IP Library Granted Patent US 10,679,818
Granted Patent B2
US 10,679,818 · App. 16/100,645 · Granted Jun 9, 2020

Low conductance self-shielding insulator for ion implantation systems

Inventors: John F. Baggett (Amesbury, MA); Neil Colvin (Merrimack, NH)
Assignee: Axcelis Technologies, Inc.
H01J37/08H01J37/3171H01J2237/022H01J2237/0206H01J2237/038
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Quick Facts
Patent No.
US 10,679,818
App. No.
16/100,645
Granted
Jun 9, 2020
Kind
B2
Abstract

An insulator for an ion source is positioned between the apertured ground electrode and apertured suppression electrode. The insulator has an elongate body having a first end and a second end, where one or more features are defined in the elongate body and increase a gas conductance path along a surface of the elongate body from the first end to the second end. One or more of the features is an undercut extending generally axially or at a non-zero angle from an axis of the elongate body into the elongate body. One of the features can be a rib extending from a radius of the elongate body.

Claims (26)

1. An insulator, comprising an elongate body having a first end and a second end, wherein the elongate body has one or more features defined therein, and wherein the one or more features increase a gas conductance path from the first end to the second end.

2. The insulator of claim 1 , wherein one or more of the one or more features comprises an undercut extending generally axially into the elongate body.

3. The insulator of claim 2 , wherein the undercut extends from a position proximate to one or more of the first end and the second end toward the opposite of the respective first end and the second end.

4. The insulator of claim 2 , wherein the undercut is generally U-shaped.

5. The insulator of claim 1 , wherein one or more of the one or more features comprises an undercut extending generally radially into the elongate body.

6. The insulator of claim 5 , wherein the undercut extends from a position proximate to one or more of the first end and the second end toward the opposite of the respective first end and the second end.

7. The insulator of claim 5 , wherein the undercut is generally U-shaped.

8. The insulator of claim 1 , wherein one or more of the one or more features comprises an undercut extending into the elongate body at a non-zero angle from an axis of the elongate body.

9. The insulator of claim 8 , wherein the undercut extends from a position proximate to one or more of the first end and the second end toward the opposite of the respective first end and the second end.

10. The insulator of claim 1 , wherein the undercut provides an increased gas conductance path from the first end to the second end along a surface of the elongate body.

11. The insulator of claim 1 , wherein one or more of the one or more features comprise a rib extending from a radius of the elongate body.

12. The insulator of claim 11 , wherein one or more of the one or more features comprises an undercut extending into the elongate body at an acute angle from an axis of the elongate body, and wherein the undercut extends from a position proximate to one or more of the first end and the second end toward the opposite of the respective first end and the second end both the first end and second end each comprise an undercut.

13. The insulator of claim 1 , wherein the elongate body comprises a surface that is electrically insulative.

14. The insulator of claim 1 , wherein the elongate body is comprised of an electrically insulative material.

15. An ion source, comprising:

an apertured ground electrode;

an apertured suppression electrode; and

an insulator positioned between the apertured ground electrode and apertured suppression electrode, wherein the insulator comprises an elongate body having a first end and a second end, wherein the elongate body has one or more features defined therein, and wherein the one or more features increase a gas conductance path along a surface of the elongate body from the first end to the second end.

16. The ion source of claim 15 , wherein one or more of the one or more features comprises an undercut extending generally axially into the elongate body.

17. The ion source of claim 15 , wherein one or more of the one or more features comprises an undercut extending into the elongate body at a non-zero angle from an axis of the elongate body.

18. The ion source of claim 17 , wherein the undercut extends from a position proximate to one or more of the first end and the second end toward the opposite of the respective first end and the second end.

19. The ion source of claim 17 , wherein one or more of the one or more features comprise a rib extending from a radius of the elongate body.

20. A method of forming an insulator, comprising:

forming a body of the insulator out of insulative material;

forming one or more features in the body after the body is formed; and

curing the body once the one or more features are formed.

Assignments (2)
RELEASE OF SECURITY INTEREST Recorded Apr 7, 2023
From: SILICON VALLEY BANK A DIVISION OF FIRST-CITIZENS BANK & TRUST COMPANY
To: AXCELIS TECHNOLOGIES, INC.
Reel/Frame 063270/0277 →
SECURITY INTEREST Recorded Jul 31, 2020
From: AXCELIS TECHNOLOGIES, INC.
To: SILICON VALLEY BANK, AS ADMINISTRATIVE AGENT
Reel/Frame 053375/0055 →
Cited By (1)
US 12,221,689