESIST OUTGASSING
App. No. 12/717,536
→
THERMAL ISOLATION ASSEMBLIES FOR WAFER TRANSPORT APPARATUS AND METHODS OF USE THEREOF
App. No. 12/694,597
→
SULFONAMIDE DERIVATIVES
App. No. 12/685,913
→
Substantially Non-Oxidizing Plasma Treatment Devices and Processes
App. No. 12/631,117
→
TUNING HARDWARE FOR PLASMA ASHING APPARATUS AND METHODS OF USE THEREOF
App. No. 12/621,136
→
METHOD AND APPARATUS FOR CLEANING RESIDUE FROM AN ION SOURCE COMPONENT
App. No. 12/616,662
→
METHOD AND SYSTEM FOR INCREASING BEAM CURRENT ABOVE A MAXIMUM ENERGY FOR A CHARGE STATE
App. No. 12/609,912
→
METHOD OF DOPING SEMICONDUCTORS
App. No. 12/511,737
→
LOW-INERTIA MULTI-AXIS MULTI-DIRECTIONAL MECHANICALLY SCANNED ION IMPLANTATION SYSTEM
App. No. 12/487,229
→
POST-DECEL MAGNETIC ENERGY FILTER FOR ION IMPLANTATION SYSTEMS
App. No. 12/477,631
→
CONTROL OF PARTICLES ON SEMICONDUCTOR WAFERS WHEN IMPLANTING BORON HYDRIDES
App. No. 12/474,786
→
SYSTEM AND METHOD OF PERFORMING UNIFORM DOSE IMPLANTATION UNDER ADVERSE CONDITIONS
App. No. 12/431,081
→
PLASMA MEDIATED ASHING PROCESSES THAT INCLUDE FORMATION OF A PROTECTIVE LAYER BEFORE AND/OR DURING THE PLASMA MEDIATED ASHING PROCESS
App. No. 12/398,390
→
NON-CONDENSING THERMOS CHUCK
App. No. 12/358,788
→
ION BEAM ANGLE CALIBRATION AND EMITTANCE MEASUREMENT SYSTEM FOR RIBBON BEAMS
App. No. 12/357,688
→
ENHANCED LOW ENERGY ION BEAM TRANSPORT IN ION IMPLANTATION
App. No. 12/357,973
→
ELECTROSTATIC CHUCK SHIELDING MECHANISM
App. No. 12/340,936
→
ION IMPLANTATION WITH DIMINISHED SCANNING FIELD EFFECTS
App. No. 12/338,644
→
DE-CLAMPING WAFERS FROM AN ELECTROSTATIC CHUCK
App. No. 12/331,619
→
ELECTROSTATIC CHUCK WITH COMPLIANT COAT
App. No. 12/331,813
→
FRONT END OF LINE PLASMA MEDIATED ASHING PROCESSES AND APPARATUS
App. No. 12/275,394
→
WAFER GROUNDING METHOD FOR ELECTROSTATIC CLAMPS
App. No. 12/262,399
→
ELECTROSTATIC CHUCK GROUND PUNCH
App. No. 12/262,990
→
HYBRID SCANNING FOR ION IMPLANTATION
App. No. 12/245,866
→
EXTRACTION ELECTRODE MANIPULATOR
App. No. 12/238,265
→
ADJUSTABLE DEFLECTION OPTICS FOR ION IMPLANTATION
App. No. 12/212,507
→
SYSTEM AND METHOD OF BEAM ENERGY IDENTIFICATION FOR SINGLE WAFER ION IMPLANTATION
App. No. 12/190,736
→
DOUBLE PLASMA ION SOURCE
App. No. 12/183,961
→
ELEVATED TEMPERATURE RF ION SOURCE
App. No. 12/183,787
→
HYBRID ION SOURCE/MULTIMODE ION SOURCE
App. No. 12/184,082
→
METHOD AND APPARATUS FOR MEASUREMENT OF BEAM ANGLE IN ION IMPLANTATION
App. No. 12/176,748
→
SYSTEM AND METHOD FOR REDUCING PARTICLES AND CONTAMINATION BY MATCHING BEAM COMPLEMENTARY APERTURE SHAPES TO BEAM SHAPES
