IP Library › Assignment 063270/0277
Patent Assignment
Reel/Frame 063270/0277

RELEASE OF SECURITY INTEREST

Recorded: 2023-04-07 Received: 2023-04-07 Pages: 37
Assignor
Assignee
AXCELIS TECHNOLOGIES, INC.
108 CHERRY HILL DRIVE, BEVERLY, MA, 01915, UNITED STATES
Covered Applications (100)
STEPPED INDIRECTLY HEATED CATHODE WITH IMPROVED SHIELDING
App. No. 63/040,724
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SYSTEM AND METHOD FOR EXTENDING A LIFETIME OF AN ION SOURCE FOR MOLECULAR CARBON IMPLANTS
App. No. 16/887,571
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CHARGE STRIPPING FOR ION IMPLANTATION SYSTEMS
App. No. 16/887,446
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HIGH POWER WAFER COOLING
App. No. 16/860,386
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MULTIPLE ARC CHAMBER SOURCE
App. No. 16/850,066
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LIQUID METAL ION SOURCE
App. No. 16/824,069
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METHOD OF MIXING UPSTREAM AND DOWNSTREAM CURRENT MEASUREMENTS FOR INFERENCE OF THE BEAM CURRENT AT THE BEND OF AN OPTICAL ELEMENT FOR REALTIME DOSE CONTROL
App. No. 16/791,308
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APPARATUS AND METHOD FOR METAL CONTAMINATION CONTROL IN AN ION IMPLANTATION SYSTEM USING CHARGE STRIPPING MECHANISM
App. No. 62/971,473
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SCAN AND CORRECTOR MAGNET DESIGNS FOR HIGH THROUGHPUT SCANNED BEAM ION IMPLANTER
App. No. 16/720,499
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SUBSTRATE SUPPORT HAVING CUSTOMIZABLE AND REPLACEABLE FEATURES FOR ENHANCED BACKSIDE CONTAMINATION PERFORMANCE
App. No. 16/549,239
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METHOD OF ENHANCING THE ENERGY AND BEAM CURRENT ON RF BASED IMPLANTER
App. No. 16/544,000
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TOXIC OUTGAS CONTROL POST PROCESS
App. No. 16/509,915
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SYSTEM AND METHOD FOR EXTENDING A LIFETIME OF AN ION SOURCE OBJECT FOR MOLECULAR CARBON IMPLANTS
App. No. 62/857,883
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CHARGE STRIPPING FOR ION IMPLANTATION SYSTEMS
App. No. 62/853,945
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HYDROGEN BLEED GAS FOR AN ION SOURCE HOUSING
App. No. 16/409,423
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HIGH POWER WAFER COOLING
App. No. 62/841,272
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MULTIPLE ARC CHAMBER SOURCE
App. No. 62/834,667
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IN-SITU WAFER TEMPERATURE MEASUREMENT AND CONTROL
App. No. 16/367,948
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LIQUID METAL ION SOURCE
App. No. 62/822,313
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METHOD OF MIXING UPSTREAM AND DOWNSTREAM CURRENT MEASUREMENTS FOR INFERENCE OF THE BEAM CURRENT AT THE BEND OF AN OPTICAL ELEMENT FOR REALTIME DOSE CONTROL
App. No. 62/806,173
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HYDROGEN GENERATOR FOR AN ION IMPLANTER
App. No. 16/252,884
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REDUCTION OF CONDENSED GASES ON CHAMBER WALLS VIA PURGE GAS DILUTION AND EVACUATION FOR SEMICONDUCTOR PROCESSING EQUIPMENT
App. No. 16/240,071
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REDUCTION OF CONDENSED GASES ON CHAMBER WALLS VIA HEATED CHAMBER HOUSING FOR SEMICONDUCTOR PROCESSING EQUIPMENT
App. No. 16/239,995
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METHOD FOR DECREASING COOL DOWN TIME WITH HEATED SYSTEM FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT
App. No. 16/229,572
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TETRODE EXTRACTION APPARATUS FOR ION SOURCE
App. No. 16/227,296
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WAFER SOAK TEMPERATURE READBACK AND CONTROL VIA THERMOCOUPLE EMBEDDED END EFFECTOR FOR SEMICONDUCTOR PROCESSING EQUIPMENT
App. No. 16/227,399
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SYSTEM AND METHOD OF ARC DETECTION USING DYNAMIC THRESHOLD
App. No. 16/225,298
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SCAN AND CORRECTOR MAGNET DESIGNS FOR HIGH THROUGHPUT SCANNED BEAM ION IMPLANTER
App. No. 16/218,884
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ION SOURCE WITH TAILORED EXTRACTION APERTURE SHAPE
App. No. 16/217,664
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FILM STABILIZATION THROUGH NOVEL MATERIALS MODIFICATION OF BEAMLINE COMPONENTS
App. No. 16/192,838
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SHALLOW ANGLE, MULTI-WAVELENGTH, MULTI-RECEIVER, ADJUSTABLE SENSITIVITY ALIGNER SENSOR FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT
App. No. 16/170,085
