Patent Assignment
Reel/Frame 022562/0758
CONSENT AND LICENSE AGREEMENT
Recorded: 2009-04-17
Received: 2009-04-17
Pages: 71
Assignor
AXCELIS TECHNOLOGIES, INC.
Executed: 2009-03-30
Assignee
SEN CORPORATION
4-10-1 YOGA, SETAGAYA-KU, TOKYO, JPX, 158-0097, JAPAN
Covered Applications
(100)
NON-CONDENSING THERMOS CHUCK
App. No. 12/358,788
→
ION BEAM ANGLE CALIBRATION AND EMITTANCE MEASUREMENT SYSTEM FOR RIBBON BEAMS
App. No. 12/357,688
→
ENHANCED LOW ENERGY ION BEAM TRANSPORT IN ION IMPLANTATION
App. No. 12/357,973
→
ELECTROSTATIC CHUCK SHIELDING MECHANISM
App. No. 12/340,936
→
ION IMPLANTATION WITH DIMINISHED SCANNING FIELD EFFECTS
App. No. 12/338,644
→
DE-CLAMPING WAFERS FROM AN ELECTROSTATIC CHUCK
App. No. 12/331,619
→
ELECTROSTATIC CHUCK WITH COMPLIANT COAT
App. No. 12/331,813
→
WAFER GROUNDING METHOD FOR ELECTROSTATIC CLAMPS
App. No. 12/262,399
→
ELECTROSTATIC CHUCK GROUND PUNCH
App. No. 12/262,990
→
HYBRID SCANNING FOR ION IMPLANTATION
App. No. 12/245,866
→
EXTRACTION ELECTRODE MANIPULATOR
App. No. 12/238,265
→
ADJUSTABLE DEFLECTION OPTICS FOR ION IMPLANTATION
App. No. 12/212,507
→
ELEVATED TEMPERATURE RF ION SOURCE
App. No. 12/183,787
→
WORKPIECE GRIPPING INTEGRITY SENSOR
App. No. 12/178,014
→
METHOD AND APPARATUS FOR MEASUREMENT OF BEAM ANGLE IN ION IMPLANTATION
App. No. 12/176,748
→
SYSTEM AND METHOD FOR REDUCING PARTICLES AND CONTAMINATION BY MATCHING BEAM COMPLEMENTARY APERTURE SHAPES TO BEAM SHAPES
App. No. 12/146,122
→
LOW-INERTIA MULTI-AXIS MULTI-DIRECTIONAL MECHANICALLY SCANNED ION IMPLANTATION SYSTEM
App. No. 61/075,614
→
SYSTEM AND METHOD OF CONTROLLING BROAD BEAM UNIFORMITY
App. No. 12/145,713
→
POST-DECEL MAGNETIC ENERGY FILTER FOR ION IMPLANTATION SYSTEMS
App. No. 61/075,657
→
SYSTEM AND METHOD OF PERFORMING UNIFORM DOSE IMPLANTATION UNDER ADVERSE CONDITIONS
App. No. 61/049,717
→
LOW CONTAMINATION, LOW ENERGY BEAMLINE ARCHITECTURE FOR HIGH CURRENT ION IMPLANTATION
App. No. 12/108,890
→
EXTRACTION ELECTRODE SYSTEM FOR HIGH CURRENT ION IMPLANTER
App. No. 12/050,594
→
METHODS FOR IN SITU SURFACE TREATMENT IN AN ION IMPLANTATION SYSTEM
App. No. 12/030,306
→
REMOTE WAFER PRESENCE DETECTION WITH PASSIVE RFID
App. No. 12/022,300
→
STRUCTURES AND METHODS FOR MEASURING BEAM ANGLE IN AN ION IMPLANTER
App. No. 11/947,632
→
PLASMA ELECTRON FLOOD FOR ION BEAM IMPLANTER
App. No. 11/935,738
→
BROAD RIBBON BEAM ION IMPLANTER ARCHITECTURE WITH HIGH MASS-ENERGY CAPABILITY
App. No. 11/932,117
→
LOW-COST ELECTROSTATIC CLAMP WITH FAST DE-CLAMP TIME
App. No. 11/924,166
→
WORKPIECE HANDLING SCAN ARM FOR ION IMPLANTATION SYSTEM
App. No. 11/840,888
→
ION IMPLANTER HAVING COMBINED HYBRID AND DOUBLE MECHANICAL SCAN ARCHITECTURE
App. No. 11/831,744
→
WORK-PIECE PROCESSING SYSTEM
