System for magnetic scanning and correction of an ion beam

1. An ion implantation system comprising:

an ion source that generates an ion beam along a beam path;

a mass analysis component downstream of the ion source that performs mass analysis on the ion beam;

a magnetic scanner downstream of the mass analysis component that generates a time varying oscillatory magnetic field across a portion of the beam path;

a constant magnetic field generator proximate to the magnetic scanner that generates a static magnetic field across the beam path to mitigate zero field effects, the constant magnetic field generator comprising:

a set of entrance magnets proximate to an entrance of the magnetic scanner and having a first polarity arrangement; and

a set of exit magnets proximate to an exit of the magnetic scanner and having a second polarity arrangement that is opposite the first polarity arrangement;

a parallelizer downstream of the magnetic scanner that redirects the ion beam parallel to a common axis; and

an end station positioned downstream of the parallelizer component that receives the ion beam;

wherein the static magnetic field generated by the constant magnetic field generator varies in amplitude along the beam path from an entrance of the magnetic scanner to an exit of the magnetic scanner.

2. The system of claim 1 , further comprising cusp field generators along at least a portion of interior surfaces of the magnetic scanner that generate magnetic cusp fields to facilitate electron confinement.

3. The system of claim 1 , further comprising cusp field generators along at least a portion of interior surfaces of the parallelizer that generate magnetic cusp fields to facilitate electron confinement.

4. The system of claim 1 , wherein the constant magnetic field generator comprises a pair of permanent magnets positioned about an entrance of the magnetic scanner.

5. The system of claim 4 , wherein the constant magnetic field generator further comprises a second pair of permanent magnets positioned about an exit of the magnetic scanner.

6. The system of claim 1 , wherein the constant magnetic field generator comprises a pair of permanent magnets positioned about an exit of the magnetic scanner.

7. The system of claim 1 , wherein the constant magnetic field generator comprises a pair of permanent magnets positioned external to the magnetic scanner.

8. The system of claim 1 , wherein the constant magnetic field generator comprises a pair of permanent magnets positioned internal to the magnetic scanner.

9. The system of claim 1 , wherein the constant magnetic field generator comprises a pair of electromagnets positioned about the magnetic scanner.

10. The system of claim 1 , wherein the constant magnetic field generator comprises a pair of permanent magnets comprised of Cobalt-Samarium compounds.

11. The system of claim 1 , further comprising an accel/decel assembly downstream of the parallelizer.

12. A magnetic scanner comprising:

an upper pole piece and a lower pole piece that generate an oscillatory time varying magnetic field across a path of an ion beam and deflect the ion beam in a scan direction;

a set of entrance magnets positioned about an entrance of the scanner that generate a constant entrance magnetic field across the path of the ion beam; and

a set of exit magnets positioned about an exit of the scanner that generate a constant exit magnetic field across the path of the ion beam, wherein the set of entrance magnets and the set of exit magnets comprise separate magnetic field sources;

wherein the set of entrance magnets has a polarity arrangement that is opposite a polarity arrangement of the set of exit magnets.

13. The magnetic scanner of claim 12 , wherein the set of entrance magnets and the set of exit magnets are comprised of permanent magnets.

14. The magnetic scanner of claim 12 , wherein the set of entrance magnets comprise a pair of permanent magnets having south poles oriented toward the lower pole piece and north poles oriented toward the upper pole piece.

15. The magnetic scanner of claim 12 , wherein the set of exit magnets comprise a pair of permanent having south poles oriented toward the lower pole piece and north poles oriented toward the upper pole piece.

16. The magnetic scanner of claim 12 , wherein the oscillatory time varying magnetic field is perpendicular to interior faces of the upper pole piece and the lower pole piece.

17. The magnetic scanner of claim 12 , wherein the upper pole piece and the lower pole piece comprise coils that receive a time varying current that induces the oscillatory time varying magnetic field.

18. The magnetic scanner of claim 17 , further comprising a controllable power supply coupled to the coils of the upper pole piece and the lower pole piece.

19. The magnetic scanner of claim 12 , further comprising cusp magnets positioned along an interior face of the upper pole piece and an interior face of the lower pole piece to facilitate electron confinement.

20. A method of operating an ion implantation system comprising:

generating an ion beam along a beam path;

performing mass analysis on the ion beam;

applying a first constant magnetic field at an entrance of a magnetic scanner, the first magnetic field having a first polarity;

applying a time varying oscillatory magnetic field to the ion beam within the magnetic scanner to scan the ion beam in a scan direction; and

applying a second constant magnetic field at an exit of the magnetic scanner the second magnetic field having a second polarity that is opposite the first polarity;

wherein the first and second constant magnetic fields are substantially parallel to the time varying oscillatory magnetic field.

21. The method of claim 20 , wherein the first constant magnetic field and the second constant magnetic field are oriented to mitigate the zero field effect.

22. The method of claim 20 , further comprising parallelizing the ion beam subsequent to applying the second constant magnetic field.

23. The method of claim 20 , further comprising generating cusp fields about interior surfaces of the magnetic scanner to mitigate migration of electrons from the beam.

24. The method of claim 20 , further comprising receiving the ion beam at an end station.

25. The method of claim 20 , further comprising measuring beam current of the ion beam proximate to a target workpiece.

26. An ion implantation system comprising:

an ion source that generates an ion beam along a beam path;

a mass analysis component downstream of the ion source that performs mass analysis on the ion beam;

a magnetic scanner downstream of the mass analysis component that generates a time varying oscillatory magnetic field across a portion of the beam path;

a constant magnetic field generator that generates a static magnetic field across the beam path to mitigate zero field effects, the constant magnetic field generator comprising:

a set of entrance magnets proximate to an entrance of the magnetic scanner and having a first polarity arrangement; and

a set of exit magnets proximate to an exit of the magnetic scanner and having a second polarity arrangement that is opposite the first polarity arrangement;

a parallelizer downstream of the magnetic scanner that redirects the ion beam parallel to a common axis; and

an end station positioned downstream of the parallelizer component that receives the ion beam;

wherein the static magnetic field generated by the constant magnetic field generator is substantially parallel to the time varying oscillatory magnetic field.

27. The ion implantation system of claim 10 , wherein the parallelizer comprises two dipole magnets which are substantially trapezoidal and which are oriented to mirror one another.