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SYSTEM AND METHOD FOR IN-SITU BEAMLINE FILM STABILIZATION OR REMOVAL IN THE AEF REGION
App. No. 16/152,439
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RF RESONATOR FOR ION BEAM ACCELERATION
App. No. 16/124,676
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SYSTEM AND METHOD FOR ALIGNING LIGHT-TRANSMITTING BIREFRINGENT WORKPIECES
App. No. 16/114,745
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SUBSTRATE SUPPORT HAVING CUSTOMIZABLE AND REPLACEABLE FEATURES FOR ENHANCED BACKSIDE CONTAMINATION PERFORMANCE
App. No. 62/722,359
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SCANNING MAGNET DESIGN WITH ENHANCED EFFICIENCY
App. No. 16/106,745
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LANTHANATED TUNGSTEN ION SOURCE AND BEAMLINE COMPONETS
App. No. 16/102,868
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LOW CONDUCTANCE SELF-SHIELDING INSULATOR FOR ION IMPLANTATION SYSTEMS
App. No. 16/100,645
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HYDROGEN CO-GAS WHEN USING ALUMINUM IODIDE AS AN ION SOURCE MATERIAL
App. No. 15/995,707
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HYDROGEN BLEED GAS FOR AN ION SOURCE HOUSING
App. No. 62/670,307
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WAFER COOLING SYSTEM AND METHOD
App. No. 15/951,495
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IN-SITU WAFER TEMPERATURE MEASUREMENT AND CONTROL
App. No. 62/650,832
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TWO-AXIS VARIABLE WIDTH MASS RESOLVING APERTURE WITH FAST ACTING SHUTTER MOTION
App. No. 15/909,318
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OUTGASSING IMPACT ON PROCESS CHAMBER REDUCTION VIA CHAMBER PUMP AND PURGE
App. No. 15/884,492
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HYDROGEN GENERATOR FOR AN ION IMPLANTER
App. No. 62/620,144
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ACTIVE WORKPIECE HEATING OR COOLING FOR AN ION IMPLANTATION SYSTEM
App. No. 15/866,209
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METHOD TO PROVIDE CONSISTENT ELECTROSTATIC CLAMPING THROUGH REAL TIME CONTROL OF ELECTROSTATIC CHARGE DEPOSITION IN AN ELECTROSTATIC CHUCK
App. No. 15/831,972
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PHOSPHINE CO-GAS FOR CARBON IMPLANTS
App. No. 15/807,652
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PHOSPHOROUS TRIFLUORIDE CO-GAS FOR CARBON IMPLANTS
App. No. 15/807,664
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SHALLOW ANGLE, MULTI-WAVELENGTH, MULTI-RECEIVER, ADJUSTABLE SENSITIVITY ALIGNER SENSOR FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT
App. No. 62/576,791
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WAFER TEMPERATURE CONTROL WITH CONSIDERATION TO BEAM POWER INPUT
App. No. 15/707,473
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ION IMPLANTATION SYSTEM HAVING BEAM ANGLE CONTROL IN DRIFT AND DECELERATION MODES
App. No. 15/637,538
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IMPLANTATION USING SOLID ALUMINUM IODIDE (ALI3) FOR PRODUCING ATOMIC ALUMINUM IONS AND IN SITU CLEANING OF ALUMINUM IODIDE AND ASSOCIATED BY-PRODUCTS
App. No. 15/627,989
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IMPLANTATION USING SOLID ALUMINUM IODIDE (ALI3) FOR PRODUCING ATOMIC ALUMINUM IONS AND IN SITU CLEANING OF ALUMINUM IODIDE AND ASSOCIATED BY-PRODUCTS
App. No. 15/627,952
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WAFER COOLING APPARATUS AND METHOD
App. No. 15/609,273
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ION SOURCE REPELLER SHIELD
App. No. 15/477,680
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ION SOURCE CATHODE SHIELD
App. No. 15/410,711
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MULTI-PIECE ELECTRODE APERTURE
App. No. 15/410,707
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ACTIVE WORKPIECE HEATING OR COOLING FOR AN ION IMPLANTATION SYSTEM
App. No. 62/444,620
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HIGH THROUGHPUT SERIAL WAFER HANDLING END STATION
App. No. 15/391,086
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TWO-AXIS VARIABLE WIDTH MASS RESOLVING APERTURE WITH FAST ACTING SHUTTER MOTION
App. No. 15/363,728
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SYSTEM FOR SEMICONDUCTOR WAFER RETENTION AND SENSING IN A VACUUM LOAD LOCK
App. No. 15/361,813
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LOW CONDUCTANCE SELF-SHIELDING INSULATOR FOR ION IMPLANTATION SYSTEMS
App. No. 15/350,832
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ION SOURCE LINER HAVING A LIP FOR ION IMPLANTATION SYSTEMS
App. No. 15/344,502
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INTEGRATED EMISSIVITY SENSOR ALIGNMENT CHARACTERIZATION
App. No. 15/281,757
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ADJUSTABLE CIRCUMFERENCE ELECTROSTATIC CLAMP