App. No. 11/765,499
→
BEAM ANGLE ADJUSTMENT IN ION IMPLANTERS
App. No. 11/757,063
→
AIRFLOW MANAGEMENT FOR PARTICLE ABATEMENT IN SEMICONDUCTOR MANUFACTURING EQUIPMENT
App. No. 11/752,118
→
METHOD AND SYSTEM FOR ION BEAM PROFILING
App. No. 11/742,178
→
DOSE UNIFORMITY CORRECTION TECHNIQUE
App. No. 11/739,314
→
ION BEAM SCANNING CONTROL METHODS AND SYSTEMS FOR ION IMPLANTATION UNIFORMITY
App. No. 11/784,709
→
ION SOURCE ARC CHAMBER SEAL
App. No. 11/689,769
→
WORKPIECE GRIPPING DEVICE
App. No. 11/687,184
→
SYSTEMS AND METHODS FOR BEAM ANGLE ADJUSTMENT IN ION IMPLANTERS
App. No. 11/716,622
→
VARIABLE FREQUENCY ELECTROSTATIC CLAMPING
App. No. 11/704,033
→
OFFSET PHASE OPERATION ON A MULTIPHASE AC ELECTROSTATIC CLAMP
App. No. 11/703,427
→
METHOD OF REDUCING PARTICLE CONTAMINATION FOR ION IMPLANTERS
App. No. 11/648,979
→
SYSTEM AND METHOD FOR TWO-DIMENSIONAL BEAM SCAN ACROSS A WORKPIECE OF AN ION IMPLANTER
App. No. 11/644,623
→
ANNULUS CLAMPING AND BACKSIDE GAS COOLED ELECTROSTATIC CHUCK
App. No. 11/641,334
→
USE OF ION INDUCED LUMINESCENCE (IIL) AS FEEDBACK CONTROL FOR ION IMPLANTATION
App. No. 11/633,694
→
SLIDING WAFER RELEASE GRIPPER / WAFER PEELING GRIPPER
App. No. 11/582,814
→
SENSOR FOR ION IMPLANTER
App. No. 11/548,295
→
Segmented resonant antenna for radio frequency inductively coupled plasmas
App. No. 11/544,971
→
CLOSED LOOP DOSE CONTROL FOR ION IMPLANTATION
App. No. 11/543,346
→
METHODS FOR BEAM CURRENT MODULATION BY ION SOURCE PARAMETER MODULATION
App. No. 11/541,087
→
BEAM LINE ARCHITECTURE FOR ION IMPLANTER
App. No. 11/540,064
→
METHODS FOR RAPIDLY SWITCHING OFF AN ION BEAM
App. No. 11/540,449
→
BROAD BEAM ION IMPLANTATION ARCHITECTURE
App. No. 11/540,897
→
BEAM TUNING WITH AUTOMATIC MAGNET POLE ROTATION FOR ION IMPLANTERS
App. No. 11/523,144
→
SYSTEM FOR MAGNETIC SCANNING AND CORRECTION OF AN ION BEAM
App. No. 11/523,148
→
SYSTEMS AND METHODS FOR BEAM ANGLE ADJUSTMENT IN ION IMPLANTERS
App. No. 11/520,190
→
DEPOSITION REDUCTION SYSTEM FOR AN ION IMPLANTER
App. No. 11/506,998
→
THROUGHPUT ENHANCEMENT FOR SCANNED BEAM ION IMPLANTERS
App. No. 11/503,685
→
PARTICULATE PREVENTION IN ION IMPLANTATION
App. No. 11/445,667
→
BEAM STOP AND BEAM TUNING METHODS
App. No. 11/445,722
→
SYSTEM AND METHOD OF ION BEAM CONTROL IN RESPONSE TO A BEAM GLITCH
App. No. 11/441,609
→
ION SOURCE
App. No. 11/437,547
→
COMBINATION LOAD LOCK FOR HANDLING WORKPIECES
App. No. 11/432,923
→
RIBBON BEAM ION IMPLANTER CLUSTER TOOL
App. No. 11/432,977
→
LOAD LOCK CONTROL
App. No. 11/409,759
→
METHOD OF MEASURING ION BEAM POSITION
App. No. 11/390,039
→
ARC quenching circuit to mitigate ion beam disruption
App. No. 60/781,977
→
ION BEAM MONITORING IN AN ION IMPLANTER USING AN IMAGING DEVICE
App. No. 11/374,945
