Scanning systems and methods for providing ions from an ion beam to a workpiece

1. An ion implantation system, comprising:

an ion source operable to produce an ion beam;

a beam scanner adapted to scan the ion beam substantially in a single beam scan plane to provide a scanned ion beam to a workpiece location in a process chamber; and

a workpiece scanning system located downstream of the beam scanner, the workpiece scanning system being adapted to rotate at least one workpiece at the workpiece location in the process chamber about a first axis that is at a non-zero first angle relative to the beam scan plane, and to translate the at least one workpiece in a workpiece scan direction that is at a non-zero second angle relative to the beam scan plane.

2. The ion implantation system of claim 1 , wherein rotation of the workpiece about the first axis is synchronized with the scanning of the ion beam to provide the scanned ion beam to the at least one workpiece at a substantially constant angle of incidence.

3. The ion implantation system of claim 1 , wherein the first axis is substantially orthogonal relative to the beam scan plane.

4. The ion implantation system of claim 3 , wherein the workpiece scan direction is substantially orthogonal relative to the beam scan plane.

5. The ion implantation system of claim 4 , wherein rotation of the workpiece about the first axis is synchronized with the scanning of the ion beam to provide the scanned ion beam to the at least one workpiece at a substantially constant angle of incidence.

6. The ion implantation system of claim 1 , wherein the first angle between the first axis and the beam scan plane is variable.

7. The ion implantation system of claim 6 , wherein the workpiece scan direction is substantially orthogonal relative to the beam scan plane.

8. The ion implantation system of claim 7 , wherein rotation of the workpiece about the first axis is synchronized with the scanning of the ion beam to provide the scanned ion beam to the at least one workpiece at a substantially constant angle of incidence.

9. The ion implantation system of claim 6 , wherein the workpiece scan direction is substantially parallel to the first axis.

10. The ion implantation system of claim 9 , wherein rotation of the workpiece about the first axis is synchronized with the scanning of the ion beam to provide the scanned ion beam to the at least one workpiece at a substantially constant angle of incidence.

11. The ion implantation system of claim 6 , wherein the workpiece scanning system is further adapted to rotate at least one workpiece at the workpiece location in the process chamber about a second axis that is in the beam scan plane so as to tilt the workpiece for angled implants.

12. A scanning system for providing ions from an ion beam to a workpiece, the scanning system comprising:

a beam scanner receiving an ion beam and scanning the ion beam substantially in a single beam scan plane to provide a scanned ion beam to a workpiece location in a process chamber; and

a workpiece scanning system located downstream of the beam scanner, the workpiece scanning system being adapted to rotate at least one workpiece at the workpiece location in the process chamber about a first axis that is at a non-zero first angle relative to the beam scan plane, and to translate the at least one workpiece in a workpiece scan direction that is at a non-zero second angle relative to the beam scan plane.

13. The scanning system of claim 12 , wherein rotation of the workpiece about the first axis is synchronized with the scanning of the ion beam to provide the scanned ion beam to the at least one workpiece at a substantially constant angle of incidence.

14. The scanning system of claim 12 , wherein the first axis is substantially orthogonal relative to the beam scan plane.

15. The scanning system of claim 14 , wherein the workpiece scan direction is substantially orthogonal relative to the beam scan plane.

16. The scanning system of claim 12 , wherein the first angle between the first axis and the beam scan plane is variable.

17. The scanning system of claim 16 , wherein the workpiece scan direction is substantially orthogonal relative to the beam scan plane.

18. The scanning system of claim 16 , wherein the workpiece scan direction is substantially parallel to the first axis.

19. A method of implanting a workpiece with ions from an ion beam, the method comprising:

providing an ion beam;

supporting a workpiece at a workpiece location in a process chamber;

scanning the ion beam substantially in a single beam scan plane to provide a scanned ion beam to the workpiece location;

rotating the workpiece about a first axis that is at a non-zero first angle relative to the beam scan plane; and

translating the workpiece in a workpiece scan direction that is at a non-zero second angle relative to the beam scan plane.

20. The method of claim 19 , further comprising synchronizing rotating the workpiece about the first axis and scanning the ion beam to provide the scanned ion beam to the at least one workpiece at a substantially constant angle of incidence.

21. The method of claim 19 , wherein the first axis is substantially orthogonal relative to the beam scan plane.

22. The method of claim 21 , wherein the workpiece scan direction is substantially orthogonal relative to the beam scan plane.

23. The method of claim 19 , further comprising adding an offset to the rotation of the workpiece to provide an angled implant.

24. The method of claim 19 , further comprising setting the first angle between the first axis and the beam scan plane to an oblique angle to provide an angled implant.

25. The method of claim 24 , wherein the workpiece scan direction is substantially orthogonal relative to the beam scan plane.

26. The method of claim 24 , wherein the workpiece scan direction is substantially parallel to the first axis.