Method and apparatus for improved uniformity control with dynamic beam shaping
The present invention relates to a method and apparatus for varying the cross-sectional shape of an ion beam, as the ion beam is scanned over the surface of a workpiece, to generate a time-averaged ion beam having an improved ion beam current profile uniformity. In one embodiment, the cross-sectional shape of an ion beam is varied as the ion beam moves across the surface of the workpiece. The different cross-sectional shapes of the ion beam respectively have different beam profiles (e.g., having peaks at different locations along the beam profile), so that rapidly changing the cross-sectional shape of the ion beam results in a smoothing of the beam current profile (e.g., reduction of peaks associated with individual beam profiles) that the workpiece is exposed to. The resulting smoothed beam current profile provides for improved uniformity of the beam current and improved workpiece dose uniformity.
1. A method for uniformly doping a workpiece, comprising:
providing an ion beam;
scanning the ion beam over a workpiece;
varying a beam current density of the ion beam in a time-varying manner, to obtain a plurality of different ion beam current densities respectively having different beam current density profiles, as the ion beam moves across the surface of the workpiece during implantation;
measuring the beam current density profile and calculating a predicted dose uniformity; and
adjusting the focusing apparatus to dynamically sweep between first and second static focusing values if the calculated predicted dose uniformity violates an implant uniformity criterion.
2. The method of claim 1 , wherein varying the beam current density comprises varying a cross-sectional shape of the ion beam by varying the strength of a focusing apparatus.
3. The method of claim 2 , wherein the focusing apparatus rapidly varies the cross-sectional shape of the ion beam so as to obtain a time-averaged ion beam current profile comprising a time-average of the different beam current profiles of a plurality of different ion beam cross-sectional shapes.
4. The method of claim 2 , further comprising:
setting the focusing apparatus to the first static focusing value;
measuring a beam current density profile and calculating a predicted dose uniformity;
comparing the calculated predicted dose uniformity to the implant uniformity criterion; and
adjusting the first static focusing value if the calculated predicted dose uniformity violates the implant uniformity criterion.
5. The method of claim 1 , wherein the ratio of the frequency of varying the beam current density to the frequency of scanning the ion beam along the fast scan direction is greater than 10.
6. The method of claim 1 , further comprising generating a time-varying voltage configured to control a beam focusing apparatus that varies the beam current density of the ion beam in the time-varying manner.
7. The method of claim 1 , further comprising generating a time-varying current configured to control a beam focusing apparatus that varies the beam current density of the ion beam in the time-varying manner.
8. A method for uniformly doping a workpiece, comprising:
providing an ion beam;
scanning the ion beam over a workpiece;
varying a beam current density of the ion beam in a time-varying manner, to obtain a plurality of different ion beam current densities respectively having different beam current profiles, as the ion beam moves across the surface of the workpiece during implantation, wherein varying the beam current density comprises varying a cross-sectional shape of the ion beam by varying the strength of a focusing apparatus;
setting a focusing apparatus to a first static focusing value;
measuring a beam current density profile and calculating a first predicted dose uniformity;
comparing the calculated first predicted dose uniformity to an implant uniformity criterion;
adjusting the first static focusing value if the calculated first predicted dose uniformity violates the implant uniformity criterion;
measuring the beam current density profile and calculating a second predicted dose uniformity; and
adjusting the focusing apparatus to dynamically sweep between the first and second static focusing values if the calculated second predicted dose uniformity violates the implant uniformity criterion.