Patent Assignment
Reel/Frame 053375/0055
SECURITY INTEREST
Recorded: 2020-07-31
Received: 2020-07-31
Pages: 40
Assignor
AXCELIS TECHNOLOGIES, INC.
Executed: 2020-07-31
Assignee
SILICON VALLEY BANK, AS ADMINISTRATIVE AGENT
3003 TASMAN DRIVE, HF 150, SANTA CLARA, CA, 95054, UNITED STATES
Covered Applications
(100)
STEPPED INDIRECTLY HEATED CATHODE WITH IMPROVED SHIELDING
App. No. 63/040,724
→
SYSTEM AND METHOD FOR EXTENDING A LIFETIME OF AN ION SOURCE FOR MOLECULAR CARBON IMPLANTS
App. No. 16/887,571
→
CHARGE STRIPPING FOR ION IMPLANTATION SYSTEMS
App. No. 16/887,446
→
HIGH POWER WAFER COOLING
App. No. 16/860,386
→
MULTIPLE ARC CHAMBER SOURCE
App. No. 16/850,066
→
LIQUID METAL ION SOURCE
App. No. 16/824,069
→
METHOD OF MIXING UPSTREAM AND DOWNSTREAM CURRENT MEASUREMENTS FOR INFERENCE OF THE BEAM CURRENT AT THE BEND OF AN OPTICAL ELEMENT FOR REALTIME DOSE CONTROL
App. No. 16/791,308
→
APPARATUS AND METHOD FOR METAL CONTAMINATION CONTROL IN AN ION IMPLANTATION SYSTEM USING CHARGE STRIPPING MECHANISM
App. No. 62/971,473
→
SCAN AND CORRECTOR MAGNET DESIGNS FOR HIGH THROUGHPUT SCANNED BEAM ION IMPLANTER
App. No. 16/720,499
→
SUBSTRATE SUPPORT HAVING CUSTOMIZABLE AND REPLACEABLE FEATURES FOR ENHANCED BACKSIDE CONTAMINATION PERFORMANCE
App. No. 16/549,239
→
METHOD OF ENHANCING THE ENERGY AND BEAM CURRENT ON RF BASED IMPLANTER
App. No. 16/544,000
→
TOXIC OUTGAS CONTROL POST PROCESS
App. No. 16/509,915
→
SYSTEM AND METHOD FOR EXTENDING A LIFETIME OF AN ION SOURCE OBJECT FOR MOLECULAR CARBON IMPLANTS
App. No. 62/857,883
→
CHARGE STRIPPING FOR ION IMPLANTATION SYSTEMS
App. No. 62/853,945
→
HYDROGEN BLEED GAS FOR AN ION SOURCE HOUSING
App. No. 16/409,423
→
HIGH POWER WAFER COOLING
App. No. 62/841,272
→
MULTIPLE ARC CHAMBER SOURCE
App. No. 62/834,667
→
IN-SITU WAFER TEMPERATURE MEASUREMENT AND CONTROL
App. No. 16/367,948
→
LIQUID METAL ION SOURCE
App. No. 62/822,313
→
METHOD OF MIXING UPSTREAM AND DOWNSTREAM CURRENT MEASUREMENTS FOR INFERENCE OF THE BEAM CURRENT AT THE BEND OF AN OPTICAL ELEMENT FOR REALTIME DOSE CONTROL
App. No. 62/806,173
→
HYDROGEN GENERATOR FOR AN ION IMPLANTER
App. No. 16/252,884
→
REDUCTION OF CONDENSED GASES ON CHAMBER WALLS VIA PURGE GAS DILUTION AND EVACUATION FOR SEMICONDUCTOR PROCESSING EQUIPMENT
App. No. 16/240,071
→
REDUCTION OF CONDENSED GASES ON CHAMBER WALLS VIA HEATED CHAMBER HOUSING FOR SEMICONDUCTOR PROCESSING EQUIPMENT
App. No. 16/239,995
→
METHOD FOR DECREASING COOL DOWN TIME WITH HEATED SYSTEM FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT
App. No. 16/229,572
→
TETRODE EXTRACTION APPARATUS FOR ION SOURCE
App. No. 16/227,296
→
WAFER SOAK TEMPERATURE READBACK AND CONTROL VIA THERMOCOUPLE EMBEDDED END EFFECTOR FOR SEMICONDUCTOR PROCESSING EQUIPMENT
App. No. 16/227,399
→
SYSTEM AND METHOD OF ARC DETECTION USING DYNAMIC THRESHOLD
App. No. 16/225,298
→
SCAN AND CORRECTOR MAGNET DESIGNS FOR HIGH THROUGHPUT SCANNED BEAM ION IMPLANTER
App. No. 16/218,884
→
ION SOURCE WITH TAILORED EXTRACTION APERTURE SHAPE
App. No. 16/217,664
→
FILM STABILIZATION THROUGH NOVEL MATERIALS MODIFICATION OF BEAMLINE COMPONENTS
App. No. 16/192,838
→
