Beam line architecture for ion implanter
View Patent ↗A parallelizing component of an ion implantation system comprises two angled dipole magnets that mirror one another and serve to bend an ion beam traversing therethrough to have a substantially “s” shape. This s bend serves to filter out contaminants of the beam, while the dipoles also parallelize the beam to facilitate uniform implant properties across the wafer, such as implant angle, for example. Additionally, a deceleration stage is included toward the end of the implantation system so that the energy of the beam can be kept relatively high throughout the beamline to mitigate beam blowup.
1. A method of implanting ions into a workpiece in an ion implantation system, comprising:
generating an ion beam in the ion implantation system;
bending the beam to have a substantially s share in the implantation system while concurrently parallelizing the beam into a plurality of parallel beamlets such that the respective beamlets have a substantially equal length;
decelerating the ion beam after it is bent to have a substantially s shape; and
locating the workpiece in front of the beamlets so that ions are implanted into the workpiece.
2. The method of claim 1 , further comprising:
measuring one or more implant characteristics; and
adjusting the bend and/or deceleration of the ion beam in response to the measured characteristics.
3. The method of claim 2 , where the beam is bent through a first angle and then through an equal but opposite second angle to achieve the substantially s shape.
4. The method of claim 3 , where each of the first and second angles are greater than about 20 degrees.
5. The method of claim 4 , where the ion beam comprises molecular ions.
6. A method of implanting ions into a workpiece in an ion implantation system, comprising:
generating an ion beam in the ion implantation system;
bending the beam to have a substantially s share in the implantation system while concurrently parallelizing the beam into a plurality of parallel beamlets such that the respective beamlets have a substantially equal length;
locating the workpiece in front of the beamlets so that ions are implanted into the workpiece;
measuring one or more implant characteristics; and adjusting the bend of the ion beam in response to the measured characteristics.
7. The method of claim 6 , where the beam is bent through a first angle of greater than about 20 degrees and then through an equal but opposite second angle of greater than about 20 degrees to achieve the substantially s shape.
8. An ion implantation system, comprising:
a component for generating an ion beam;
a component for mass resolving the ion beam;
a parallelizer component downstream of the mass resolving component for bending the beam into a substantially s share to filter out contaminants while concurrently parallelizing the beam into a plurality of parallel beamlets such that the respective beamlets have a substantially equal length, wherein the parallelizer component comprises at least one pair of dipole magnets; and
an endstation located downstream of the parallelizing component and configured to support a workpiece that is to be implanted with ions by the ion beam.
9. The system of claim 8 , where the respective dipole magnets are substantially trapezoidal in shape.
10. The system of claim 9 , where the respective dipole magnets are oriented to mirror one another.
11. The system of claim 10 , where the respective dipole magnets bend the beam greater than about 20 degrees.
12. The system of claim 11 , where at least one of the dipole magnets comprises cusping magnets.
13. The system of claim 10 , where the ion beam comprises molecular ions.
14. An ion implantation system, comprising:
a component for generating an ion beam;
a component for mass resolving the ion beam;
a parallelizer component downstream of the mass resolving component for bending the beam into a substantially s share to filter out contaminants while concurrently parallelizing the beam into a plurality of parallel beamlets such that the respective beamlets have a substantially equal length;
a measurement component configured to measure one or more implant characteristics of the bent ion beam;
a controller operatively coupled to the measurement component, beam generating component, mass resolving component, parallelizer component, and end station, and configured to adjust the operation of at least one of the beam generating component, mass resolving component, parallelizer component, and end station in response to measured ion beam implant characteristics taken by the measurement component; and
an endstation located downstream of the parallelizing component and configured to support a workpiece that is to be implanted with ions by the ion beam.
15. The system of claim 12 , further comprising:
a measurement component configured to measure one or more implant characteristics; and
a controller operatively coupled to the measurement component, beam generating component, mass resolving component, parallelizer component, and end station, and configured to adjust the operation of at least one of the beam generating component, mass resolving component, parallelizer component, and end station in response to measurements taken by the measurement component.
16. An ion implantation system, comprising:
a component for generating an ion beam;
a component for mass resolving the ion beam;
a parallelizer component downstream of the mass resolving component for bending the beam into a substantially s share to filter out contaminants while concurrently parallelizing the beam into a plurality of parallel beamlets such that the respective beamlets have a substantially equal length;
an endstation located downstream of the parallelizing component and configured to support a workpiece that is to be implanted with ions by the ion beam; and
a deceleration component situated downstream of the parallelizer component but before the end station, and configured to decelerate the ion beam before ions are implanted into the workpiece.
17. An ion implantation system, comprising:
a component for generating a pencil type ion beam;
a component for mass resolving the ion beam;
a parallelizer component downstream of the mass resolving component for bending the beam into a substantially s share to filter out contaminants while concurrently parallelizing the beam into a plurality of parallel beamlets such that the respective beamlets have a substantially equal length;
a scanning component downstream of the mass resolving component but before the parallelizer component, and configured to scan the pencil type beam into a ribbon beam; and
a focusing and steering component downstream of the mass resolving component but before the scanning component, and configured to focus and steer the beam to the scan vertex of the scanning component; and
an endstation located downstream of the parallelizing component and configured to support a workpiece that is to be implanted with ions by the ion beam.
18. The system of claim 17 , where the controller is further operatively coupled to the scanning component and the focusing and steering component and configured to adjust the operation of at least one of the scanning component and the focusing and steering component in response to measurements taken by the measurement component.