App. No. 15/281,540
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MULTIPLE DIAMETER IN-VACUUM WAFER HANDLING
App. No. 15/281,600
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IN-SITU CLEANING USING HYDROGEN PEROXIDE AS CO-GAS TO PRIMARY DOPANT OR PURGE GAS FOR MINIMIZING CARBON DEPOSITS IN AN ION SOURCE
App. No. 15/281,844
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IN SITU BEAM CURRENT MONITORING AND CONTROL IN SCANNED ION IMPLANTATION SYSTEMS
App. No. 15/258,723
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IMPLANTATION USING SOLID ALUMINUM IODIDE (ALI3) FOR PRODUCING ATOMIC ALUMINUM IONS AND IN SITU CLEANING OF ALUMINUM IODIDE AND ASSOCIATED BY-PRODUCTS
App. No. 62/352,673
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SYSTEM AND METHOD TO IMPROVE PRODUCTIVITY OF HYBRID SCAN ION BEAM IMPLANTERS
App. No. 14/979,663
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Combined Electrostatic Lens System for Ion Implantation
App. No. 14/978,089
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Beam Profiling Speed Enhancement for Scanned Beam Implanters
App. No. 14/978,120
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Combined Multipole Magnet and Dipole Scanning Magnet
App. No. 14/978,776
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Method of Measuring Vertical Beam Profile in an Ion Implantation System Having a Vertical Beam Angle Device
App. No. 14/972,334
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WAFER CLAMP DETECTION BASED ON VIBRATION OR ACOUSTIC CHARACTERISTIC ANALYSIS
App. No. 14/963,703
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SYSTEM AND METHOD FOR ELECTROSTATIC CLAMPING OF WORKPIECES
App. No. 14/855,667
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CAM ACTUATED FILAMENT CLAMP
App. No. 14/835,780
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HIGH THROUGHPUT COOLED ION IMPLANTATION SYSTEM AND METHOD
App. No. 14/817,893
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ANGULAR SCANNING USING ANGULAR ENERGY FILTER
App. No. 14/692,395
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INTEGRATED EXTRACTION ELECTRODE MANIPULATOR FOR ION SOURCE
App. No. 14/674,694
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BIPOLAR WAFER CHARGE MONITOR SYSTEM AND ION IMPLANTATION SYSTEM COMPRISING SAME
App. No. 14/631,066
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ION IMPLANTATION SYSTEM AND METHOD WITH VARIABLE ENERGY CONTROL
App. No. 14/584,252
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HIGH THROUGHPUT HEATED ION IMPLANTATION SYSTEM AND METHOD
App. No. 14/317,778
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Variable Electrode Pattern for Versatile Electrostatic Clamp Operation
App. No. 14/178,719
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CONSTANT MASS FLOW MULTI-LEVEL COOLANT PATH ELECTROSTATIC CHUCK
App. No. 14/178,795
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Multi Fluid Cooling System for Large Temperature Range Chuck
App. No. 14/178,681
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METHOD FOR ENHANCING BEAM UTILIZATION IN A SCANNED BEAM ION IMPLANTER
App. No. 14/168,770
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REDUCED TRACE METALS CONTAMINATION ION SOURCE FOR AN ION IMPLANTATION SYSTEM
App. No. 14/135,754
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METHOD FOR MEASURING TRANSVERSE BEAM INTENSITY DISTRIBUTION
App. No. 14/086,578
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IMPLANT-INDUCED DAMAGE CONTROL IN ION IMPLANTATION
App. No. 14/013,728
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Multi-Resistivity Johnsen-Rahbek Electrostatic Clamp
App. No. 13/930,220
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OPTICAL HEAT SOURCE WITH RESTRICTED WAVELENGTHS FOR PROCESS HEATING
App. No. 13/923,955
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WORKPIECE CARRIER
App. No. 13/915,149
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EXTRACTION ELECTRODE ASSEMBLY VOLTAGE MODULATION IN AN ION IMPLANTATION SYSTEM
App. No. 13/886,963
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CHARGE INTEGRATION BASED ELECTROSTATIC CLAMP HEALTH MONITOR
App. No. 13/729,524
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METHOD AND APPARATUS FOR IMPROVED UNIFORMITY CONTROL WITH DYNAMIC BEAM SHAPING
App. No. 13/713,251
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SYSTEM AND METHOD FOR ION IMPLANTATION WITH IMPROVED PRODUCTIVITY AND UNIFORMITY
App. No. 13/625,277
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IN-VACUUM HIGH SPEED PRE-CHILL AND POST-HEAT STATIONS
App. No. 13/566,013
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Inert Atmospheric Pressure Pre-Chill and Post-Heat
App. No. 13/485,186
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