Methods for rapidly switching off an ion beam
View Patent ↗An ion beam is rapidly switched off during ion implantation on detecting a beam instability. The ion beam is generated or provided by a non-arc discharge based ion source, such as an electron gun ion source or an RF ion source. The ion beam is scanned across a workpiece from a starting location toward an ending location. During the scanning, one or more beam characteristics are monitored, such as beam current, beam flux, shape, and the like. An instability is detected when one or more of the beam characteristics deviate from acceptable values or levels. The ion beam is rapidly turned off on the detected instability.
1. A method of implanting ions, the method comprising:
providing an ion beam by a non-arc discharge ion source;
scanning the ion beam across a workpiece;
measuring one or more characteristics of the ion beam, wherein measuring the one or more characteristics includes measuring a shape of the ion beam;
detecting an instability from the one or more measured characteristics; and
rapidly switching off the ion beam after detecting the instability.
2. The method of claim 1 , wherein rapidly switching off the ion beam comprises turning off a non-arc discharge ion source.
3. The method of claim 1 , wherein rapidly switching off the ion beam comprises preventing implantation at a current target location of the workpiece.
4. The method of claim 3 , further comprising recording the current target location.
5. The method of claim 1 , wherein measuring the one or more characteristics further comprises measuring beam current.
6. The method of claim 1 , wherein measuring the one or more characteristics further comprises measuring flux.
7. The method of claim 1 , wherein measuring the one or more characteristics further comprises employing a return current monitor.
8. The method of claim 1 , wherein scanning the ion beam across the workpiece includes initiating scanning at a starting location and continuing toward an ending location.
9. A method of implanting ions, the method comprising:
providing an ion beam by a non-arc discharge ion source;
scanning the ion beam across a workpiece along a scan path in a first direction from a starting location to an ending location;
measuring one or more characteristics of the ion beam, wherein measuring the one or more characteristics includes measuring a share of the ion beam;
detecting an instability of the ion beam from the one or more measured characteristics;
rapidly switching off the ion beam at a beam-off position on the workpiece after detecting the instability; and
repainting an unscanned portion of the workpiece along the scan path, wherein repainting comprises stabilizing the ion beam clear of the workpiece and rescanning the ion beam across the workpiece starting at the ending location and moving toward the beam-off position on the workpiece along the scan path in a second direction, wherein the second direction is opposite of the first direction.
10. The method of claim 1 , wherein providing the ion beam comprises supplying power to an RF ion source.
11. The method of claim 10 , wherein rapidly switching off the ion beam comprises switching off power to the RF ion source.
12. The method of claim 1 , wherein scanning the ion beam across the workpiece comprises moving the workpiece relative to the ion beam, wherein the ion beam is stationary.
13. A method of implanting ions, the method comprising:
generating an electron beam toward an ionization chamber comprising deflecting the electron beam toward the ionization chamber by a magnet;
providing a source material into the ionization chamber;
generating an ion beam from an interaction between the electron beam and the source material;
scanning the ion beam across a workpiece from a starting position toward an ending position;
measuring beam current of the ion beam; and
on detecting an instability, rapidly switching off the ion beam at a current position of the workpiece.
14. The method of claim 13 , wherein rapidly switching off the ion beam comprises redirecting the electron beam away from the ionization chamber by the magnet.
15. A method of implanting ions, the method comprising:
generating an electron beam toward an ionization chamber;
providing a source material into the ionization chamber;
generating an ion beam from an interaction between the electron beam and the source material;
scanning the ion beam across a workpiece from a starting position toward an ending position;
measuring beam current of the ion beam and measuring beam shape of the ion beam for identifying instabilities; and
on detecting an instability, rapidly switching off the ion beam at a current position of the workpiece.
16. The method of claim 13 , wherein providing the source material comprises providing a vapor or gas.
17. A method of implanting ions, the method comprising:
generating an ion beam with an RF ion source;
scanning the ion beam across a workpiece from a starting position toward an ending position;
measuring beam current and ion beam shape during scanning of the ion beam and evaluating the measured beam current and ion beam shape for purposes of detecting an instability of the ion beam based thereon; and
on detecting an instability, rapidly switching off the ion beam at a current position of the workpiece.
18. The method of claim 17 , further comprising switching off power to an antenna within a plasma chamber of the RF ion source to halt ionization and generation of the ion beam.
19. The method of claim 17 , further comprising stabilizing the beam and re-scanning the workpiece from the end position toward the current position after rapidly switching off the ion beam.