App. No. 12/146,122
→
SYSTEM AND METHOD OF CONTROLLING BROAD BEAM UNIFORMITY
App. No. 12/145,713
→
METHODS FOR IMPLANTING B22HX AND ITS IONIZED LOWER MASS BYPRODUCTS
App. No. 12/142,081
→
GAS BEARING ELECTROSTATIC CHUCK
App. No. 12/113,091
→
LOW CONTAMINATION, LOW ENERGY BEAMLINE ARCHITECTURE FOR HIGH CURRENT ION IMPLANTATION
App. No. 12/108,890
→
EXTRACTION ELECTRODE SYSTEM FOR HIGH CURRENT ION IMPLANTER
App. No. 12/050,594
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METHODS FOR IN SITU SURFACE TREATMENT IN AN ION IMPLANTATION SYSTEM
App. No. 12/030,306
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STRUCTURES AND METHODS FOR MEASURING BEAM ANGLE IN AN ION IMPLANTER
App. No. 11/947,632
→
PLASMA ELECTRON FLOOD FOR ION BEAM IMPLANTER
App. No. 11/935,738
→
BROAD RIBBON BEAM ION IMPLANTER ARCHITECTURE WITH HIGH MASS-ENERGY CAPABILITY
App. No. 11/932,117
→
LOW-COST ELECTROSTATIC CLAMP WITH FAST DE-CLAMP TIME
App. No. 11/924,166
→
WORK-PIECE PROCESSING SYSTEM
App. No. 11/765,499
→
BEAM ANGLE ADJUSTMENT IN ION IMPLANTERS
App. No. 11/757,063
→
METHOD AND SYSTEM FOR ION BEAM PROFILING
App. No. 11/742,178
→
DOSE UNIFORMITY CORRECTION TECHNIQUE
App. No. 11/739,314
→
WORKPIECE GRIPPING DEVICE
App. No. 11/687,184
→
ULTRAVIOLET ASSISTED PORE SEALING OF POROUS LOW K DIELECTRIC FILMS
App. No. 11/702,465
→
SYSTEM AND METHOD FOR TWO-DIMENSIONAL BEAM SCAN ACROSS A WORKPIECE OF AN ION IMPLANTER
App. No. 11/644,623
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WIDE AREA RADIO FREQUENCY PLASMA APPARATUS FOR PROCESSING MULTIPLE SUBSTRATES
App. No. 11/635,227
→
SLIDING WAFER RELEASE GRIPPER / WAFER PEELING GRIPPER
App. No. 11/582,814
→
SENSOR FOR ION IMPLANTER
App. No. 11/548,295
→
COMBINATION LOAD LOCK FOR HANDLING WORKPIECES
App. No. 11/432,923
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APPARATUS AND PROCESS FOR TREATING DIELECTRIC MATERIALS
App. No. 11/155,525
→
IN-SITU ABSOLUTE MEASUREMENT PROCESS AND APPARATUS FOR FILM THICKNESS, FILM REMOVAL RATE, AND REMOVAL ENDPOINT PREDICTION
App. No. 11/053,731
→
METHOD AND SYSTEM FOR DETECTION OF SOLID MATERIALS IN A PLASMA USING AN ELECTROMAGNETIC CIRCUIT
App. No. 10/708,251
→
GAS DISTRIBUTION PLATE ASSEMBLY FOR PLASMA REACTORS
App. No. 10/755,617
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SEGMENTED RESONANT ANTENNA FOR RADIO FREQUENCY INDUCTIVELY COUPLED PLASMAS
App. No. 10/702,368
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THICK FILM HEATER FOR A POPCORN POPPER
App. No. 10/077,329
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