SHALLOW ANGLE, MULTI-WAVELENGTH, MULTI-RECEIVER, ADJUSTABLE SENSITIVITY ALIGNER SENSOR FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT
App. No. 16/170,085
→
SYSTEM AND METHOD FOR IN-SITU BEAMLINE FILM STABILIZATION OR REMOVAL IN THE AEF REGION
App. No. 16/152,439
→
RF RESONATOR FOR ION BEAM ACCELERATION
App. No. 16/124,676
→
SYSTEM AND METHOD FOR ALIGNING LIGHT-TRANSMITTING BIREFRINGENT WORKPIECES
App. No. 16/114,745
→
SUBSTRATE SUPPORT HAVING CUSTOMIZABLE AND REPLACEABLE FEATURES FOR ENHANCED BACKSIDE CONTAMINATION PERFORMANCE
App. No. 62/722,359
→
SCANNING MAGNET DESIGN WITH ENHANCED EFFICIENCY
App. No. 16/106,745
→
LANTHANATED TUNGSTEN ION SOURCE AND BEAMLINE COMPONETS
App. No. 16/102,868
→
LOW CONDUCTANCE SELF-SHIELDING INSULATOR FOR ION IMPLANTATION SYSTEMS
App. No. 16/100,645
→
HYDROGEN CO-GAS WHEN USING ALUMINUM IODIDE AS AN ION SOURCE MATERIAL
App. No. 15/995,707
→
HYDROGEN BLEED GAS FOR AN ION SOURCE HOUSING
App. No. 62/670,307
→
WAFER COOLING SYSTEM AND METHOD
App. No. 15/951,495
→
IN-SITU WAFER TEMPERATURE MEASUREMENT AND CONTROL
App. No. 62/650,832
→
TWO-AXIS VARIABLE WIDTH MASS RESOLVING APERTURE WITH FAST ACTING SHUTTER MOTION
App. No. 15/909,318
→
OUTGASSING IMPACT ON PROCESS CHAMBER REDUCTION VIA CHAMBER PUMP AND PURGE
App. No. 15/884,492
→
HYDROGEN GENERATOR FOR AN ION IMPLANTER
App. No. 62/620,144
→
ACTIVE WORKPIECE HEATING OR COOLING FOR AN ION IMPLANTATION SYSTEM
App. No. 15/866,209
→
METHOD TO PROVIDE CONSISTENT ELECTROSTATIC CLAMPING THROUGH REAL TIME CONTROL OF ELECTROSTATIC CHARGE DEPOSITION IN AN ELECTROSTATIC CHUCK
App. No. 15/831,972
→
PHOSPHINE CO-GAS FOR CARBON IMPLANTS
App. No. 15/807,652
→
PHOSPHOROUS TRIFLUORIDE CO-GAS FOR CARBON IMPLANTS
App. No. 15/807,664
→
SHALLOW ANGLE, MULTI-WAVELENGTH, MULTI-RECEIVER, ADJUSTABLE SENSITIVITY ALIGNER SENSOR FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT
App. No. 62/576,791
→
WAFER TEMPERATURE CONTROL WITH CONSIDERATION TO BEAM POWER INPUT
App. No. 15/707,473
→
ION IMPLANTATION SYSTEM HAVING BEAM ANGLE CONTROL IN DRIFT AND DECELERATION MODES
App. No. 15/637,538
→
IMPLANTATION USING SOLID ALUMINUM IODIDE (ALI3) FOR PRODUCING ATOMIC ALUMINUM IONS AND IN SITU CLEANING OF ALUMINUM IODIDE AND ASSOCIATED BY-PRODUCTS
App. No. 15/627,989
→
IMPLANTATION USING SOLID ALUMINUM IODIDE (ALI3) FOR PRODUCING ATOMIC ALUMINUM IONS AND IN SITU CLEANING OF ALUMINUM IODIDE AND ASSOCIATED BY-PRODUCTS
App. No. 15/627,952
→
WAFER COOLING APPARATUS AND METHOD
App. No. 15/609,273
→
ION SOURCE REPELLER SHIELD
App. No. 15/477,680
→
ION SOURCE CATHODE SHIELD
App. No. 15/410,711
→
MULTI-PIECE ELECTRODE APERTURE
App. No. 15/410,707
→
ACTIVE WORKPIECE HEATING OR COOLING FOR AN ION IMPLANTATION SYSTEM
App. No. 62/444,620
→
HIGH THROUGHPUT SERIAL WAFER HANDLING END STATION
App. No. 15/391,086
→
TWO-AXIS VARIABLE WIDTH MASS RESOLVING APERTURE WITH FAST ACTING SHUTTER MOTION
App. No. 15/363,728
→
SYSTEM FOR SEMICONDUCTOR WAFER RETENTION AND SENSING IN A VACUUM LOAD LOCK
App. No. 15/361,813
→
LOW CONDUCTANCE SELF-SHIELDING INSULATOR FOR ION IMPLANTATION SYSTEMS
App. No. 15/350,832
→
ION SOURCE LINER HAVING A LIP FOR ION IMPLANTATION SYSTEMS
App. No. 15/344,502
→
