Low contamination, low energy beamline architecture for high current ion implantation
An ion implantation system comprising an ion source that generates an ion beam along a beam path, a mass analyzer component downstream of the ion source that performs mass analysis and angle correction on the ion beam, a resolving aperture electrode comprising at least one electrode downstream of the mass analyzer component and along the beam path having a size and shape according to a selected mass resolution and a beam envelope, a deflection element downstream of the resolving aperture electrode that changes the path of the ion beam exiting the deflection element, a deceleration electrode downstream of the deflection element that decelerates the ion beam, a support platform within an end station for retaining and positioning a workpiece which is implanted with charged ions, and wherein the end station is mounted approximately eight degrees counterclockwise so that the deflected ion beam is perpendicular to the workpiece.
1. An ion implantation system comprising:
an ion source configured to generate an ion beam along a beam path;
a mass analyzer component downstream of the ion source configured to perform mass analysis on the ion beam;
a resolving aperture downstream of the mass analyzer component configured to pass a portion of the ion beam traveling along a beamline axis;
an endstation process chamber downstream of the resolving aperture, the endstation process chamber configured to rotate about the beam line axis, thereby defining an endstation workpiece axis therein;
a deflection element downstream of the resolving aperture configured to change an angle of the ion beam exiting the deflection element, thereby deflecting the ion beam off of the beamline axis onto a deflection axis;
a deceleration electrode downstream of the deflection element configured to decelerate the ion beam along the deflection axis; and
a support platform configured to retain and position a workpiece for implantation of charged ions of the ion beam;
wherein the deflection element and the deceleration electrode reside within the endstation process chamber, but do not rotate with the endstation process chamber, and
wherein the support platform resides within the endstation process chamber and does rotate with the endstation process chamber.
2. The ion implantation system of claim 1 , wherein the endstation process chamber is configured to rotate about the beamline axis so that the endstation workpiece axis aligns with the deflection axis, resulting in the ion beam being directed normal to the workpiece and facilitating a zero angle implant of the workpiece.
3. The ion implantation system of claim 1 , wherein the endstation process chamber is configured to rotate about the beamline axis so that the endstation workpiece axis neither aligns with the beamline axis nor the deflection axis, wherein an angular deviation between the endstation workpiece axis and the deflection axis reflects a non-zero angle implant of the workpiece.
4. The ion implantation system of claim 1 , wherein the endstation process chamber comprises:
a rotary female portion; and
a rotary male portion operably engaged with the rotary female portion,
wherein a rotation of the rotary female portion causes the entire endstation process chamber to rotate with respect to the beamline axis, and
wherein the rotary male portion is configured to rotate with respect to the rotary female portion.
5. The ion implantation system of claim 4 , further comprising a controller operably coupled to the deflection element and the rotary female portion of the endstation process chamber, wherein the controller is operable to deactivate the deflection element and dictate a first orientation of the rotary female portion in a first mode, and activate the deflection element and dictate a second, different orientation of the rotary female portion in a second mode.