Phosphine co-gas for carbon implants
Processes and systems for carbon ion implantation include utilizing phosphine as a co-gas with a carbon oxide gas in an ion source chamber. In one or more embodiments, carbon implantation with the phosphine co-gas is in combination with the lanthanated tungsten alloy ion source components, which advantageously results in minimal oxidation of the cathode and cathode shield, among other components within the ion source chamber.
1. A process for implanting carbon into a substrate, the process comprising:
ionizing a carbon oxide gas source and a co-gas comprising phosphine in an ion source chamber to produce carbon ions and phosphorous oxide;
detecting formation of phosphorous oxide based on analysis of atomic mass unit spectra;
determining a final ratio between the carbon oxide gas source and the co-gas comprising the phosphine when the phosphorous oxides are no longer detectable; and
implanting the carbon ions into the substrate.
2. The process of claim 1 , wherein the carbon oxide source comprises carbon suboxide, carbon monoxide, carbon dioxide, a carbon containing gas and an oxygen gas mixture or combinations thereof.
3. The process of claim 1 , wherein the ion source chamber comprises one or more components formed of or coated with lanthanum tungsten.
4. The process of claim 3 , wherein the one or more components are selected from the group consisting of a cathode, cathode shield, a repeller, a liner, an arc slit, a source chamber wall, a liner, aperture plates, extraction electrodes, and an arc chamber body.
5. The process of claim 1 , wherein the phosphine relative to the carbon oxide gas is at a ratio such that formation of the phosphorous oxides is at about zero.
6. The process of claim 3 , wherein the carbon oxide gas is carbon monoxide and reacts with the phosphine in accordance with reaction scheme I:
24CO+8PH 3 +4LaW→22C + +24OH+2CO+2La 2 O 3 +4W+P 4 O 10 +P 4 O 6 . I.
7. The process of claim 1 , wherein the lanthanated tungsten comprises lanthanum in an amount from 1 to 3% by weight.
8. A process for implanting carbon ions into a workpiece, the process comprising:
supplying a mixture of a carbon oxide gas and a phosphine gas to an ion source, wherein the ion source and an ion implantation system containing the ion source comprises a cathode, a cathode shield, and/or a repeller formed of or coated with lanthanum tungsten;
ionizing the carbon oxide gas and the phosphine gas with the ion source at a stoichiometry effective to create a feedstream of ionized carbon and a byproduct comprising phosphorous oxides;
extracting the ionized carbon within the plasma to form an ion beam; and
exposing the workpiece to the ion beam to implant the ionized carbon into the workpiece.
9. The process of claim 8 , wherein the carbon oxide gas is selected from the group of gases consisting of carbon monoxide, carbon dioxide, carbon suboxide, a carbon-containing gas and an oxygen gas mixture, and combinations thereof.
10. The process of claim 8 , wherein the phosphine gas relative to the carbon oxide gas is at a ratio such that formation of the phosphorous oxides is at about zero.
11. The process of claim 8 , further comprising evacuating the phosphorous oxides from the ion source chamber.
12. The process of claim 8 , wherein the carbon oxide gas is carbon monoxide and reacts with the phosphine gas in accordance with reaction scheme I:
24CO+8PH 3 +4LaW→22C + +24OH+2CO+2La 2 O 3 +4W+P 4 O 10 +P 4 O 6 . I.
13. The process of claim 11 , wherein the lanthanated tungsten comprises lanthanum in an amount from 1 to 3% by weight of the component or the coating, respectively.