INTEGRATED EMISSIVITY SENSOR ALIGNMENT CHARACTERIZATION
App. No. 15/281,757
→
ADJUSTABLE CIRCUMFERENCE ELECTROSTATIC CLAMP
App. No. 15/281,540
→
MULTIPLE DIAMETER IN-VACUUM WAFER HANDLING
App. No. 15/281,600
→
IN-SITU CLEANING USING HYDROGEN PEROXIDE AS CO-GAS TO PRIMARY DOPANT OR PURGE GAS FOR MINIMIZING CARBON DEPOSITS IN AN ION SOURCE
App. No. 15/281,844
→
IN SITU BEAM CURRENT MONITORING AND CONTROL IN SCANNED ION IMPLANTATION SYSTEMS
App. No. 15/258,723
→
IMPLANTATION USING SOLID ALUMINUM IODIDE (ALI3) FOR PRODUCING ATOMIC ALUMINUM IONS AND IN SITU CLEANING OF ALUMINUM IODIDE AND ASSOCIATED BY-PRODUCTS
App. No. 62/352,673
→
SYSTEM AND METHOD TO IMPROVE PRODUCTIVITY OF HYBRID SCAN ION BEAM IMPLANTERS
App. No. 14/979,663
→
Combined Electrostatic Lens System for Ion Implantation
App. No. 14/978,089
→
Beam Profiling Speed Enhancement for Scanned Beam Implanters
App. No. 14/978,120
→
Combined Multipole Magnet and Dipole Scanning Magnet
App. No. 14/978,776
→
Method of Measuring Vertical Beam Profile in an Ion Implantation System Having a Vertical Beam Angle Device
App. No. 14/972,334
→
WAFER CLAMP DETECTION BASED ON VIBRATION OR ACOUSTIC CHARACTERISTIC ANALYSIS
App. No. 14/963,703
→
SYSTEM AND METHOD FOR ELECTROSTATIC CLAMPING OF WORKPIECES
App. No. 14/855,667
→
CAM ACTUATED FILAMENT CLAMP
App. No. 14/835,780
→
HIGH THROUGHPUT COOLED ION IMPLANTATION SYSTEM AND METHOD
App. No. 14/817,893
→
ANGULAR SCANNING USING ANGULAR ENERGY FILTER
App. No. 14/692,395
→
INTEGRATED EXTRACTION ELECTRODE MANIPULATOR FOR ION SOURCE
App. No. 14/674,694
→
BIPOLAR WAFER CHARGE MONITOR SYSTEM AND ION IMPLANTATION SYSTEM COMPRISING SAME
App. No. 14/631,066
→
ION IMPLANTATION SYSTEM AND METHOD WITH VARIABLE ENERGY CONTROL
App. No. 14/584,252
→
HIGH THROUGHPUT HEATED ION IMPLANTATION SYSTEM AND METHOD
App. No. 14/317,778
→
Variable Electrode Pattern for Versatile Electrostatic Clamp Operation
App. No. 14/178,719
→
CONSTANT MASS FLOW MULTI-LEVEL COOLANT PATH ELECTROSTATIC CHUCK
App. No. 14/178,795
→
Multi Fluid Cooling System for Large Temperature Range Chuck
App. No. 14/178,681
→
METHOD FOR ENHANCING BEAM UTILIZATION IN A SCANNED BEAM ION IMPLANTER
App. No. 14/168,770
→
REDUCED TRACE METALS CONTAMINATION ION SOURCE FOR AN ION IMPLANTATION SYSTEM
App. No. 14/135,754
→
METHOD FOR MEASURING TRANSVERSE BEAM INTENSITY DISTRIBUTION
App. No. 14/086,578
→
IMPLANT-INDUCED DAMAGE CONTROL IN ION IMPLANTATION
App. No. 14/013,728
→
Multi-Resistivity Johnsen-Rahbek Electrostatic Clamp
App. No. 13/930,220
→
OPTICAL HEAT SOURCE WITH RESTRICTED WAVELENGTHS FOR PROCESS HEATING
App. No. 13/923,955
→
WORKPIECE CARRIER
App. No. 13/915,149
→
EXTRACTION ELECTRODE ASSEMBLY VOLTAGE MODULATION IN AN ION IMPLANTATION SYSTEM
App. No. 13/886,963
→
CHARGE INTEGRATION BASED ELECTROSTATIC CLAMP HEALTH MONITOR
App. No. 13/729,524
→
METHOD AND APPARATUS FOR IMPROVED UNIFORMITY CONTROL WITH DYNAMIC BEAM SHAPING
App. No. 13/713,251
→
SYSTEM AND METHOD FOR ION IMPLANTATION WITH IMPROVED PRODUCTIVITY AND UNIFORMITY
App. No. 13/625,277
→
IN-VACUUM HIGH SPEED PRE-CHILL AND POST-HEAT STATIONS
App. No. 13/566,013
→
Inert Atmospheric Pressure Pre-Chill and Post-Heat
App. No. 13/485,186
→