Film stabilization through novel materials modification of beamline components
An electrically conductive component is provided for a near-wafer environment of an ion implantation system, where the component has a carbon-based substrate having a microscopically textured surface overlying a macroscopically textured surface. The macroscopically textured surface is a mechanically, chemically, or otherwise roughened surface. The microscopically textured surface can be a converted surface formed by a chemical reaction forming a non-stoichiometric silicon and carbon surface. The one or more components can be a dose cup, exit aperture, and tunnel wall. The carbon-based substrate can be graphite. The microscopically textured surface can be a modified graphite surface. No defined interface layer exists between the microscopically textured surface and macroscopically textured surface. The carbon-based graphite is selected based on a final porosity and grain size of the graphite.
1. A component for an ion implantation system, the component comprising a carbon-based substrate having a microscopically textured surface overlying a macroscopically textured surface, wherein the macroscopically textured surface comprises a mechanically roughened surface having a machined pattern of narrow grooves.
2. The component of claim 1 , wherein the microscopically textured surface comprises a chemically converted surface.
3. The component of claim 1 , wherein the component is positioned in a near-wafer environment is downstream of an angular energy filter.
4. The component of claim 3 , wherein the near-wafer environment is downstream of an angular energy filter and within approximately 10 cm of a workpiece plane associated with the workpiece.
5. The component of claim 1 , wherein the component comprises one of a dose cup, exit aperture, and a tunnel wall.
6. The component of claim 1 , wherein there is no defined interface layer between the microscopically textured surface and macroscopically textured surface.
7. The component of claim 1 , wherein the microscopically textured surface comprises a converted surface.
8. The component of claim 7 , wherein the converted surface is formed by a chemical reaction forming a non-stoichiometric silicon and carbon surface.
9. The component of claim 1 , wherein the carbon-based substrate comprises graphite.
10. The component of claim 9 , wherein the microscopically textured surface comprises a modified graphite (MG) surface.
11. The component of claim 10 , wherein the carbon-based substrate is selected based on a final porosity and grain size of the graphite.
12. A method for forming a component for an ion implantation system, the method comprising:
providing a carbon-based substrate having a surface;
selectively macroscopically texturing one or more regions of the surface of the substrate by machining a pattern of narrow grooves in the one or more regions of the surface; and
microscopically texturing the surface of the substrate after macroscopically texturing the one or more regions of the surface of the substrate.
13. The method of claim 12 , wherein the microscopically texturing the surface comprises a chemically converting all of the surface.
14. The method of claim 12 , wherein the carbon-based graphite is selected based on a final porosity and grain size of the graphite.
15. The method of claim 12 , wherein the component comprises one or more of a dose cup, exit aperture, and a tunnel wall.
16. The method of claim 12 , wherein microscopically texturing the surface comprises forming a modified graphite (MG) surface.
17. The method of claim 12 , wherein microscopically texturing the surface comprises a chemical reaction forming a non-stoichiometric silicon and carbon surface.
18. The component of claim 1 , wherein the machined pattern of narrow grooves have dimensions on the order of approximately 0.1 mm wide by 0.1 mm deep and spaced approximately 0.5 mm apart.
19. The method of claim 12 , wherein the pattern of narrow grooves have dimensions on the order of approximately 0.1 mm wide by 0.1 mm deep and spaced approximately 0.5 mm apart.
20. The method of claim 12 , wherein selectively macroscopically texturing the one or more regions of the surface of the substrate further comprises applying a mask over areas of the component not within the one or more regions of the surface and grit blasting the surface.