→
Ion implanter having a superconducting magnet
App. No. 11/343,760
→
APPLICATION OF DIGITAL FREQUENCY AND PHASE SYNTHESIS FOR CONTROL OF ELECTRODE VOLTAGE PHASE IN A HIGH-ENERGY ION IMPLANTATION MACHINE, AND A MEANS FOR ACCURATE CALIBRATION OF ELECTRODE VOLTAGE PHASE
App. No. 11/334,265
→
ION BEAM ANGLE MEASUREMENT SYSTEMS AND METHODS EMPLOYING VARIED ANGLE SLOT ARRAYS FOR ION IMPLANTATION SYSTEMS
App. No. 11/313,319
→
ION BEAM ANGLE MEASUREMENT SYSTEMS AND METHODS FOR ION IMPLANTATION SYSTEMS
App. No. 11/299,593
→
BEAM CURRENT STABILIZATION UTILIZING GAS FEED CONTROL LOOP
App. No. 11/290,346
→
MEANS TO ESTABLISH ORIENTATION OF ION BEAM TO WAFER AND CORRECT ANGLE ERRORS
App. No. 11/290,344
→
ION IMPLANTATION BEAM ANGLE CALIBRATION
App. No. 11/288,908
→
SYSTEMS AND METHODS THAT MITIGATE CONTAMINATION AND MODIFY SURFACE CHARACTERISTICS DURING ION IMPLANTATION PROCESSES THROUGH THE INTRODUCTION OF GASES
App. No. 11/273,039
→
ION IMPLANTER WITH CONTAMINANT COLLECTING SURFACE
App. No. 11/272,529
→
ION BEAM PROFILER
App. No. 11/235,754
→
WORKPIECE TRANSFER DEVICE
App. No. 11/219,281
→
METHOD AND APPARATUS FOR SCANNING A WORKPIECE IN A VACUUM CHAMBER OF AN ION BEAM IMPLANTER
App. No. 11/173,494
→
WORKPIECE HANDLING ALIGNMENT SYSTEM
App. No. 11/147,973
→
WAFER SCANNING SYSTEM WITH RECIPROCATING ROTARY MOTION UTILIZING SPRINGS AND COUNTERWEIGHTS
App. No. 11/099,022
→
MULTICHANNEL ION GUN
App. No. 11/074,434
→
HIGH CONDUCTANCE ION SOURCE
App. No. 11/074,435
→
ION SOURCE FOR USE IN AN ION IMPLANTER
App. No. 11/049,913
→
BIASED ELECTROSTATIC DEFLECTOR
App. No. 11/047,238
→
PARTS AUTHENTICATION EMPLOYING RADIO FREQUENCY IDENTIFICATION
App. No. 11/043,758
→
IN-SITU CLEANING OF BEAM DEFINING APERTURES IN AN ION IMPLANTER
App. No. 11/037,491
→
ION BEAM SCANNING CONTROL METHODS AND SYSTEMS FOR ION IMPLANTATION UNIFORMITY
App. No. 11/029,052
→
REMOVING BYPRODUCTS OF PHYSICAL AND CHEMICAL REACTIONS IN AN ION IMPLANTER
App. No. 11/022,060
→
METHOD AND APPARATUS FOR ION BEAM PROFILING
App. No. 11/012,585
→
METHOD OF CORRECTION FOR WAFER CRYSTAL CUT ERROR IN SEMICONDUCTOR PROCESSING
App. No. 11/006,840
→
Optimization of beam utilization
App. No. 11/000,023
→
Dose uniformity during scanned ion implantation
App. No. 10/983,461
→
SYSTEMS AND METHODS FOR ION BEAM FOCUSING
App. No. 10/967,855
→
BELLOWS LINER FOR AN ION BEAM IMPLANTER
App. No. 10/956,817
→
ION BEAM UTILIZATION DURING SCANNED ION IMPLANTATION
App. No. 10/944,989
→
CONTROLLED DOSE ION IMPLANTATION
App. No. 10/940,263
→
ION BEAM MEASUREMENT SYSTEMS AND METHODS FOR ION IMPLANT DOSE AND UNIFORMITY CONTROL
App. No. 10/917,597
→
SCANNING SYSTEMS AND METHODS FOR PROVIDING IONS FROM AN ION BEAM TO A WORKPIECE
App. No. 10/917,997
→