Optical heat source with restricted wavelengths for process heating
View Patent ↗A semiconductor manufacturing system or process, such as an ion implantation system, apparatus and method, including a component or step for heating a semiconductor workpiece are provided. An optical heat source emits light energy to heat the workpiece. The optical heat source is configured to provide minimal or reduced emission of non-visible wavelengths of light energy and emit light energy at a wavelength in a maximum energy light absorption range of the workpiece.
1. An ion implantation system, comprising:
a process chamber;
an ion implantation apparatus configured to provide a beam of ions to a workpiece positioned in the process chamber;
an optical heat source configured to selectively emit light wavelengths with a predetermined range of selected wavelengths; and
an internally reflective optical guide coupled to the optical heat source for directing the light wavelengths in a direction toward the workpiece to heat the workpiece.
2. The ion implantation system of claim 1 , further comprising a load lock chamber operatively coupled to the process chamber.
3. The ion implantation system of claim 1 , wherein the heating source comprises a plurality of light-emitting diodes or a wavelength-specific lamp.
4. The ion implantation system of claim 3 , wherein the light-emitting diodes are deep blue or ultraviolet light-emitting diodes.
5. The ion implantation system of claim 1 , wherein the internally reflective optical guide is configured to absorb or reflect non-visible wavelengths of light energy to provide minimal non-visible wavelengths of light energy for heating the workpiece.
6. An apparatus for the processing of a semiconductor workpiece, comprising:
a chamber configured to contain the semiconductor workpiece;
a workpiece support configured to support the workpiece within the chamber;
an optical heat source for emitting optical energy, the optical heat source configured to emit selective wavelengths within a predetermined range of wavelengths; and
an internally reflective optical guide coupled to the optical heat source for directing the optical energy in a direction toward the workpiece to heat the workpiece.
7. The apparatus of claim 6 , wherein the optical heat source comprises a plurality of light emitting diodes or a wavelength specific lamp.
8. The apparatus of claim 6 , wherein the optical energy has a wavelength of from about 400 nm to about 1000 nm.
9. The apparatus of claim 6 , wherein the optical heat source further includes a re-radiative material.
10. A method for processing a semiconductor workpiece, comprising:
placing the workpiece in a load lock chamber;
heating the workpiece with an optical heating source, the heating source configured to emit selective wavelengths within a predetermined range of wavelengths via an internally reflective optical guide for directing the optical energy in a direction toward the workpiece to heat the workpiece.
11. The method of claim 10 , wherein the step of emitting selective wavelengths includes reducing emission of non-visible wavelengths of optical energy by absorbing or reflecting selected wavelengths of optical energy emitted from the optical heating source.
12. The method of claim 10 , wherein the step of heating the workpiece includes heating to a temperature of from about 25° C. to about 95° C.